公开(公告)号：EP3274421A1

公开(公告)日：2018-01-31

申请号：EP16713389.1

申请日：2016-03-25

Applicant: Nexdot

Inventor： HEUCLIN, Hadrien ,  NADAL, Brice ,  GRAZON, Chloé ,  MAHLER, Benoît ,  LHUILLIER, Emmanuel

IPC: C09K11/56 ,  C09K11/88 ,  C09K11/02

CPC classification number: G02F1/133603 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  G02F1/133606 ,  G02F2001/133614 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02565 ,  H01L21/02601 ,  H01L21/02628

Abstract: The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.

公开(公告)号：EP3262675A1

公开(公告)日：2018-01-03

申请号：EP16723636.3

申请日：2016-02-26

Applicant: Dynamic Solar Systems AG

Inventor： LINDER, Patrick ,  LINDER, Daniel

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L31/046 ,  H01G9/2004 ,  H01G9/2095 ,  H01L21/02422 ,  H01L21/02601 ,  H01L21/02628

Abstract: Methods according to the prior art always require a sintering step at an increased temperature, and this is considered problematic. It is additionally problematic that flexible thin layers, particularly PV layers, are frequently unable to withstand such temperatures and moreover do not allow exploitation of industrial waste heat and/or long-wave photons. This problem can be solved using a method in which, during the curing process, an additional reaction accelerates and improves curing. In a particularly advantageous embodiment, a double layer sequence having a plastic matrix in which continuous metal particles and, in the upper layer, alkaline-solubilised siloxane portions and metal particles are provided, allows, by means of combined definitive curing during the alkaline-solubilisation, the production of a PV layer sequence with which industrial waste heat/ long-wave IR radiation can be utilised photovoltaically. The active exploitation of industrial waste heat/ heat/ body heat offers clear, financially-viable advantages in a great number of fields.

公开(公告)号：EP3258510A1

公开(公告)日：2017-12-20

申请号：EP17175157.1

申请日：2017-06-09

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives

Inventor： RAMOS, Raphaël ,  DIJON, Jean

IPC: H01L51/00

CPC classification number: H01L21/265 ,  H01J2893/0022 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02606 ,  H01L51/002 ,  H01L51/0048

Abstract: L'invention concerne un procédé de fabrication d'un contact électrique sur une structure (10) faite d'un matériau anisotrope NA présentant une conductivité anisotrope, la structure (10) présentant une conductivité axiale selon un premier axe XX' de la structure (10), et une conductivité orthogonale selon une direction orthogonale YY' au premier axe XX' de la structure (10), la conductivité orthogonale étant inférieure à la conductivité axiale, le procédé comprenant :
- une étape de formation d'une électrode conductrice (20), d'une épaisseur initiale Ei, comprenant une espèce M, sur une première surface (30) de la structure (10), la première surface (30) étant orthogonale à la direction orthogonale YY' ;
le procédé étant caractérisé en ce que l'étape de formation de l'électrode conductrice (20) est suivie d'une étape d'implantation d'espèces X, au travers de l'électrode conductrice (20), dans la structure (10).

Abstract translation: 本发明涉及一种制造具有各向异性导电性上的结构由NA各向异性材料的电接触（10）的方法，具有沿所述结构的第一轴线XX”的轴向导电性的结构（10）（ 10），以及在正交的方向Y-Y“于第一轴线XX”的结构（10），正交导率小于所述轴向导电性的正交性，该方法包括： - 导电电极形成工序（ 20），初始厚度E，包括在所述结构（10）的第一表面（30），一个物种男，中，第一表面（30）垂直于所述正交方向YY“; 该方法的特征在于，所述导电电极形成工序（20）之后通过注入物种X，通过该结构中的导电电极（20）的步骤（10 ）。

公开(公告)号：EP3141523A1

公开(公告)日：2017-03-15

申请号：EP16188135.4

申请日：2016-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： OH, Yeongtek ,  KWON, Hyeokshin ,  SUH, Hwansoo ,  JEON, Insu

