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    Josephson device
    1.
    发明公开
    Josephson device 失效
    约瑟夫森-Anordnung

    公开(公告)号：EP0756335A1

    公开(公告)日：1997-01-29

    申请号：EP96305357.4

    申请日：1996-07-22

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Konishi, Masaya ,  Matsunaga, Yoshinori ,  Enomoto, Youichi ,  Tanaka, Shoji

    IPC分类号： H01L39/22

    CPC分类号： H01L39/225

    摘要： A crystal grain boundary is produced by growing a single crystal YBa 2 Cu 3 O 7-x thin film (2) having a c-axis parallel to the surface on a single crystal YBa 2 Cu 3 O 7-x (001) substrate (1) having a c-axis vertical to the surface by a magnetron sputtering method at a substrate temperature between 500°C and 680°C. The difference of the orientations makes a grain boundary at the interface without interposition of any other material than YBa 2 Cu 3 O 7-x . The grain boundary is utilized as a Josephson junction.

    摘要翻译： 通过在具有垂直于c轴的单轴YBa2Cu3O7-x（001）衬底（1）上生长具有平行于表面的c轴的单晶YBa2Cu3O7-x薄膜（2）来产生晶界边界。 通过磁控溅射法在基板温度在500℃至680℃之间的表面。取向的差异使得界面处的晶界没有插入比YBa2Cu3O7-x的任何其它材料。 晶界用作约瑟夫逊结。