公开(公告)号：EP4454012A1

公开(公告)日：2024-10-30

申请号：EP22839341.9

申请日：2022-12-22

申请人： Robert Bosch GmbH

发明人： FREY, Yannick Fabian

IPC分类号： H01L23/427 ,  F28D15/02 ,  F28D15/04

公开(公告)号：EP4447629A1

公开(公告)日：2024-10-16

申请号：EP23829392.2

申请日：2023-02-13

申请人： ZTE Corporation

发明人： SUN, Zhen ,  CHEN, Xiaoxue ,  DUAN, Zhiwei ,  XU, Qingsong

IPC分类号： H05K7/20 ,  F28D15/04 ,  H01L23/427

摘要： Embodiments of the present application provide a vapor chamber, a radiator and an electronic device. The vapor chamber includes: a bottom plate, a top plate, a side plate and a backflow piece. The bottom plate includes a first heat dissipation area and a second heat dissipation area provided at a peripheral side of the first heat dissipation area. The first heat dissipation area is provided corresponding to the heating element. The top plate is spaced apart from the bottom plate. The side plate surrounds the peripheral side of the second heat dissipation area and connects the bottom plate and the top plate. The bottom plate, the top plate and the side plate are enclosed to form an evaporation cavity for accommodating a fluid medium. The backflow piece is provided in the evaporation cavity and connects the bottom plate and the top plate. The first heat dissipation area is provided with at least a first capillary structure layer on the side near the top plate, and the second heat dissipation area is provided with at least a second capillary structure layer on the side near the top plate. The capillary force of the first capillary structure layer is greater than that of the second capillary structure layer, and the flow resistance of the fluid medium in the second capillary structure layer is smaller than that in the first capillary structure layer.

公开(公告)号：EP4435850A1

公开(公告)日：2024-09-25

申请号：EP24150868.8

申请日：2024-01-09

申请人： Samsung Electronics Co., Ltd.

发明人： KANG, Sungchan ,  SON, Daehyuk ,  HONG, Seogwoo

IPC分类号： H01L23/427 ,  F28D15/04 ,  H01L29/06

CPC分类号： H01L23/427 ,  F28D15/046 ,  H01L29/0657

摘要： A semiconductor device includes: a semiconductor chip; a cooling channel configured to allow a coolant to (i) flow in liquid phase and (ii) absorb heat generated by the semiconductor chip during operation; and a wick structure configured to generate a capillary force for moving the coolant in the liquid phase along a wall surface of the cooling channel. The wick structure includes a suspended wick structure that is disposed apart from the wall surface by a capillary distance.

公开(公告)号：EP4419854A1

公开(公告)日：2024-08-28

申请号：EP22801140.9

申请日：2022-10-12

申请人： Commissariat à l'énergie atomique et aux énergies alternatives ,  Airbus Defence and Space SAS

发明人： MARIOTTO, Mathieu ,  CHAMPEL, Bénédicte ,  GRUSS, Jean-Antoine

IPC分类号： F28D15/02 ,  F28D15/04

CPC分类号： F28D15/046 ,  F28D15/0233

公开(公告)号：EP4414157A1

公开(公告)日：2024-08-14

申请号：EP24153398.3

申请日：2024-01-23

申请人： Meta Platforms Technologies, LLC

发明人： Vakhshouri, Kiarash

IPC分类号： B29C59/16 ,  F28D15/02 ,  F28D15/04 ,  B23K26/362 ,  B23K26/402 ,  B29C35/08

CPC分类号： B29C59/16 ,  B29C2035/082720130101 ,  B29C2035/083820130101 ,  B29C2791/00920130101 ,  F28D15/025 ,  B23K26/362 ,  B23K26/402 ,  F28F2245/0220130101 ,  F28F2245/0420130101 ,  H01L23/427

摘要： Techniques, systems, and arrangements are described herein which provide unique heat pipe fabrication techniques, whereby wettability of surfaces (hydrophilicity and hydrophobicity) of radio frequency (RF) compatible polymers may be modulated and controlled through a laser treatment. For example, using a femtosecond laser with a different dosage (a range of, for example, 50 J/cm2 to 100 J/cm2) in an evaporator portion of a heat pipe compared to the condenser portion of a heat pipe (a range of, for example, .25 J/cm2 to 45 J/cm2), polymers such as, for example, poly(methyl methacrylate) (PMMA) based polymers, polysulfone (PSF) based polymers, azobenzene, polytetrafluoroethylene, etc., may be chemically altered to have a different surface energy. Additionally, a different focus time of the femtosecond laser may be used in addition to, or instead of, the different dosages of laser energy.

