-
公开(公告)号：EP0239216A2
公开(公告)日：1987-09-30
申请号：EP87301212.4
申请日：1987-02-12
IPC分类号： H01L27/08 , H01L29/72 , H01L21/285
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L29/0804 , Y10S148/123 , Y10S148/124
摘要： A process for fabricating a CMOS compatible bipolar transistor is described. The transistor, which is of the polysilicon emitter type, is fabricated by forming a p-type layer in a well, providing a polysilicon emitter in contact with the layer, using the emitter as a mask to implant p⁺-type base contact regions, and applying contacts to the device.
摘要翻译： 描述了制造CMOS兼容双极晶体管的工艺。 通过在阱中形成p型层来制造晶体管，该晶体管提供与该层接触的多晶硅发射极，使用发射极作为掩模来注入p +型碱接触 区域，并将联系人应用于设备。
-
公开(公告)号：EP0225069A2
公开(公告)日：1987-06-10
申请号：EP86308640.1
申请日：1986-11-05
IPC分类号： H04M19/08
CPC分类号： H04M19/08
摘要： To provide an adequate dc supply to the electronics of a telephone, when on hook or off hook, there is a transistor (T2) with its emitter-collector path in one line wire, and a storage capacitor (Cpsu) across the input tot he telephone's circuits. This capacitor is charged up and maintains dc supply when the line voltage (at A) falls below a preset level. The base of this transistor is connected via another transistor (T1) to the other line wire. The speech output (V IN ) is connected via an operational amplifier (A) to the base of the second transistor (T2). Hence the dc supply and the speech output are in parallel.
-
-
公开(公告)号：EP0239216A3
公开(公告)日：1990-03-14
申请号：EP87301212.4
申请日：1987-02-12
IPC分类号： H01L27/08 , H01L29/72 , H01L21/285
CPC分类号： H01L29/66272 , H01L21/8249 , H01L27/0623 , H01L29/0804 , Y10S148/123 , Y10S148/124
摘要： A process for fabricating a CMOS compatible bipolar transistor is described. The transistor, which is of the polysilicon emitter type, is fabricated by forming a p-type layer in a well, providing a polysilicon emitter in contact with the layer, using the emitter as a mask to implant p⁺-type base contact regions, and applying contacts to the device.
-
-
-
搜索结果
4 条记录 (耗时 0.01 秒)
