公开(公告)号：EP3048681A1

公开(公告)日：2016-07-27

申请号：EP15305986.0

申请日：2015-06-25

Applicant: ALCATEL LUCENT

Inventor： PFEIFFER, Thomas ,  DEBREGEAS, Hélène Francoise ,  BERNOT, Romain ,  PROVOST, Jean Guy

IPC: H01S5/068 ,  H01S5/026 ,  H01S5/042

CPC classification number: H01S5/02453 ,  H01S3/0007 ,  H01S3/09702 ,  H01S3/1026 ,  H01S5/0261 ,  H01S5/0427 ,  H01S5/0612 ,  H01S5/0625 ,  H01S5/068

Abstract: This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser comprises: a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods. The application further relates to a method for driving a semiconductor laser.

Abstract translation: 本申请涉及显示自加热缓解的激光组件。 激光组件包括半导体激光器和用于驱动半导体激光器的驱动单元。 半导体激光器包括：用于响应于施加到第一半导体区域的第一驱动电流产生或调制光信号的第一半导体区域和布置在第一半导体区域附近并与其电绝缘的加热区域 第一个半导体区域。 驱动单元被配置为产生第一驱动电流和第二驱动电流，在半导体激光器的各个传输周期期间将第一驱动电流施加到第一半导体区域，并且将第二驱动电流以连续的间隔的间隔施加到加热区域 传输周期。 本申请还涉及一种用于驱动半导体激光器的方法。

公开(公告)号：EP3048680A1

公开(公告)日：2016-07-27

申请号：EP15290048.6

申请日：2015-01-23

Applicant: ALCATEL LUCENT

Inventor： Pfeiffer, Thomas

IPC: H01S5/068 ,  H01S5/026 ,  H01S5/042

CPC classification number: H01S5/02453 ,  H01S3/0007 ,  H01S3/09702 ,  H01S3/1026 ,  H01S5/0261 ,  H01S5/0427 ,  H01S5/0612 ,  H01S5/0625 ,  H01S5/068

Abstract: This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser comprises: a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a second semiconductor region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit Is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the second semiconductor region in intervals between successive transmission periods. The application further relates to a method for driving a semiconductor laser.

Abstract translation: 本申请涉及显示自加热缓解的激光组件。 激光组件包括半导体激光器和用于驱动半导体激光器的驱动单元。 半导体激光器包括：第一半导体区域，用于响应于施加到第一半导体区域的第一驱动电流产生或调制光信号;以及第二半导体区域，其布置在靠近第一半导体区域并且电绝缘 从第一个半导体区域。 驱动单元被配置为产生第一驱动电流和第二驱动电流，在半导体激光器的各个传输周期期间将第一驱动电流施加到第一半导体区域，并且将第二驱动电流以 连续传输期。 本申请还涉及一种用于驱动半导体激光器的方法。

公开(公告)号：EP2071683B1

公开(公告)日：2014-02-12

申请号：EP08021393.7

申请日：2008-12-09

Applicant: Oclaro Japan, Inc.

Inventor： Sasaki, Hiroyasu ,  Arimoto, Hideo

IPC: H01S5/022 ,  H01S5/042 ,  H01S5/0687 ,  H01S5/0625 ,  H01S5/14

CPC classification number: H01S5/141 ,  H01S5/02284 ,  H01S5/0427 ,  H01S5/0625 ,  H01S5/0687

公开(公告)号：EP2667463A1

公开(公告)日：2013-11-27

申请号：EP12737034.4

申请日：2012-01-11

Applicant: Sony Corporation

Inventor： WATANABE, Hideki ,  KURAMOTO, Masaru ,  OKI, Tomoyuki

IPC: H01S5/065 ,  H01S5/22

CPC classification number: H01S5/0658 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/0602 ,  H01S5/0625 ,  H01S5/0657 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/22 ,  H01S5/222 ,  H01S5/34333 ,  H01S2301/176

Abstract: A bi-section type GaN-based semiconductor laser device that has a configuration and a structure in which damage is less likely to be caused in a region in a saturable absorption region that faces a first light emission region is provided. The semiconductor laser device includes a first light emission region 41A, a second light emission region 41B, a saturable absorption region 42 sandwiched by the foregoing light emission regions, a first electrode, and a second electrode. Laser light is emitted from an end face on a second light emission region side thereof. The semiconductor laser device has a ridge stripe structure. The second electrode 62 is configured of a first portion 62A, a second portion 62B, and a third portion 62C. 1 2-ave /W 1-ave is satisfied where w 1-ave is an average width of a portion having the ridge stripe structure of the first portion 62A and W 2-ave is an average width of a portion having the ridge stripe structure of the second portion 62B.

