公开(公告)号：EP1806797A4

公开(公告)日：2009-07-22

申请号：EP05781565

申请日：2005-09-05

Applicant: OSAKA TITANIUM TECHNOLOGIES CO

Inventor： NATSUME YOSHITAKE ,  OGASAWARA TADASHI ,  AZUMA KAZUOMI

IPC: H01M4/02 ,  H01M4/04 ,  H01M4/139 ,  H01M4/1391 ,  H01M4/36 ,  H01M4/48 ,  H01M4/485 ,  H01M4/52 ,  H01M4/525 ,  H01M4/64 ,  H01M4/66 ,  H01M10/0525 ,  H01M10/36

CPC classification number: H01M4/0426 ,  H01M4/1391 ,  H01M4/485 ,  H01M4/525 ,  H01M4/661 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027 ,  Y10T29/49115

Abstract: The lowness of the initial efficiency which is a drawback of lithium secondary batteries wherein a SiO negative electrode is used is largely made better without hindering a large initial charge capacity peculiar to the lithium secondary batteries. A fall in the cycle characteristic when the thickness of the SiO layer is made large is prevented. To realize these matters, a thin film of SiO is formed, as a negative electrode active material layer, on the surface of a current collector by vacuum evaporation or sputtering. The film is preferably formed by an ion plating process. The thickness of the SiO thin film is set to 5 µm or more. The surface roughness of the current collector is set to follows: the maximum height roughness Rz = 5.0 or more. After the formation of the thin film, the film is thermally treated in a nonoxidative atmosphere.

Abstract translation: 作为使用了SiO负极的锂二次电池的缺点的初始效率的低度大大地变得更好，而不会妨碍锂二次电池特有的大的初始充电能力。 防止了当SiO层的厚度变大时的循环特性的下降。 为了实现这些事宜，通过真空蒸发或溅射在集电体的表面上形成SiO的薄膜作为负极活性物质层。 该膜优选通过离子镀工艺形成。 将SiO薄膜的厚度设定为5μm以上。 集电体的表面粗糙度设定为：最大高度粗糙度Rz = 5.0以上。 在形成薄膜之后，在非氧化气氛中对膜进行热处理。

公开(公告)号：EP1892313A4

公开(公告)日：2010-01-27

申请号：EP06747170

申请日：2006-06-05

Applicant: OSAKA TITANIUM TECHNOLOGIES CO

Inventor： NATSUME YOSHITAKE

IPC: C23C14/24 ,  G02F1/1333 ,  G09F9/30

CPC classification number: C23C14/10 ,  C01B33/113 ,  C04B35/14 ,  C04B2235/428 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2235/80 ,  C04B2235/96 ,  C23C14/24

公开(公告)号：EP1622215A4

公开(公告)日：2009-07-22

申请号：EP04728063

申请日：2004-04-16

Applicant: OSAKA TITANIUM TECHNOLOGIES CO

Inventor： NATSUME YOSHITAKE ,  OGASAWARA TADASHI ,  AZUMA KAZUOMI

IPC: H01M4/131 ,  H01M4/1391 ,  H01M4/48 ,  H01M4/485 ,  H01M4/52 ,  H01M4/525 ,  H01M10/0525 ,  H01M10/36

CPC classification number: H01M4/131 ,  H01M4/0404 ,  H01M4/0421 ,  H01M4/0426 ,  H01M4/0471 ,  H01M4/1391 ,  H01M4/485 ,  H01M4/525 ,  H01M10/0525 ,  H01M2004/027

Abstract: In order to remedy the drawback, i.e. low initial efficiency and improve the cycle characteristic, of a lithium secondary cell employing SiO in a negative electrode (30) significantly without sacrificing the large initial charging capacity, characteristic to the lithium secondary cell a thin film of a silicon oxide is formed, as a negative electrode active material layer (32), on the surface of a current collector (31) by vacuum deposition or sputtering. Preferably, the thin film is formed by ion plating. The silicon oxide is SiOx (0.5≤x

Abstract translation: 大大提高是初始效率，这将是低，否则为故障，而不会降低的初始充电容量的大小，所有这些是使用的SiO作为负极的锂二次电池的特征。 循环特性得到提高。 为了实现这些改进，通过真空气相沉积或溅射的集电极31的薄膜的表面上形成为负极活性材料层32的氧化硅的薄膜优选地通过离子镀法形成。 氧化硅为SiO X（0.5‰¤X <1.0）和膜厚度是在0.1至50微米的范围内。 时使用的真空蒸镀源是具有1.0％或更小的磨损试验的重量减少百分比（的磨耗值）的SiO沉积物。 在真空蒸镀法，在集电体31的表面与清洁处理在真空中或在惰性气氛中施加之后，氧化硅的薄膜是形成在集电体的表面上，而不在集电体的表面暴露于 空气气氛。