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    AN ANTIMICROBIAL MULTILAYER THIN-FILM MATERIALS COATING
    6.
    发明公开
    AN ANTIMICROBIAL MULTILAYER THIN-FILM MATERIALS COATING 审中-实审

    公开(公告)号：EP4421207A1

    公开(公告)日：2024-08-28

    申请号：EP23158463.2

    申请日：2023-02-24

    申请人： Latvijas Universitates Cietvielu fizikas instituts

    发明人： SKVORCOVA, Vera ,  ZUBKINS, M rti ,  PURANS, Juris ,  VIBORNIJS, Viktors ,  STRODS, Edvards ,  AULIKA, Ilze ,  ZAJAKINA, Anna ,  KOROTKAJA, Ksenija ,  RUDEVICA, Zanna

    IPC分类号： C23C14/00 ,  C03C17/36 ,  C23C14/08 ,  C23C14/18 ,  C23C14/20 ,  C23C14/34 ,  C23C14/35 ,  C23C28/00

    CPC分类号： C23C14/0068 ,  C23C14/083 ,  C23C14/18 ,  C23C14/185 ,  C23C14/205 ,  C23C14/35 ,  C23C14/3485 ,  C03C17/3642 ,  C03C17/3649 ,  C23C28/323 ,  C23C28/3455 ,  C23C28/32 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/245 ,  C03C2217/2420130101 ,  C03C2218/15620130101

    摘要： The invention relates to the field of antimicrobial-thin film coatings, in particular to vacuum deposition of transparent conductive coatings by magnetron sputtering. The proposed process for deposition of an antimicrobial multilayer coating on a substrate by reactive magnetron sputtering, comprises the following steps:(i)positioning a substrate in a vacuum chamber having two magnetrons: one and two and tungsten and cuprum sources for sputtered particles and a process gas shroud means for partially enveloping the magnetrons one and two, the substrate having a surface facing the sources;(ii)withdrawing and depleting gas from the vacuum chamber and creating process pressure below 1×10-5 Torr;(iii)introducing an inert gas and oxygen to the shroud means and the vacuum chamber with 5×10-3 - 30×10-3 Torr said gases partial pressure;(iv)operating the magnetron one to sputter tungsten particles from the tungsten source for coating the substrate surface with a tungsten oxide layer; as soon as the desired thickness of coating on the substrate surface is reached, disactivating the magnetron one;(v)withdrawing and depleting gas from the vacuum chamber and creating process pressure below 1×10-5 Torr;(vi)introducing an inert gas to the shroud means and the vacuum chamber with 5×10-3 - 7×10-3 Torr inert gas partial pressure;(vii)operating the magnetron two to sputter cuprum particles from the cuprum source for coating the tungsten oxide layer obtained at the step (iv) with a cuprum layer; as soon as the desired thickness of the cuprum layer coating on the tungsten oxide layer is reached, disactivating the magnetron two; (viii) introducing oxygen to the shroud means and the vacuum chamber with 5×10-3 - 10×10-3 Torr oxygen partial pressure;(ix)operating the magnetron one to sputter tungsten particles from the tungsten source for coating the cuprum layer obtained at the step (vii) by a tungsten oxide layer; as soon as the desired thickness of coating on the cuprum layer is reached, disactivating the magnetron one.