公开(公告)号：EP2930179A4

公开(公告)日：2016-10-05

申请号：EP13860425

申请日：2013-12-06

申请人： TOSOH CORP ,  SAGAMI CHEMICAL RES INST

发明人： TADA KENICHI ,  YAMAMOTO TOSHIKI ,  OIKE HIROYUKI ,  MANIWA ATSUSHI ,  CHIBA HIROKAZU ,  IWANAGA KOHEI ,  KAWANO KAZUHISA

IPC分类号： C07F15/00 ,  C23C16/18 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/28568 ,  C07F7/02 ,  C07F15/0046 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871

摘要： To provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas. [Chem. 1] (wherein R 1a to R 7a , R 8 , R 9 and R 10 to R 18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.)

公开(公告)号：EP2371832A4

公开(公告)日：2012-07-18

申请号：EP09834838

申请日：2009-12-21

申请人： TOSOH CORP

发明人： FURUKAWA TAISHI ,  OSHIMA NORIAKI ,  KAWANO KAZUHISA ,  CHIBA HIROKAZU

IPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC分类号： C07F17/02 ,  B01J31/2295 ,  C07F15/0046 ,  C23C16/18 ,  H01L28/65

公开(公告)号：EP2058295A4

公开(公告)日：2011-03-30

申请号：EP07792748

申请日：2007-08-20

申请人： TOSOH CORP ,  SAGAMI CHEM RES

发明人： TADA KEN-ICHI ,  FURUKAWA TAISHI ,  INABA KOICHIRO ,  YOTSUYA TADAHIRO ,  CHIBA HIROKAZU ,  YAMAMOTO TOSHIKI ,  YAMAKAWA TETSU ,  OSHIMA NORIAKI

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C07F9/00 ,  C23C16/18

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

公开(公告)号：EP2520690A4

公开(公告)日：2013-11-13

申请号：EP10840837

申请日：2010-11-29

申请人： TOSOH CORP

发明人： MANIWA ATSUSHI ,  OSHIMA NORIAKI ,  KAWANO KAZUHISA ,  FURUKAWA TAISHI ,  CHIBA HIROKAZU ,  YAMAMOTO TOSHIKI

IPC分类号： C23C16/18 ,  C07F15/00 ,  H01L21/28 ,  H01L21/285

CPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31695 ,  H01L21/32051 ,  H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

公开(公告)号：EP1947081A4

公开(公告)日：2008-10-22

申请号：EP06822809

申请日：2006-11-01

申请人： TOSOH CORP ,  SAGAMI CHEM RES

发明人： TADA KEN-ICHI ,  INABA KOICHIRO ,  FURUKAWA TAISHI ,  CHIBA HIROKAZU ,  YAMAKAWA TETSU ,  OSHIMA NORIAKI

IPC分类号： C07C211/65 ,  C07F7/28 ,  C23C16/34

CPC分类号： C23C16/18 ,  C07C211/65 ,  C07C251/08 ,  C07F7/006 ,  C23C16/34 ,  C23C16/405

摘要： The invention relates to novel titanium complexes which have excellent vaporization characteristics and thermal stability and are useful as raw material in forming titanium-containing thin films by CVD, ALD, or the like; a process for the production of the complexes; titanium-containing thin films formed by using the complexes; and a method for formation of the films. According to the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) with metallic lithium and then with a tetrakisamido complex represented by the general formula (3) and a titanium-containing thin film is formed by using the titanium complex as the raw material: [Chemical formula 1] (2) [Chemical formula 2] Ti(NR 5 R 6 ) 4 (3) [Chemical formula 3] (1) wherein R 1 and R 4 are each alkyl of 1 to 6 carbon atoms, or the like; R 2 and R 3 are each independently hydrogen, alkyl of 1 to 3 carbon atoms, or the like; and R 5 and R 6 are each independently alkyl of 1 to 4 carbon atoms, or the like.