公开(公告)号：EP4358144A1

公开(公告)日：2024-04-24

申请号：EP22825047.8

申请日：2022-06-16

申请人： Sony Semiconductor Solutions Corporation

发明人： HANEDA, Masaki ,  KOTOO, Kengo ,  SHIRASU, Yoshiki ,  SHIMOMURA, Kazuki ,  FUJII, Nobutoshi ,  HIRANO, Takaaki ,  FUJII, Yosuke ,  OINOUE, Takashi ,  SAITO, Suguru ,  ISHIMARU, Toshiyuki ,  OHSHIMA, Keiji ,  IMAI, Shinichi ,  KUROTORI, Takuya ,  SUGIYAMA, Tomohiro ,  MITSUHASHI, Ikue ,  TOKUOKA, Kenichi

IPC分类号： H01L27/146 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/522 ,  H01L21/3205 ,  H01L21/768 ,  H01L27/146 ,  H01L21/02

摘要： An optical detection device including a desired through electrode is provided. The optical detection device includes a first semiconductor layer that includes a photoelectric conversion region, and has one surface corresponding to a first surface and another surface corresponding to a second surface that is a light entrance surface, a second semiconductor layer that has one surface corresponding to a third surface and another surface corresponding to a fourth surface, a second wiring layer overlapped with the third surface of the second semiconductor layer, a third wiring layer overlapped with the fourth surface of the second semiconductor layer, a first wiring layer that has one surface overlapped with the first surface of the first semiconductor layer and another surface overlapped with one of the second wiring layer and the third wiring layer, a first conductor that has a first width, includes a first material, and penetrates the second semiconductor layer in a thickness direction, and a second conductor that has a second width smaller than the first width, includes a second material different from the first material, and penetrates the second semiconductor layer in the thickness direction.