公开(公告)号：EP0239216A2

公开(公告)日：1987-09-30

申请号：EP87301212.4

申请日：1987-02-12

申请人： NORTHERN TELECOM LIMITED

发明人： Scovell, Peter Denis ,  Blomley, Peter Fred ,  Baker, Roger Leslie

IPC分类号： H01L27/08 ,  H01L29/72 ,  H01L21/285

CPC分类号： H01L29/66272 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0804 ,  Y10S148/123 ,  Y10S148/124

摘要： A process for fabricating a CMOS compatible bipolar transistor is described. The transistor, which is of the polysilicon emitter type, is fabricated by forming a p-type layer in a well, providing a polysilicon emitter in contact with the layer, using the emitter as a mask to implant p⁺-type base contact regions, and applying contacts to the device.

摘要翻译： 描述了制造CMOS兼容双极晶体管的工艺。 通过在阱中形成p型层来制造晶体管，该晶体管提供与该层接触的多晶硅发射极，使用发射极作为掩模来注入p +型碱接触 区域，并将联系人应用于设备。

公开(公告)号：EP0239216A3

公开(公告)日：1990-03-14

申请号：EP87301212.4

申请日：1987-02-12

申请人： NORTHERN TELECOM LIMITED

发明人： Scovell, Peter Denis ,  Blomley, Peter Fred ,  Baker, Roger Leslie

IPC分类号： H01L27/08 ,  H01L29/72 ,  H01L21/285

CPC分类号： H01L29/66272 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0804 ,  Y10S148/123 ,  Y10S148/124

摘要： A process for fabricating a CMOS compatible bipolar transistor is described. The transistor, which is of the polysilicon emitter type, is fabricated by forming a p-type layer in a well, providing a polysilicon emitter in contact with the layer, using the emitter as a mask to implant p⁺-type base contact regions, and applying contacts to the device.