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    Magnetic dual element with dual magnetic states and fabricating method thereof
    1.
    发明公开
    Magnetic dual element with dual magnetic states and fabricating method thereof 有权
    具有两个磁性状态的双磁性元件，及其制造方法

    公开(公告)号：EP1109168A2

    公开(公告)日：2001-06-20

    申请号：EP00127093.3

    申请日：2000-12-11

    申请人： MOTOROLA, INC.

    发明人： Chen, Eugene Youjun ,  Slaughter, Jon Michael ,  Durlam, Mark ,  Deherrea, Mark ,  Tehrani, Saied N.

    IPC分类号： G11C11/15

    CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3272

    摘要： An improved and novel magnetic element (10; 10'; 50; 50'; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.

    摘要翻译： 一种改进的和新颖的磁性元件（10; 10“; 50; 50”; 80）包括薄膜层worin位端磁静态消磁场的多元抵消这种结构的全部正耦合以获得一个双磁态 零外场。 另外游离缺失盘是通过提供薄膜层worin薄膜层的比特结束磁静态消磁字段的多元性制造磁性元件（10）的方法，取消该结构的全部正耦合以获得一个双磁态 零外场。