公开(公告)号：EP1657245A4

公开(公告)日：2009-07-08

申请号：EP04771757

申请日：2004-08-11

申请人： TOSOH CORP ,  SAGAMI CHEM RES

发明人： KAWANO KAZUHISA ,  TAKAMORI MAYUMI ,  OSHIMA NORIAKI

IPC分类号： C07F17/00 ,  C07F15/00 ,  C07F17/02 ,  C23C16/18 ,  H01L20060101

CPC分类号： C07F17/02 ,  C23C16/18

摘要： An organometallic compound which has a low melting point and excellent vaporization characteristics and can deposit a film on substrates at low temperatures; and a process for producing an iridium-containing film from the organometallic compound. A compound represented by the general formula [2] or the general formula [3]: [2] [3] is reacted with a compound represented by the general formula [4]: [4] to obtain an organoiridium compound represented by the general formula [1]: [1] [In the formulae, R1 represents hydrogen or lower alkyl; R2 represents lower alkyl; X represents halogeno; and M represents an alkali metal.] This compound is used as a raw material to produce an iridium-containing film.

公开(公告)号：EP1947081A4

公开(公告)日：2008-10-22

申请号：EP06822809

申请日：2006-11-01

申请人： TOSOH CORP ,  SAGAMI CHEM RES

发明人： TADA KEN-ICHI ,  INABA KOICHIRO ,  FURUKAWA TAISHI ,  CHIBA HIROKAZU ,  YAMAKAWA TETSU ,  OSHIMA NORIAKI

IPC分类号： C07C211/65 ,  C07F7/28 ,  C23C16/34

CPC分类号： C23C16/18 ,  C07C211/65 ,  C07C251/08 ,  C07F7/006 ,  C23C16/34 ,  C23C16/405

摘要： The invention relates to novel titanium complexes which have excellent vaporization characteristics and thermal stability and are useful as raw material in forming titanium-containing thin films by CVD, ALD, or the like; a process for the production of the complexes; titanium-containing thin films formed by using the complexes; and a method for formation of the films. According to the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) with metallic lithium and then with a tetrakisamido complex represented by the general formula (3) and a titanium-containing thin film is formed by using the titanium complex as the raw material: [Chemical formula 1] (2) [Chemical formula 2] Ti(NR 5 R 6 ) 4 (3) [Chemical formula 3] (1) wherein R 1 and R 4 are each alkyl of 1 to 6 carbon atoms, or the like; R 2 and R 3 are each independently hydrogen, alkyl of 1 to 3 carbon atoms, or the like; and R 5 and R 6 are each independently alkyl of 1 to 4 carbon atoms, or the like.

公开(公告)号：EP1852438A4

公开(公告)日：2008-02-06

申请号：EP06712311

申请日：2006-01-25

申请人： TOSOH CORP ,  SAGAMI CHEM RES

发明人： SEKIMOTO KENICHI ,  TADA KEN-ICHI ,  TAKAMORI MAYUMI ,  YAMAKAWA TETSU ,  FURUKAWA TAISHI ,  OSHIMA NORIAKI

IPC分类号： C07F17/00 ,  C23C16/30

CPC分类号： C23C16/18 ,  C07F17/00

摘要： Disclosed is a novel tantalum compound which enables to selectively form a tantalum-containing film which does not include a halogen or the like, or a tantalum-containing film which includes a desired element. Also disclosed are a method for producing such a tantalum compound, and a method for forming a tantalum-containing film which includes a desired element. Specifically disclosed is a tantalum compound represented by the general formula (1) or (2) below. [Chemical formula 1] (1) (In the formula (1), R 1 represents a straight-chain alkyl group having 2-6 carbon atoms.) [Chemical formula 2] (2) (In the formula (2), R 2 represents a straight-chain alkyl group having 2-6 carbon atoms.) Also specifically disclosed is a method for forming a tantalum-containing film by using a tantalum compound represented by the general formula (6) below as a raw material. [Chemical formula 3] (6) (In the formula (6), j, k, m and n respectively represent an integer of 1-4 satisfying j + k = 5 and m + n = 5; and R 3 -R 6 respectively represent a hydrogen atom, an alkyl group having 1-6 carbon atoms or the like.)

