公开(公告)号：EP2693496A4

公开(公告)日：2014-08-27

申请号：EP13761496

申请日：2013-03-06

申请人： KOREA ENERGY RESEARCH INST

发明人： EO YOUNG-JOO ,  YOON KYUNG-HOON ,  AHN SEJIN ,  GWAK JIHYE ,  YUN JAE-HO ,  CHO ARA ,  SHIN KEE-SHIK ,  AHN SEOUNGKYU ,  CHO JUN-SIK ,  YOO JIN-SU ,  PARK SANG-HYUN ,  PARK JOO-HYUNG

IPC分类号： H01L31/18 ,  H01L31/042 ,  H01L31/0749

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

公开(公告)号：EP2811538A4

公开(公告)日：2015-11-11

申请号：EP13743766

申请日：2013-01-31

申请人： KOREA ENERGY RESEARCH INST

发明人： EO YOUNG-JOO ,  YOON KYUNG-HOON ,  AHN SEJIN ,  GWAK JIHYE ,  YUN JAE-HO ,  CHO ARA ,  SHIN KEE-SHIK ,  AHN SEOUNGKYU ,  CHO JUN-SIK ,  YOO JIN-SU ,  PARK SANG-HYUN ,  PARK JOO-HYUNG

IPC分类号： H01L31/042 ,  H01L31/032 ,  H01L31/18

CPC分类号： H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for fabricating a CI(G)S-based thin film using a flux having a low-melting temperature and a CI(G)S-based thin film fabricated thereby. The method comprises the steps of: (a) preparing CI(G)S-based nanoparticles; (b) preparing a slurry including the CI(G)S-based nanoparticles and a flux having a melting point of 30 to 400 °C; (c) coating the slurry on a substrate in a non-vacuum to form a CI(G)S-based precursor thin film; (d) drying the CI(G)S-based precursor thin film; and (e) performing selenization heat treatment of the CI(G)S-based precursor thin film using selenium (Se) vapor. According to the method, selenization heat treatment is performed at a lower temperature than that in a process of forming a CI(G)S-based thin film according to the prior art, and thus the fabrication cost can be reduced, while the growth of crystals in the thin film can be sufficiently enabled even at a low temperature.