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公开(公告)号：EP1658643B1
公开(公告)日：2018-11-14
申请号：EP04762553.8
申请日：2004-07-30
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公开(公告)号：EP1642347A2
公开(公告)日：2006-04-05
申请号：EP04738791.5
申请日：2004-06-25
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/02 , H01S5/3086
摘要： The invention relates to a radiation-emitting semi-conductor element provided with a layered structure, comprising an n-doped confinement layer (14), a p-doped confinement layer (22), and an active layer (18) emitting photons, said layer being arranged between the n-doped confinement layer (14) and the p-doped confinement layer (22). According to the invention, the n-doped confinement layer (14) is doped with a first n-dopant (or two n-dopants which are different from each other) in order to produce a high active doping and a precise doping profile, and the active layer (18) is doped with exclusively one second n dopant, which is different form the first dopant, in order to improve the layer quality of the active layer (18).
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3.发明公开
公开(公告)号：EP3745471A1
公开(公告)日：2020-12-02
申请号：EP19177581.6
申请日：2019-05-31
发明人： EBBECKE, Jens , KREUTER, Philipp , KLEMP, Christoph , BIEBERSDORF, Andreas , PIETZONKA, Ines , SUNDGREN, Petrus
IPC分类号： H01L33/00 , H01L21/268 , H01L21/18
摘要： A method of treating a semiconductor wafer (10) comprising a set of Aluminum Gallium Indium Phosphide light emitting diodes or AlGaInP-LEDs to increase the light generating efficiency of the AlGaInP-LEDs,
wherein each ALGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area (20) and a peripheral edge (22) surrounding the central light generating area,
the method comprising the step of treating the peripheral edge (22) of the core active layer of each AlGaInP-LED with a laser beam (L), thus increasing the minimum band gap in each peripheral edge (22) to such an extent that, during later operation of the AlGaInP-LED, the electron-hole recombination is essentially confined to the central light generating area.-
公开(公告)号：EP1642347B1
公开(公告)日：2008-08-13
申请号：EP04738791.5
申请日：2004-06-25
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/02 , H01S5/3086
摘要： The invention relates to a radiation-emitting semi-conductor element provided with a layered structure, comprising an n-doped confinement layer (14), a p-doped confinement layer (22), and an active layer (18) emitting photons, said layer being arranged between the n-doped confinement layer (14) and the p-doped confinement layer (22). According to the invention, the n-doped confinement layer (14) is doped with a first n-dopant (or two n-dopants which are different from each other) in order to produce a high active doping and a precise doping profile, and the active layer (18) is doped with exclusively one second n dopant, which is different form the first dopant, in order to improve the layer quality of the active layer (18).
摘要翻译： 本发明涉及设置有分层结构的发射辐射的半导体元件，其包括n掺杂限制层（14），p掺杂限制层（22）和发射光子的活性层（18），所述 层设置在n掺杂限制层（14）和p掺杂限制层（22）之间。 根据本发明，为了产生高活性掺杂和精确的掺杂分布，n型掺杂限制层（14）被掺杂有第一n型掺杂剂（或者彼此不同的两种n型掺杂剂），并且 为了改善有源层（18）的层质量，有源层（18）仅掺杂有与第一掺杂剂不同的第二n掺杂剂。
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公开(公告)号：EP3745472A1
公开(公告)日：2020-12-02
申请号：EP19177113.8
申请日：2019-05-28
发明人： KREUTER, Philipp , BIEBERSDORF, Andreas , KLEMP, Christoph , EBBECKE, Jens , PIETZONKA, Ines , SUNDGREN, Petrus
摘要： A method for manufacturing a semiconductor device, particularly an optoelectronic device, proposes to provide a growth substrate (10); to deposit an n-doped first layer (20) and an active region (30) on the n-doped first layer (20); then a second layer (50) is deposited onto the active region (30); the second layer is doped with Mg in the second layer (50); Subsequently to depositing Mg, Zn is deposited in the second layer (50) such that a concentration of Zn in the second layer is decreasing from a first value to a second value in a first area of the second layer adjacent to the active region, said first area in the range of 5 nm to 200 nm, in particularly less than 50nm.
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公开(公告)号：EP1771890A2
公开(公告)日：2007-04-11
申请号：EP05760046.2
申请日：2005-06-15
发明人： PIETZONKA, Ines , SCHMID, Wolfgang , WIRTH, Ralph
IPC分类号： H01L33/00
CPC分类号： H01L33/105 , H01L33/465
摘要： The invention relates to a luminescent diode (1) comprising an active area (7) which emits electromagnetic radiation in the direction of the main radiation (15). The active area (7) in the direction of the main radiation (15) is arranged downstream from a reflection-reducing layer sequence (16). Said reflection-reducing layer sequence contains a DBR mirror which is formed from at least one pair of layers (11, 12), a reflection coating (9) which is arranged downstream from the DBR-mirror (13) in the direction of the main radiation (15) and an intermediate layer (14) which is arranged between the DBR-mirror (13) and the reflection coating (9).
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公开(公告)号：EP1658643A1
公开(公告)日：2006-05-24
申请号：EP04762553.8
申请日：2004-07-30
IPC分类号： H01L33/00
摘要： The invention relates to a radiation emitting semi-conductor element with a semi-conductor body, comprising a first main surface (5), a second main surface (9) and a semi-conductor layer sequence (4) with an active zone (7) generating electromagnetic radiation. The semi-conductor layer sequence (4) is arranged between the first and the second main surface (5,9), a first current expansion layer (3) is arranged on the first main surface (5) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4) and a second current expansion layer (10) is arranged on the second main surface (9) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4).
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