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    METHOD FOR PRODUCTION OF BLOCK COPOLYMER
    93.
    发明公开
    METHOD FOR PRODUCTION OF BLOCK COPOLYMER 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES BLOCKCOPOLYMERS

    公开(公告)号：EP2112186A1

    公开(公告)日：2009-10-28

    申请号：EP08711237.1

    申请日：2008-02-14

    申请人： Sumitomo Chemical Company, Limited

    发明人： YOKOZAWA, Tsutomu ,  HIGASHIMURA, Hideyuki ,  TEMMA, Tomohisa

    IPC分类号： C08G61/12

    CPC分类号： C08G61/126 ,  C08G61/02 ,  C08G61/12 ,  C08G61/124 ,  C08G2261/126 ,  C08G2261/312 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/411 ,  C08G2261/417 ,  C09K11/06 ,  C09K2211/14 ,  H01L51/0039 ,  H01L51/0043

    摘要： Disclosed is a method for producing a block copolymer which comprises two or more blocks composed of aromatic units having different basic structures from each other and has a high molecular weight, a narrow chain length distribution and a narrow molecular weight distribution. Also disclosed is a block copolymer produced by the method. The method for producing a block copolymer comprises the step of sequentially reacting two or more aromatic compounds which are selected from aromatic compounds represented by a specific general formula and are different in the group Ar, in the presence of a nickel complex containing a phosphine compound represented by a specific general formula or a palladium complex containing a phosphine compound represented by a specific general formula to thereby form blocks comprising the aromatic compounds sequentially, wherein the two or more aromatic compounds are reacted in descending order of parameter of aromatic ring charge.

    摘要翻译： 公开了一种嵌段共聚物的制造方法，其包含两个以上由具有不同碱性结构的芳香族单元构成的嵌段，具有高分子量，窄链长度分布和窄分子量分布。 还公开了通过该方法制备的嵌段共聚物。 嵌段共聚物的制造方法包括在含有表示的膦化合物的镍配合物的存在下，使选自由特定通式表示的芳香族化合物与Ar组不同的两种以上的芳香族化合物顺序反应的工序 通过具体的通式或含有由特定通式表示的膦化合物的钯络合物，从而依次形成包含芳香族化合物的嵌段，其中两种或更多种芳香族化合物按芳香族环电荷参数的降序进行反应。

    Light emitting material, method of manufacturing the light emitting material and method of manufacturing light emitting layer
    100.
    发明公开
    Light emitting material, method of manufacturing the light emitting material and method of manufacturing light emitting layer 审中-公开
    Lichtemittierendes材料，Herstellungsmethode und Methode zur Herstellung einer lichtemittierenden Schicht

    公开(公告)号：EP1484382A1

    公开(公告)日：2004-12-08

    申请号：EP04253062.6

    申请日：2004-05-25

    申请人： SEIKO EPSON CORPORATION

    发明人： Shinohara, Takashi c/o Seiko Epson Corporation ,  Shinohara, Yuji c/o Seiko Epson Corporation ,  Uehara, Masamitsu c/o Seiko Epson Corporation ,  Shimazu, Masamitsu c/o Seiko Epson Corporation ,  Ishii, Ryuji c/o Seiko Epson Corporation

    IPC分类号： C09K11/06 ,  H05B33/14

    CPC分类号： H01L51/0025 ,  C09K11/06 ,  C09K2211/14 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

    摘要： In an organic EL device 1, when a voltage is applied across an anode 3 and a cathode 5, holes are moved in a hole transport layer 41 and electrons are moved in an electron transport layer 43, and the holes and the electrons are recombined in a light emitting layer 42 to emit light. A light emitting material is used to form the light emitting layer 42. When the light emitting layer 42 is formed using the light emitting material, the light emitting layer contains one or more kinds of metallic impurities, but an amount of a metallic impurity of which content is the largest among the metallic impurities contained in the layer is 2.5 ppm or less, or when the light emitting material is dissolved in a liquid so that the concentration thereof becomes 2.0 wt%, the liquid contains one or more kinds of metallic impurities, but an amount of the metallic impurity of which content is the largest among the metallic impurities contained in the liquid is 50 ppb or less. By using such a light emitting material, the decrease of light-emission luminance of the organic EL device 1 can be suppressed.

    摘要翻译： 在有机EL器件1中，当跨越阳极3和阴极5施加电压时，空穴在空穴传输层41中移动，并且电子在电子传输层43中移动，并且空穴和电子在 用于发光的发光层42。 使用发光材料来形成发光层42.当使用发光材料形成发光层42时，发光层含有一种或多种金属杂质，但是金属杂质的量 在该层中含有的金属杂质的含量最大为2.5ppm以下，或者当发光材料溶解在液体中使其浓度为2.0重量％时，液体含有一种或多种金属杂质， 但是在液体中含有的金属杂质中的含量最多的金属杂质的量为50ppb以下。 通过使用这样的发光材料，可以抑制有机EL元件1的发光亮度的降低。