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公开(公告)号：EP0068077A1
公开(公告)日：1983-01-05
申请号：EP82102404.9
申请日：1982-03-23
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32135 , C23F1/12 , H01L21/3065 , H01L21/32136 , H01L21/32137
摘要： A substrate (e.g. of silicon) which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF 3 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.
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2.发明授权A method of plasma etching silica at a faster rate than silicon in an article comprising both 失效等离子体蚀刻二氧化硅的方法比包含两层的文章中的硅更快
公开(公告)号：EP0004285B1
公开(公告)日：1982-08-11
申请号：EP79100510.1
申请日：1979-02-21
IPC分类号： H01L21/31 , H01L21/306 , C23C15/00
CPC分类号： H01L21/3065 , H01L21/31116
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公开(公告)号：EP0002889A3
公开(公告)日：1979-07-25
申请号：EP78300702
申请日：1978-12-01
发明人： Coburn, John Wyllie , Kay, Eric
CPC分类号： B05D1/62 , Y10T428/31544
摘要： A method of forming a polymer film containing metal therein includes the steps of providing an electrode of a metal that can be etched by a halogen, providing a substrate for the polymer film to be deposited thereon, and passing a halocarbon monomer through a plasma system so that the metal etched from the electrode forms a volatile halide and is incorporated in the polymer film that is deposited on the substrate.
摘要翻译： 形成含有金属的聚合物膜的方法包括以下步骤：提供可被卤素蚀刻的金属电极，提供用于沉积在其上的聚合物膜的基底，并使卤代烃单体通过等离子体系统 从电极蚀刻的金属形成挥发性卤化物，并且被结合到沉积在基板上的聚合物膜中。
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公开(公告)号：EP0002889A2
公开(公告)日：1979-07-11
申请号：EP78300702.4
申请日：1978-12-01
发明人： Coburn, John Wyllie , Kay, Eric
CPC分类号： B05D1/62 , Y10T428/31544
摘要： A method of forming a polymer film containing metal therein includes the steps of providing an electrode of a metal that can be etched by a halogen, providing a substrate for the polymer film to be deposited thereon, and passing a halocarbon monomer through a plasma system so that the metal etched from the electrode forms a volatile halide and is incorporated in the polymer film that is deposited on the substrate.
摘要翻译： 形成含有金属的聚合物膜的方法包括以下步骤：提供可被卤素蚀刻的金属电极，提供用于沉积在其上的聚合物膜的基底，并使卤代烃单体通过等离子体系统 从电极蚀刻的金属形成挥发性卤化物，并且被结合到沉积在基板上的聚合物膜中。
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公开(公告)号：EP0068077B1
公开(公告)日：1985-02-06
申请号：EP82102404.9
申请日：1982-03-23
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32135 , C23F1/12 , H01L21/3065 , H01L21/32136 , H01L21/32137
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公开(公告)号：EP0002889B1
公开(公告)日：1981-08-05
申请号：EP78300702.4
申请日：1978-12-01
发明人： Coburn, John Wyllie , Kay, Eric
CPC分类号： B05D1/62 , Y10T428/31544
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7.发明公开A method of plasma etching silica at a faster rate than silicon in an article comprising both 失效在比用于在受试者中两个含硅材料更大的速度等离子体蚀刻二氧化硅的方法。
公开(公告)号：EP0004285A1
公开(公告)日：1979-10-03
申请号：EP79100510.1
申请日：1979-02-21
IPC分类号： H01L21/31 , H01L21/306 , C23C15/00
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of plasma etching silica at a faster rate than silicon in an article containing both silica and silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbons contain fluorine. A preferred embodiment is a gaseous mixture containing C 3 F 6 and C 2 F 6 .
摘要翻译： 以更快的速度比在硅上的文章含有二氧化硅和硅等离子体蚀刻二氧化硅的方法涉及使用包含不饱和羧酸和卤代的饱和羧酸卤素的气体混合物。 优选的卤代碳含有氟。 一个优选的实施方案是含有C3F6和C2F6的气体混合物。
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