Abstract translation: 提供了一种双面型GaN基半导体激光器件，其具有在面向第一发光区域的可饱和吸收区域中的区域中不易发生损伤的构造和结构。 半导体激光装置包括第一发光区域41A，第二发光区域41B，夹在前述发光区域之间的可饱和吸收区域42，第一电极和第二电极。 激光从其第二发光区域侧的端面发射。 该半导体激光装置具有脊条形结构。 第二电极62由第一部分62A，第二部分62B和第三部分62C构成。 1

公开(公告)号：EP2569832A2

公开(公告)日：2013-03-20

申请号：EP11724985.4

申请日：2011-05-09

Applicant: Osram Opto Semiconductors Gmbh

Inventor： KÖNIG, Harald ,  STRAUSS, Uwe ,  REILL, Wolfgang

IPC: H01S5/042 ,  H01S5/0625 ,  H01S5/40

CPC classification number: H01S5/30 ,  H01L33/005 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/4031 ,  H01L2924/00

Abstract: An edge-emitting semiconductor laser (1001) is specified, having: - a semiconductor body (1) which comprises an active zone (5) suitable for producing electromagnetic radiation; - at least two facets (7) on the active zone (5), which form a resonator (55); - at least two contact points (2) which are spaced apart from one another in a lateral direction (100) by at least one intermediate region (22) and which are mounted on an outer face (11) of the semiconductor body (1).

公开(公告)号：EP2071683A3

公开(公告)日：2010-09-01

申请号：EP08021393.7

申请日：2008-12-09

Applicant: OpNext Japan, Inc.

Inventor： Sasaki, Hiroyasu ,  Arimoto, Hideo

IPC: H01S5/06 ,  H01S5/0625

CPC classification number: H01S5/141 ,  H01S5/02284 ,  H01S5/0427 ,  H01S5/0625 ,  H01S5/0687

Abstract: A laser device for preventing deterioration of a light signal and a controlling method therefor. A wavelength tunable laser module provided with a resonator (20) including the wavelength tunable filter (24) and a semiconductor light amplifier (30) having a phase adjustment region and a light amplifying region (34), in which a wavelength margin between a peak transmission wavelength of a wavelength tunable filter and a mode hop occurring wavelength on a short wave side is smaller than that on a long wave side. A wavelength tunable laser module controller (50) including an optical output sampling portion (68) for detecting light intensity of light emitted from the resonator (20), a dither signal source (58) for generating a dither signal for varying a phase adjustment signal to be applied to the phase adjustment region so that the detected light intensity becomes the maximum, and an FM signal source (60) for generating an FM signal for oscillating the phase adjustment signal to be applied to the phase adjustment region with a period shorter than a variation period of the dither signal. The optical output sampling portion (68) detects the light intensity in synchronization with oscillation of the phase adjustment signal by the FM signal.

公开(公告)号：EP2146410A1

公开(公告)日：2010-01-20

申请号：EP08013004.0

申请日：2008-07-18

Applicant: Alcatel Lucent

Inventor： Shen, Alexandre ,  Duan, Guang-Hua

IPC: H01S5/50

CPC classification number: H01S5/026 ,  H01S5/0617 ,  H01S5/06236 ,  H01S5/0625

Abstract: An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This causes a first set of polarization modes to move in a spectral space with a different velocity than a second set of polarization modes. A bias current, or voltage, is used for controlling the overall birefringence effect in the device. The biasing for controlling the birefringence effect is performed such the TE modes and the TM modes of the device are made to coincide in their respective spectral position. Thus the device is made insensitive, or presents substantially reduced sensitivity, to the polarization of any incoming optical signal.

