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    LIGHT EMITTING ELEMENT
    8.
    发明公开
    LIGHT EMITTING ELEMENT 审中-公开
    发光元件

    公开(公告)号：EP3236505A1

    公开(公告)日：2017-10-25

    申请号：EP15869837.3

    申请日：2015-12-08

    申请人： STANLEY ELECTRIC CO., LTD.

    发明人： OBATA, Toshiyuki

    IPC分类号： H01L33/14 ,  H01L33/32

    CPC分类号： H01L33/007 ,  H01L33/025 ,  H01L33/14 ,  H01L51/502 ,  H01L51/5044 ,  H01L51/5096

    摘要： Provided is a light-emitting element which is capable of improving the external quantum efficiency by controlling a dopant concentration of an interface between a light-emitting layer and another semiconductor layer.
    A nitride-based semiconductor light-emitting element includes: a first semiconductor layer 20 of a first conductivity type; a second semiconductor layer 50 of a second conductivity type; a carrier block layer 40 provided in the second semiconductor layer 50 on a side closer to the first semiconductor layer 20 and containing an impurity of the second conductivity type; a light-emitting layer 30 provided between the first semiconductor layer 20 and the carrier block layer 40; and a spacer layer 35 which is provided between the carrier block layer 40 and the light-emitting layer 30 and makes the concentration of the impurity of the second conductivity type in the vicinity of the interface with the light-emitting layer 30 be at a predetermined concentration or less.

    摘要翻译： 本发明提供一种通过控制发光层与其他半导体层的界面的掺杂浓度，从而能够提高外部量子效率的发光元件。 氮化物基半导体发光元件包括：第一导电型的第一半导体层20; 第二导电类型的第二半导体层50; 设置在第二半导体层50中靠近第一半导体层20一侧并含有第二导电类型杂质的载流子阻挡层40; 设置在第一半导体层20和载流子阻挡层40之间的发光层30; 以及设置在载流子阻挡层40与发光层30之间并且使得与发光层30的界面附近的第二导电类型的杂质浓度处于预定的间隔层35 浓度或更低。