IPC: B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78 ,  H01L29/861

Abstract: Provided are methods of forming nanostructures, methods of manufacturing semiconductor devices using the same, and semiconductor devices including nanostructures. A method of forming at least one nanostructure may include forming an insulating layer (N11) and forming at least one nanostructure (NW11) on the insulating layer. The insulating layer (N11) has a crystal structure and is a two-dimensional (2D) material, like hexagonal boron nitride (h-BN). The insulating layer may be formed on a catalyst metal layer (M11). The nanostructures may include at least one of silicon (Si), germanium (Ge), and SiGe. The nanostructure may include at least one nanowire and may be formed directly on the 2D insulating layer by evaporation. Devices may be formed that comprise a plurality of nanowires (NW11) in a network structure.

Abstract translation: 本发明提供纳米结构形成，使用相同的制造半导体器件的方法，以及包括纳米结构的半导体器件的方法。 形成至少一个纳米结构的方法可包括：形成在绝缘层（N11），并形成在绝缘层上的至少一个纳米结构（NW11）。 绝缘层（N11）具有的晶体结构，并且是二维（2D）材料，如六方氮化硼（h-BN）。 所述绝缘层可以由催化剂金属层（M11）上形成。 纳米结构可包括硅中的至少一种（Si），锗（Ge）和硅锗。 纳米结构可包括至少一个纳米线，并且可以通过蒸发将2D绝缘层上直接形成。 设备可以形成没有包括在网络结构的纳米线（NW11）的复数。

公开(公告)号：EP2939766A4

公开(公告)日：2017-01-04

申请号：EP14746525

申请日：2014-01-22

Applicant: LG CHEMICAL LTD

Inventor： PARK EUNJU ,  YOON SEOKHEE ,  YOON SEOKHYUN ,  YOON TAEHUN ,  LEE HOSUB

IPC: H01L21/368 ,  B22F9/24 ,  B82B3/00 ,  H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0326 ,  B22F1/0018 ,  B22F9/24 ,  C08K3/08 ,  C08K2003/085 ,  C08K2003/0893 ,  C09D11/00 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

Abstract: Disclosed are a method of preparing metal nanoparticles for solar cells, an ink composition including the metal nanoparticles, and a method of preparing a thin film using the same. More particularly, there are provided a method of preparing metal nanoparticles for forming a light absorption layer of a solar cell, including preparing a first solution including a reducing agent, preparing a second solution including at least two salts selected from the group consisting of a copper (Cu) salt, a zinc (Zn) salt, and a tin (Sn) salt, preparing a mixture by mixing the first solution and the second solution, and synthesizing at least one kind of metal nanoparticles by reaction of the mixture and purifying the synthesized metal nanoparticles, an ink composition including the metal nanoparticles, and a method of preparing a thin film using the same.

公开(公告)号：EP2817091B1

公开(公告)日：2016-11-30

申请号：EP13705901.0

申请日：2013-02-15

Applicant: nanograde AG

Inventor： LÜCHINGER, Norman, Albert ,  HALIM, Samuel, Claude

IPC: B01J23/30 ,  B01J23/652 ,  B01J23/68 ,  B01J23/888 ,  B01J37/02 ,  C03C17/25 ,  C09C1/00 ,  C09D7/12 ,  H01L51/42 ,  H01L51/52

CPC classification number: C09D5/24 ,  B82Y30/00 ,  C01G41/02 ,  C01P2004/64 ,  C03C17/007 ,  C03C2217/219 ,  C03C2217/42 ,  C08K3/22 ,  C08K2003/2258 ,  C09D1/00 ,  C09D7/20 ,  C09D11/00 ,  H01B1/22 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  H01L51/00 ,  H01L51/42 ,  H01L51/4213 ,  H01L51/5068 ,  H01L51/5088 ,  H01L2251/303 ,  H01L2251/5369 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T428/256

Abstract: The present invention relates to the field of organic electronics, such as OLEDs, OPVs and organic photodetectors. It particularly provides intermediates and materials suitable for manufacturing such organic electronics, to specific manufacturing methods and to specific uses.

