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    A compound resonator type semiconductor laser device
    2.
    发明公开
    A compound resonator type semiconductor laser device 失效
    一种化合物共振器型半导体激光器件

    公开(公告)号：EP0162660A3

    公开(公告)日：1986-12-17

    申请号：EP85303412

    申请日：1985-05-15

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Yamamoto, Saburo ,  Hayashi, Hiroshi ,  Miyauchi, Nobuyuki ,  Morimoto, Taiji ,  Maei, Shigeki

    IPC分类号： H01S03/19 ,  H01S03/082

    CPC分类号： H01S5/24 ,  H01S5/028 ,  H01S5/0622 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/4056

    摘要： A compound resonator type semiconductor laser device comprises a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.

    摘要翻译： 一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，该第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，该第二激光器操作区域包含与该谐振器的共面体共面的谐振器 第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖 保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面 具有保护膜以在其中获得高反射率。

    A semiconductor laser device with a protective film on the facets
    3.
    发明公开
    A semiconductor laser device with a protective film on the facets 无效
    Halbleiterlaser-Vorrichtung mit Schutzbelag an denSeitenflächen。

    公开(公告)号：EP0194835A2

    公开(公告)日：1986-09-17

    申请号：EP86301691.1

    申请日：1986-03-10

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Miyauchi, Nobuyuki ,  Hayashi, Hiroshi ,  Yamamoto, Saburo

    IPC分类号： H01S3/085 ,  H01S3/19

    CPC分类号： H01S5/028

    摘要： The present invention provides a semiconductor laser device with a protective film (B,F) on the facets (2,5), wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film (31) of low refractive index and the other of which is a dielectric film (42) of high refractive index, said multi-layered dielectric film (F) which covers at least one of the facets (2) being a light-permeable film with a reflectivity of 30% or less.

    摘要翻译： 本发明提供一种半导体激光器件，其在刻面（2,5）上具有保护膜（B，F），其中所述保护膜由多层电介质膜构成，所述多层电介质膜由至少两种 电介质膜，其中之一是低折射率的第一电介质膜（31），另一个是高折射率的电介质膜（42），所述多层电介质膜（F）覆盖至少一个 小面（2）是反射率为30％以下的透光性薄膜。

    Semiconductor laser
    4.
    发明公开
    Semiconductor laser 失效
    半导体激光

    公开(公告)号：EP0162668A2

    公开(公告)日：1985-11-27

    申请号：EP85303446.0

    申请日：1985-05-16

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Miyauchi, Nobuyuki ,  Maei, Shigeki ,  Yamamoto, Osamu ,  Morimoto, Taiji ,  Hayashi, Hiroshi ,  Yamamoto, Saburo

    IPC分类号： H01S3/08 ,  H01S3/19

    CPC分类号： H01S5/028 ,  H01S5/2232 ,  H01S5/2237

    摘要： A semiconductor laser includes a front mirror facet and a rear mirror facet. An A1 2 O 3 film coating is formed on the front mirror facet by the electron beam evaporation technique so that the front mirror facet has the reflectance between 10 and 20%. A multi-layered coating is formed on the rear mirror facet so that the rear mirror facet has the reflectance higher than 90%.

    摘要翻译： 半导体激光器包括前镜面和后镜面。 通过电子束蒸发技术在前镜面上形成A12O3膜涂层，使得前镜面的反射率在10％和20％之间。 在后镜面上形成多层涂层，使得后镜面具有高于90％的反射率。

    A compound resonator type semiconductor laser device
    5.
    发明公开
    A compound resonator type semiconductor laser device 失效
    Halbleiterlaservorrichtung mit zusammengesetzter Resonatorstruktur。

    公开(公告)号：EP0162660A2

    公开(公告)日：1985-11-27

    申请号：EP85303412.2

    申请日：1985-05-15

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Yamamoto, Saburo ,  Hayashi, Hiroshi ,  Miyauchi, Nobuyuki ,  Morimoto, Taiji ,  Maei, Shigeki

    IPC分类号： H01S3/19 ,  H01S3/082

    CPC分类号： H01S5/24 ,  H01S5/028 ,  H01S5/0622 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/4056

    摘要： A compound resonator type semiconductor laser device comprises a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.

    摘要翻译： 一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，该第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，该第二激光器操作区域包含与该谐振器的共面体共面的谐振器 第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖 保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面 具有保护膜以在其中获得高反射率。

    Semiconductor laser
    6.
    发明公开
    Semiconductor laser 失效
    半导体激光

    公开(公告)号：EP0099616A2

    公开(公告)日：1984-02-01

    申请号：EP83302006.8

    申请日：1983-04-08

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Hayakawa, Toshiro ,  Miyauchi, Nobuyuki ,  Yano, Seiki

    IPC分类号： H01S3/045

    CPC分类号： H01S5/02272 ,  H01S5/024 ,  H01S5/24 ,  H01S5/32308

    摘要： A GaAs semiconductor laser includes a GaAs semiconductor laser element, and a Cu heat sink attached to the GaAs semiconductor laser element through the use of an In solder. The GaAs semiconductor laser element includes an active layer sandwiched by cladding layers, and a substrate upon which various layers are formed. The GaAs semiconductor laser element is constructed so that the active layer is separated from the mounted surface by at least a distance which corresponds to 35 % of the entire thickness of the GaAs semiconductor laser element, thereby minimizing the stress applied to the active layer.

    摘要翻译： GaAs半导体激光器包括GaAs半导体激光器元件和通过使用In焊料附着到GaAs半导体激光器元件的Cu散热器。 GaAs半导体激光器元件包括夹在包层之间的有源层和形成各种层的衬底。 GaAs半导体激光器元件的结构使得有源层与安装表面分开至少一个距离，该距离相当于GaAs半导体激光器元件整个厚度的35％，从而使施加在有源层上的应力最小。

    An external cavity type semiconductor laser apparatus
    9.
    发明公开
    An external cavity type semiconductor laser apparatus 失效
    外腔型半导体激光装置

    公开(公告)号：EP0280581A3

    公开(公告)日：1989-03-08

    申请号：EP88301731.1

    申请日：1988-02-29

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Miyauchi, Nobuyuki ,  Kawanishi, Hidenori ,  Maei, Shigeki ,  Yamamoto, Osamu ,  Hayashi, Hiroshi

    IPC分类号： H01S3/025 ,  H01S3/085 ,  H01S3/19

    CPC分类号： H01S5/14 ,  H01S5/028

    摘要： An external cavity type semiconductor laser apparatus comprises a semiconductor laser device (1) and an external cavity (2), which are mounted on a single mounting base (3) with a space therebetween, wherein laser light emitted from the light-emitting rear facet (6) of the laser device is reflected by the external cavity (2) and returns to the laser device (1), the reflectivity of the light-emitting rear facet (6) of the laser device (1) being different from that of the light-emitting front facet (5) of the laser device (1).

    摘要翻译： 一种外腔型半导体激光装置包括：半导体激光器装置（1）和外腔（2），所述半导体激光器装置（1）和外腔（2）间隔一定距离地安装在单个安装基座（3）上，其中从发光后刻面 其特征在于，所述激光装置（1）的发光后侧面（6）的反射率由所述外腔（2）反射并返回至所述激光装置（1），所述激光装置（1）的发光后侧面（6） 激光装置（1）的发光前端面（5）。