公开(公告)号：EP2058295A4

公开(公告)日：2011-03-30

申请号：EP07792748

申请日：2007-08-20

申请人： TOSOH CORP ,  SAGAMI CHEM RES

发明人： TADA KEN-ICHI ,  FURUKAWA TAISHI ,  INABA KOICHIRO ,  YOTSUYA TADAHIRO ,  CHIBA HIROKAZU ,  YAMAMOTO TOSHIKI ,  YAMAKAWA TETSU ,  OSHIMA NORIAKI

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C07F9/00 ,  C23C16/18

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

公开(公告)号：EP1921061A4

公开(公告)日：2011-03-16

申请号：EP06781947

申请日：2006-07-28

申请人： TOSOH CORP ,  SAGAMI CHEM RES

发明人： TADA KEN-ICHI ,  INABA KOICHIRO ,  FURUKAWA TAISHI ,  YAMAKAWA TETSU ,  OSHIMA NORIAKI

IPC分类号： C07C257/12 ,  C07C257/14 ,  C07F5/00 ,  C07F5/06 ,  C07F7/00 ,  C07F7/28 ,  C23C16/40 ,  H01L21/312

CPC分类号： H01L21/3141 ,  C07C257/14 ,  C07F5/003 ,  C07F5/069 ,  C07F7/006 ,  C23C16/18 ,  C23C16/40

公开(公告)号：EP2339594A4

公开(公告)日：2016-11-23

申请号：EP09822047

申请日：2009-10-21

申请人： TOSOH CORP ,  SAGAMI CHEMICAL RES INST

发明人： YAMAKAWA TETSU ,  OSHIMA NORIAKI ,  KAWABATA TAKAHIRO ,  KINOSHITA TOMOYUKI ,  INASE TOSHIO

IPC分类号： H01B13/00 ,  B22F9/00 ,  B22F9/20 ,  B22F9/24 ,  C23C18/08 ,  C23C18/16

CPC分类号： C23C18/08 ,  B22F9/24 ,  B22F2998/00 ,  H01B1/02 ,  H01B1/026 ,  B22F1/0018

摘要： To provide a composition with which a metal film can be directly produced from a high-valent metal compound, a method for producing a metal film, and a method for producing a metal powder. Using a composition for production of a metal film of copper, silver or indium, which comprises a high-valent compound of copper, silver or indium, a linear, branched or cyclic C 1-18 alcohol and a Group VIII metal catalyst, a coating film is formed, followed by reduction by heating to produce a metal film of copper, silver or indium. Further, using metal particles of silver, copper of indium having a surface layer comprising a high-valent compound of copper, silver or indium, instead of the high-valent compound of copper, silver or indium, a metal film of copper, silver or indium is produced in the same manner as above.

公开(公告)号：EP2371832A4

公开(公告)日：2012-07-18

申请号：EP09834838

申请日：2009-12-21

申请人： TOSOH CORP

发明人： FURUKAWA TAISHI ,  OSHIMA NORIAKI ,  KAWANO KAZUHISA ,  CHIBA HIROKAZU

IPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC分类号： C07F17/02 ,  B01J31/2295 ,  C07F15/0046 ,  C23C16/18 ,  H01L28/65

公开(公告)号：EP2520690A4

公开(公告)日：2013-11-13

申请号：EP10840837

申请日：2010-11-29

申请人： TOSOH CORP

发明人： MANIWA ATSUSHI ,  OSHIMA NORIAKI ,  KAWANO KAZUHISA ,  FURUKAWA TAISHI ,  CHIBA HIROKAZU ,  YAMAMOTO TOSHIKI

IPC分类号： C23C16/18 ,  C07F15/00 ,  H01L21/28 ,  H01L21/285

CPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31695 ,  H01L21/32051 ,  H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

公开(公告)号：EP2754638A4

公开(公告)日：2015-08-05

申请号：EP12830501

申请日：2012-09-03

申请人： TOSOH CORP ,  SAGAMI CHEMICAL RES INST

发明人： KINOSHITA TOMOYUKI ,  IWANAGA KOHEI ,  ASANO SACHIO ,  KAWABATA TAKAHIRO ,  OSHIMA NORIAKI ,  HIRAI SATORI ,  HARADA YOSHINORI ,  ARAI KAZUYOSHI ,  TADA KEN-ICHI

IPC分类号： C01B13/32 ,  C01B33/113 ,  C01G23/04 ,  C07F7/00 ,  C07F7/02 ,  C07F7/10 ,  C07F7/18 ,  C07F7/28 ,  C09D1/00 ,  H01L21/02 ,  H01L21/316

CPC分类号： C09D1/00 ,  C01B33/113 ,  C07F7/006 ,  C07F7/025 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02216 ,  H01L21/02282

摘要： An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.