公开(公告)号：EP2309555B1

公开(公告)日：2016-11-23

申请号：EP10186412.2

申请日：2010-10-04

Applicant: Fujifilm Corporation

Inventor： Kawano, Tetsuo

IPC: H01L31/18 ,  C23C18/12 ,  H01L31/0749

CPC classification number: C23C18/1204 ,  C23C18/1208 ,  C23C18/1245 ,  C23C18/1266 ,  C23C18/127 ,  C25D11/04 ,  C25D11/08 ,  C25D11/10 ,  H01L21/02422 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1836 ,  Y02E10/541 ,  Y02P70/521

公开(公告)号：EP3072944A2

公开(公告)日：2016-09-28

申请号：EP15177407.2

申请日：2015-07-17

Applicant: Nexdot

Inventor： HEUCLIN, Hadrien ,  NADAL, Brice ,  GRAZON, Chloé ,  MAHLER, Benoît ,  LHUILLIER, Emmanuel

IPC: C09K11/56 ,  C09K11/88 ,  C09K11/02

CPC classification number: G02F1/133603 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  G02F1/133606 ,  G02F2001/133614 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02565 ,  H01L21/02601 ,  H01L21/02628

Abstract: The present invention relates to a population of semiconductor nanoplatelets, each member of the population comprising a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100 °C or above that is at least 80% of the fluorescence quantum efficiency of the population at 20°C. The present invention also relates to a nanoplatelets film comprising said population of nanoplatelets, a backlight unit comprising said nanoplatelets film and a liquid crystal display comprising said backlight unit.

Abstract translation: 本发明涉及半导体纳米片的群体，该群体的每个成员包括纳米血小板芯，其包括第一半导体材料和在纳米血小板核心的表面上包含第二半导体材料的外壳，其中所述群体在100 ℃以上，其在20℃下的群体的荧光量子效率的至少80％。 本发明还涉及包含所述纳米血小板群的纳米片片膜，包含所述纳米片片的背光单元和包括所述背光单元的液晶显示器。

公开(公告)号：EP3044287A1

公开(公告)日：2016-07-20

申请号：EP14767069.9

申请日：2014-09-11

Applicant: Nanoco Technologies Ltd

Inventor： PICKETT, Nigel ,  DANIELS, Steven Matthew ,  MASALA, Ombretta ,  GRESTY, Nathalie

IPC: C09K11/54 ,  C01G9/02

CPC classification number: H01L21/02565 ,  C01G9/02 ,  C01G11/00 ,  C01G13/02 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/64 ,  C09K11/54 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/26

Abstract: A method of preparing metal oxide nanoparticles is described herein. The method involves reacting nanoparticle precursors in the presence of a population of molecular cluster compounds. The molecular cluster compound may or may not contain the same metal as will be present in the metal oxide nanoparticle. Likewise, the molecular cluster compound may or may not contain oxygen. The molecular cluster compounds acts a seeds or templates upon which nanoparticle growth is initiated. As the molecular cluster compounds are all identical, the identical nucleation sites result in highly monodisperse populations of metal oxide nanoparticles.

Abstract translation: 本文描述了制备金属氧化物纳米颗粒的方法。 该方法包括在存在分子簇化合物的群体的情况下使纳米颗粒前体反应。 分子簇化合物可以含有也可以不含有与金属氧化物纳米粒子中存在的金属相同的金属。 同样，分子簇化合物也可以含有或不含氧。 分子簇化合物起作用的纳米颗粒生长的种子或模板。 由于分子簇化合物都是相同的，因此相同的成核位点导致高度单分散的金属氧化物纳米颗粒。

公开(公告)号：EP2519977A4

公开(公告)日：2016-05-18

申请号：EP10844273

申请日：2010-12-28

Applicant: NANOSOLAR INC

Inventor： JACKREL DAVID ,  DICKEY KATHERINE ,  WOODRUFF JACOB

IPC: H01L31/032 ,  H01L21/36 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  Y02E10/541 ,  Y02P70/521