Abstract translation: 在光子器件，包括材料的所有的一个部分，其是从检查做了两个部分呈现不同的光学双折射率值另一个部分的材料不同。 这导致第一组偏振模式以在光谱空间中移动与不同的速度比第二组偏振模式。 偏置电流，或者电压，用于控制所述装置中的整体双折射效应。 用于控制双折射效应的偏置进行求TE模式和该装置的TM模式被制成在它们的respectivement光谱位置一致。 因此，该装置是由不敏感，或呈现基本上降低的敏感性，对任何进入的光信号的偏振。

公开(公告)号：EP2113973A1

公开(公告)日：2009-11-04

申请号：EP08305135.9

申请日：2008-04-29

Applicant: Alcatel Lucent

Inventor： Duan, Guang-Hua ,  Van Dijk, Frederic ,  Shen, Alexandre ,  Accard, Alain

IPC: H01S5/0625 ,  H01S5/065 ,  H01S5/12 ,  H01S1/02 ,  H01S5/042 ,  H01S5/06 ,  H01S5/40

CPC classification number: H01S5/12 ,  H01S1/02 ,  H01S5/0425 ,  H01S5/0604 ,  H01S5/0612 ,  H01S5/0625 ,  H01S5/06258 ,  H01S5/0657 ,  H01S5/1215 ,  H01S5/4006 ,  H01S5/4025 ,  H01S5/4087

Abstract: The present invention refers to a laser source comprising laser sections wherein at least three laser sections comprise each
- a distributed feedback laser (1) with a Bragg grating (5) having a predetermined grating period,
- an active layer (3) and
- an electrode adapted for being injected by an injection current (I)
wherein the grating periods of said at least three laser sections are different from each other and
wherein respective injection current values of said at least three laser sections are adjusted
thereby adjusting the shape and chirp of a pulse generated by said at least three laser sections.
Laser operation is adjusted such that the difference between any two neighbouring laser frequencies (F1,F2,F3) becomes equal. The laser may be actively or passively mode-locked. Millimeter waves may be generated by four-wave mixing.

Abstract translation: 本发明涉及一种激光源，其包括激光部分，其中至少三个激光部分包括每个具有预定光栅周期的布拉格光栅（5）的分布反馈激光器（1）， - 有源层（3）和 - 电极，其适于通过注射电流（I）注入，其中所述至少三个激光部分的光栅周期彼此不同，并且其中调节所述至少三个激光部分的各自的注射电流值，从而调节所述至少三个激光部分的形状和啁啾 由所述至少三个激光部分产生的脉冲。 调整激光操作，使得任何两个相邻激光频率（F1，F2，F3）之间的差值变得相等。 激光可以被主动或被动地锁定。 毫米波可能通过四波混频产生。

公开(公告)号：EP1533875B1

公开(公告)日：2007-11-14

申请号：EP04027587.7

申请日：2004-11-19

Applicant: Sacher, Joachim

Inventor： Sacher, Joachim

IPC: H01S5/14 ,  H01S5/06

CPC classification number: H01S5/0612 ,  H01S3/105 ,  H01S3/1055 ,  H01S5/005 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0617 ,  H01S5/0625 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/141 ,  H01S5/143

公开(公告)号：EP1710876A1

公开(公告)日：2006-10-11

申请号：EP04807480.1

申请日：2004-12-21

Applicant: Matsushita Electric Industries Co., Ltd.

Inventor： MIZUUCHI, K. c/o Matsushita Electric Ind. Co., Ltd ,  YAMAMOTO, K. c/o Matsushita Electric Ind. Co., Ltd ,  KASAZUMI, K. c/o Matsushita Electric Ind. Co., Ltd ,  KIDOGUCHI, I. c/o Matsushita Electric Ind. Co.,Ltd

IPC: H01S5/062

CPC classification number: H01S5/0625 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0624 ,  H01S5/1064 ,  H01S5/22

Abstract: According to the present invention, in a semiconductor laser device (10) having different facet reflectivities, an electrode disposed on a stripe ridge (107a) is divided into four electrode parts (1), (2), (3), and (4), and a larger injection current is injected to an electrode part that is closer to a light emission facet side.
According to this semiconductor laser device, a carrier density distribution in an active layer that is opposed to the stripe ridge can be matched to a light intensity distribution in the active layer, thereby preventing degradation in high output characteristic due to destabilization of transverse mode and reduction in gain which are caused by spatial hole burning.

Abstract translation: 根据本发明，在具有不同面反射率的半导体激光装置（10）中，将设置在条纹脊（107a）上的电极分为四个电极部（1），（2），（3）和（4 ），并且将更大的注入电流注入到更靠近发光小面侧的电极部分。 根据该半导体激光器件，与有源层相对的有源层中的载流子浓度分布可以与有源层中的光强度分布相匹配，从而防止由于横向模式的不稳定性而导致的高输出特性的劣化和还原 在空间孔燃烧引起的增益。