公开(公告)号：EP2770083B1

公开(公告)日：2015-11-18

申请号：EP13155936.1

申请日：2013-02-20

申请人： University of West Bohemia in Pilsen ,  TRUMPF Huettinger Sp. Z o. o.

发明人： Bugyi, Rafal ,  Vlcek, Jaroslav ,  Rezek, Jiri ,  Lazar, Jan

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/54

CPC分类号： C23C14/0042 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/548 ,  H01J37/3467

摘要： A method and apparatus for monitoring and controlling reactive sputter deposition are provided. They are particularly useful for high-rate deposition of dielectric stoichiometric compounds (e.g., metal-oxides, metal-nitrides, metal-oxynitrides, etc.) on various substrates using high power magnetron sputtering a metal target, including high power impulse magnetron sputtering with target power densities of up to several kWcm -2 in short target (cathode) voltage pulses (typically 40 µs to 200 µs). For a given nominal target power level, target material and source gases, a pulsed flow rate of the reactive gas into a vacuum chamber is controlled at a constant target voltage, kept by a power supply, to promote sputter deposition of the dielectric stoichiometric films in a transition region between a "metallic mode" and a "covered (poisoned) mode".

摘要翻译： 提供了用于监测和控制反应溅射沉积的方法和装置。 它们对于使用高功率磁控溅射金属靶的各种基板上的介电化学计量化合物（例如，金属氧化物，金属氮化物，金属 - 氮氧化物等）的高速沉积特别有用，包​​括大功率脉冲磁控溅射 短目标（阴极）电压脉冲（通常为40μs至200μs）的目标功率密度高达几kWcm -2。 对于给定的标称目标功率水平，目标材料和源气体，将进入真空室的反应气体的脉冲流速控制在由电源保持的恒定目标电压下，以促进电介质化学计量膜的溅射沉积 “金属模式”和“覆盖（中毒）模式”之间的过渡区域。

公开(公告)号：EP2770083A1

公开(公告)日：2014-08-27

申请号：EP13155936.1

申请日：2013-02-20

申请人： University of West Bohemia in Pilsen ,  TRUMPF Huettinger Sp. Z o. o.

发明人： Bugyi, Rafal ,  Vlcek, Jaroslav ,  Rezek, Jiri ,  Lazar, Jan

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/54

CPC分类号： C23C14/0042 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/548 ,  H01J37/3467

摘要： A method and apparatus for monitoring and controlling reactive sputter deposition are provided. They are particularly useful for high-rate deposition of dielectric stoichiometric compounds (e.g., metal-oxides, metal-nitrides, metal-oxynitrides, etc.) on various substrates using high power magnetron sputtering a metal target, including high power impulse magnetron sputtering with target power densities of up to several kWcm -2 in short target (cathode) voltage pulses (typically 40 µs to 200 µs). For a given nominal target power level, target material and source gases, a pulsed flow rate of the reactive gas into a vacuum chamber is controlled at a constant target voltage, kept by a power supply, to promote sputter deposition of the dielectric stoichiometric films in a transition region between a "metallic mode" and a "covered (poisoned) mode".

公开(公告)号：EP2541584B1

公开(公告)日：2018-08-08

申请号：EP11171580.1

申请日：2011-06-27

申请人： TRUMPF Huettinger Sp. Z o. o.

发明人： Klimczak, Andrzej ,  Ozimek, Pawel ,  Bugyi, Rafal

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： C23C14/46 ,  H01J37/3405

摘要： A method of generating a highly ionized plasma in a plasma chamber (2), comprises the steps of: a. providing a neutral gas to be ionized in the plasma chamber (2) at pressure below 50 Pa; b. supplying at least one high energy high power electrical pulse with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber (2) c. producing a highly ionized plasma from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period, d. sputtering atoms from the target with the highly ionized plasma, e. ionizing at least part of the sputtered atoms.