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1.发明公开SAPPHIRE SUBSTRATE, NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAPPHIRE SUBSTRATE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT 审中-公开蓝宝石基板，氮化物半导体发光元件中使用的蓝宝石衬底及其制造方法的氮化物半导体发光元件
公开(公告)号：EP2090680A4
公开(公告)日：2011-08-17
申请号：EP07830183
申请日：2007-10-19
申请人： PANASONIC ELEC WORKS CO LTD , RIKEN
CPC分类号： H01L21/02661 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01L33/16
摘要： The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate (1), an off-angle plane slanted from an m-plane (4) by a predetermined very small angle is prepared as a growth surface (3), which is a template of the crystal (2), at the time of growing a crystal (2) of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps (5) and terraces (6). According to the above-described configuration, even if an inexpensive sapphire substrate (1), which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step (5) as an a-plane on the terrace (6) by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace (6), and, in the mean time, the steps (5) become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.
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2.发明公开COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ILLUMINATION DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权发光半导体复合COMPONENT和光照装置及其制造发光复合半导体器件的方法
公开(公告)号：EP2254164A4
公开(公告)日：2011-06-29
申请号：EP09719384
申请日：2009-03-13
IPC分类号： H01L33/20 , C23C14/06 , H01L21/203 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/50
CPC分类号： H01L33/20 , B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/08 , H01L33/18
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3.发明公开
公开(公告)号：EP2290710A4
公开(公告)日：2011-06-29
申请号：EP09754639
申请日：2009-05-25
CPC分类号： H01L33/20 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/08 , H01L33/18
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