专利检索 ap:("TOSOH CORP" OR "SAGAMI CHEM RES") AND inv:"KAWANO KAZUHISA" 第 1 页

1.

发明公开
ORGANOIRIDIUM COMPOUND, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING FILM 有权
标题翻译：铱有机化合物，制造方法，用于制造薄膜和方法

公开(公告)号：EP1657245A4

公开(公告)日：2009-07-08

申请号：EP04771757

申请日：2004-08-11

申请人： TOSOH CORP , SAGAMI CHEM RES

发明人： KAWANO KAZUHISA , TAKAMORI MAYUMI , OSHIMA NORIAKI

IPC分类号： C07F17/00 , C07F15/00 , C07F17/02 , C23C16/18 , H01L20060101

CPC分类号： C07F17/02 , C23C16/18

摘要： An organometallic compound which has a low melting point and excellent vaporization characteristics and can deposit a film on substrates at low temperatures; and a process for producing an iridium-containing film from the organometallic compound. A compound represented by the general formula [2] or the general formula [3]: [2] [3] is reacted with a compound represented by the general formula [4]: [4] to obtain an organoiridium compound represented by the general formula [1]: [1] [In the formulae, R1 represents hydrogen or lower alkyl; R2 represents lower alkyl; X represents halogeno; and M represents an alkali metal.] This compound is used as a raw material to produce an iridium-containing film.

2.

发明公开
RUTHENIUM COMPOUND, PROCESS FOR PRODUCING SAME, PROCESS FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM USING SAME, AND RUTHENIUM-CONTAINING THIN FILM 有权
标题翻译：钌，PROCESS FOR THEIR用于生产薄膜那和钌钌薄膜

公开(公告)号：EP2371832A4

公开(公告)日：2012-07-18

申请号：EP09834838

申请日：2009-12-21

申请人： TOSOH CORP

发明人： FURUKAWA TAISHI , OSHIMA NORIAKI , KAWANO KAZUHISA , CHIBA HIROKAZU

IPC分类号： C07F17/02 , C23C16/18 , H01L21/28 , H01L21/285

CPC分类号： C07F17/02 , B01J31/2295 , C07F15/0046 , C23C16/18 , H01L28/65

3.

发明公开
RUTHENIUM COMPLEX MIXTURE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING FILM, RUTHENIUM-CONTAINING FILM AND METHOD FOR PRODUCING SAME 有权
标题翻译： RUTHENIUMKOMPLEXMISCHUNG，用于生产膜的组合物，钌膜及其制造方法

公开(公告)号：EP2520690A4

公开(公告)日：2013-11-13

申请号：EP10840837

申请日：2010-11-29

申请人： TOSOH CORP

发明人： MANIWA ATSUSHI , OSHIMA NORIAKI , KAWANO KAZUHISA , FURUKAWA TAISHI , CHIBA HIROKAZU , YAMAMOTO TOSHIKI

IPC分类号： C23C16/18 , C07F15/00 , H01L21/28 , H01L21/285

CPC分类号： C07F17/02 , C23C16/18 , H01L21/28088 , H01L21/28556 , H01L21/31695 , H01L21/32051 , H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

4.

发明公开
RUTHENIUM COMPLEX AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM 审中-公开
标题翻译：钌和方法及其制造及其制造方法薄膜钌

公开(公告)号：EP2930179A4

公开(公告)日：2016-10-05

申请号：EP13860425

申请日：2013-12-06

申请人： TOSOH CORP , SAGAMI CHEMICAL RES INST

发明人： TADA KENICHI , YAMAMOTO TOSHIKI , OIKE HIROYUKI , MANIWA ATSUSHI , CHIBA HIROKAZU , IWANAGA KOHEI , KAWANO KAZUHISA

IPC分类号： C07F15/00 , C23C16/18 , H01L21/316 , H01L21/318

CPC分类号： H01L21/28568 , C07F7/02 , C07F15/0046 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76871

摘要： To provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas. [Chem. 1] (wherein R 1a to R 7a , R 8 , R 9 and R 10 to R 18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.)