公开(公告)号：EP2693496A4

公开(公告)日：2014-08-27

申请号：EP13761496

申请日：2013-03-06

申请人： KOREA ENERGY RESEARCH INST

发明人： EO YOUNG-JOO ,  YOON KYUNG-HOON ,  AHN SEJIN ,  GWAK JIHYE ,  YUN JAE-HO ,  CHO ARA ,  SHIN KEE-SHIK ,  AHN SEOUNGKYU ,  CHO JUN-SIK ,  YOO JIN-SU ,  PARK SANG-HYUN ,  PARK JOO-HYUNG

IPC分类号： H01L31/18 ,  H01L31/042 ,  H01L31/0749

CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

公开(公告)号：EP2811538A4

公开(公告)日：2015-11-11

申请号：EP13743766

申请日：2013-01-31

申请人： KOREA ENERGY RESEARCH INST

发明人： EO YOUNG-JOO ,  YOON KYUNG-HOON ,  AHN SEJIN ,  GWAK JIHYE ,  YUN JAE-HO ,  CHO ARA ,  SHIN KEE-SHIK ,  AHN SEOUNGKYU ,  CHO JUN-SIK ,  YOO JIN-SU ,  PARK SANG-HYUN ,  PARK JOO-HYUNG

IPC分类号： H01L31/042 ,  H01L31/032 ,  H01L31/18

CPC分类号： H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for fabricating a CI(G)S-based thin film using a flux having a low-melting temperature and a CI(G)S-based thin film fabricated thereby. The method comprises the steps of: (a) preparing CI(G)S-based nanoparticles; (b) preparing a slurry including the CI(G)S-based nanoparticles and a flux having a melting point of 30 to 400 °C; (c) coating the slurry on a substrate in a non-vacuum to form a CI(G)S-based precursor thin film; (d) drying the CI(G)S-based precursor thin film; and (e) performing selenization heat treatment of the CI(G)S-based precursor thin film using selenium (Se) vapor. According to the method, selenization heat treatment is performed at a lower temperature than that in a process of forming a CI(G)S-based thin film according to the prior art, and thus the fabrication cost can be reduced, while the growth of crystals in the thin film can be sufficiently enabled even at a low temperature.

公开(公告)号：EP2784829A4

公开(公告)日：2015-08-26

申请号：EP12852335

申请日：2012-10-15

申请人： KOREA ENERGY RESEARCH INST

发明人： EO YOUNG-JOO ,  YOON KYUNG-HOON ,  GWAK JIHYE ,  YUN JAE-HO ,  AHN SEJIN ,  CHO ARA ,  SHIN KEE-SHIK ,  AHN SEOUNGKYU

IPC分类号： H01L31/18 ,  B23K26/36 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/0749

CPC分类号： H01L31/0749 ,  H01L31/02 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0322 ,  Y02E10/541

摘要： Disclosed herein are a CIS/CIGS solar cell and a method of manufacturing the same. The CIS/CIGS solar cell includes: a substrate; first and second molybdenum electrodes disposed on the substrate at a predetermined interval in parallel with each other; a TCO layer disposed on upper and lateral sides of the second molybdenum electrode; a buffer layer disposed on upper and lateral sides of the TCO layer to compensate for a difference in bandgap between the TCO layer and a light-absorbing layer; the light-absorbing layer disposed on the first molybdenum electrode, the buffer layer and an area of the substrate partially opened between the first molybdenum electrode and the buffer layer; and an antireflection layer disposed on the light-absorbing layer to minimize the reflection of externally-applied light. According to the CIS/CIGS solar cell, a buffer layer and a TCO layer are disposed at the rear side of a light-absorbing layer to prevent the amount of light incident upon the light-absorbing layer from being reduced by removing the incident light obstruction structure disposed on the light-absorbing layer, so the amount of light incident upon the light-absorbing layer can be maximized, thereby increasing the energy conversion efficiency of the solar cell.