公开(公告)号：EP4411302A1

公开(公告)日：2024-08-07

申请号：EP24152695.3

申请日：2024-01-18

申请人： SHINKO ELECTRIC INDUSTRIES CO., LTD.

发明人： Machida, Yoshihiro

IPC分类号： F28D15/04 ,  F28F3/08 ,  F28F21/08

CPC分类号： F28D15/043 ,  F28F3/086 ,  F28F21/08

摘要： An evaporator (21) includes a first metal layer (31) having a first inner surface (31A) and a first outer surface (31B), a second metal layer (32) having a second inner surface (32A) bonded to the first inner surface (31A) and a second outer surface (32B), and a porous body (21s) provided between the first outer surface (31B) and the second outer surface (32B). The porous body (21s) includes first bottomed holes (41) provided in the first inner surface (31A), second bottomed holes (51) provided in the second inner surface (32A), a fine pore (61), a first groove portion (42) provided in the first inner surface (31A), and a second groove portion (52) provided in the second inner surface (32A). The first groove portion (42) and the second groove portion (52) are provided not to overlap each other in a plan view. The first outer surface (31B) and the second outer surface (32B) serve as an outer surface of the evaporator (21).

公开(公告)号：EP4119882B1

公开(公告)日：2024-08-07

申请号：EP22183554.9

申请日：2022-07-07

IPC分类号： F28D15/02 ,  F28D15/04

CPC分类号： F28D15/043 ,  F28D15/046 ,  F28D15/0266 ,  F28D15/0233 ,  F28D2021/002920130101

公开(公告)号：EP3702884B1

公开(公告)日：2024-05-29

申请号：EP20163552.1

申请日：2015-04-07

IPC分类号： G06F1/20 ,  H05K7/20 ,  F28D15/02 ,  F28D15/04 ,  B22F3/11 ,  B22F10/20 ,  B33Y10/00 ,  B33Y80/00

CPC分类号： F28D15/0233 ,  F28D15/046 ,  G06F1/20 ,  G06F2200/20120130101 ,  H05K7/20672 ,  H05K7/20336 ,  B33Y80/00 ,  B33Y10/00 ,  B22F10/20 ,  B22F3/1103

公开(公告)号：EP4325155A1

公开(公告)日：2024-02-21

申请号：EP23190790.8

申请日：2023-08-10

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： MARIOTTO, Mathieu ,  CHAMPEL, Bénédicte ,  GRUSS, Jean-Antoine

IPC分类号： F28D15/02 ,  F28D15/04 ,  F28F1/16

摘要： L'invention concerne un caloduc (1) s'étendant le long d'une première direction longitudinale (X), comprenant une enceinte étanche (2) s'étendant entre une première extrémité longitudinale (3), destinée à être échauffée par une source chaude SC pour former, au sein de l'enceinte, un évaporateur (ZE) et une deuxième extrémité longitudinale (4) destinée à être refroidie par une source froide SF pour former un condenseur (ZC), l'enceinte étanche délimitant une zone adiabatique (ZA) entre l'évaporateur et le condenseur, l'évaporateur comprenant un canal vapeur (13), au moins un canal liquide (11) relié au canal vapeur en définissant au moins une interface liquide-vapeur (I), et une pluralité de montants (15) formant des piliers de conduction thermique qui s'étendent au moins dans le canal vapeur selon une deuxième direction (Y) orthogonale à (X), depuis une face latérale (21) de l'enceinte à partir de laquelle le flux provenant de la source chaude est appliqué, jusqu'à l'interface liquide-vapeur.

公开(公告)号：EP4325154A1

公开(公告)日：2024-02-21

申请号：EP22204443.0

申请日：2022-10-28

申请人： Beijing Xiaomi Mobile Software Co., Ltd.

发明人： CHEN, Anqi ,  HUANG, Duzi ,  LIU, Mingyan

IPC分类号： F28D15/02 ,  F28D15/04 ,  F28F3/12 ,  H05K7/20 ,  H01L23/36 ,  F28D21/00

摘要： A vapor chamber includes: a body (110) including an accommodating cavity (111); a wick structure layer (120) located in the accommodating cavity (111); and a wick structure channel (130) located in the accommodating cavity (111). The wick structure channel (130) is at least partially located outside the wick structure layer (120); or, the wick structure channel (130) is located in the wick structure layer (120), and fluid resistance of the wick structure channel (130) is smaller than fluid resistance of the wick structure layer (120).