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    Semiconductor detector
    1.
    发明公开
    Semiconductor detector 审中-公开
    Halbleiterdetektor

    公开(公告)号：EP2796897A1

    公开(公告)日：2014-10-29

    申请号：EP14150977.8

    申请日：2014-01-13

    申请人： Tsinghua University ,  Nuctech Company Limited

    发明人： Li, Yuanjing ,  Zhang, Lan ,  Li, Yulan ,  Liu, Yinong ,  Fu, Jianqiang ,  Jiang, Hao ,  Deng, Zhi ,  Xue, Tao ,  Zhang, Wei ,  Li, Jun

    IPC分类号： G01T1/24

    CPC分类号： G01T1/366 ,  G01T1/241 ,  G01T3/08

    摘要： The invention provides a semiconductor detector (100), and the semiconductor detector (100) comprises a semiconductor crystal (101), a cathode (102), an anode (103) and at least one ladder electrode (104); the semiconductor crystal (101) comprises a top surface (101-2), a bottom surface (101-1) and at least one side (101-3); the cathode (102), the anode (103) and the ladder electrode (104) are conductive thin films deposited on a surface of the semiconductor crystal (101); the cathode (102) is disposed on the bottom surface (101-1) of the semiconductor crystal (101), the anode (103) is disposed on the top surface (101-2) of the semiconductor crystal (101), the ladder electrode (104) is disposed on the at least one side (101-3) of the semiconductor crystal (101); and the ladder electrode (104) comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

    摘要翻译： 本发明提供一种半导体检测器（100），半导体检测器（100）包括半导体晶体（101），阴极（102），阳极（103）和至少一个梯形电极（104） 半导体晶体（101）包括顶表面（101-2），底表面（101-1）和至少一个侧面（101-3）; 阴极（102），阳极（103）和梯形电极（104）是沉积在半导体晶体（101）的表面上的导电薄膜; 阴极（102）设置在半导体晶体（101）的底表面（101-1）上，阳极（103）设置在半导体晶体（101）的顶表面（101-2）上，梯子 电极（104）设置在半导体晶体（101）的至少一个侧面（101-3）上; 并且梯形电极（104）包括多个子电极。 与现有技术相比，半导体检测器可以提高能量分辨率。

    THRESHOLD VALUE OPTIMIZING METHOD AND APPARATUS BASED ON K-EDGE IMAGING, DEVICE, AND MEDIUM
    3.
    发明公开
    THRESHOLD VALUE OPTIMIZING METHOD AND APPARATUS BASED ON K-EDGE IMAGING, DEVICE, AND MEDIUM 审中-公开

    公开(公告)号：EP3632328A1

    公开(公告)日：2020-04-08

    申请号：EP19762285.5

    申请日：2019-05-16

    申请人： Nuctech Company Limited ,  Tsinghua University

    发明人： Xing, Yuxiang ,  Huang, Kaixin ,  Zhang, Li ,  Shen, Le ,  Deng, Zhi ,  Chen, Zhiqiang ,  Liu, Yinong

    IPC分类号： A61B6/03 ,  G01T1/24

    摘要： The present application provides a method, apparatus, device and medium for optimizing thresholds based on K-edge imaging. The method comprises: pre-scanning, by using a photon counting detector, an object to be detected according to a preset threshold group, to obtain first detection data; determining, according to the first detection data, line integral values of decomposition coefficients of individual basis functions in a basis function combination of each ray, wherein each ray has a fixed basis function combination; selecting, according to the line integral values of the decomposition coefficients of individual basis functions in the basis function combination of the each ray, rays of which a line integral value of a contrast agent material basis function in the fixed basis function combination is greater than a preset line integration threshold; inputting detection data corresponding to each of the selected rays to a pre-trained neural network model, to obtain a local optimal threshold group of each of the selected rays; and determining, based on local optimal threshold groups, a global optimal threshold group for the K-edge imaging of the photon counting detector.