摘要:
A method of THz photon generation comprising: providing a magnon gain medium; wherein the magnon gain medium supports generation of nonequilibrium magnons; and injecting nonequilibrium electrons into the magnon gain medium. Propagation of nonequilibrium electrons in the magnon gain medium causes generation of nonequilibrium magnons. Interaction between nonequilibrium magnons causes generation of THz photons.
摘要:
A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first (12) and second (13) semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.
摘要:
The present invention improves the efficiency of conversion from a non-radiation two-dimensional electron plasmon wave into a radiation electromagnetic wave, and realizes a wide-band characteristic. A terahertz electromagnetic wave radiation element of the present invention comprises a semiinsulating semiconductor bulk layer, a two-dimensional electron layer formed directly above the semiconductor bulk layer by a semiconductor heterojunction structure, source and drain electrodes electrically connected to two opposed sides of the two-dimensional electron layer, a double gate electrode grating which is provided in the vicinity of and parallel to the upper surface of the two-dimensional electron layer and for which two different dc bias potentials can be alternately set, and a transparent metal mirror provided in contact with the lower surface of the semiconductor bulk layer, formed into a film shape, functioning as a reflecting mirror in the terahertz band, and being transparent in the light wave band. Two light waves are caused to enter from the lower surface of the transparent metal mirror, and two different dc bias potentials are alternately applied to the double gate electrode grating so as to periodically modulate the electron density of the two-dimensional electron layer in accordance with the configuration of the double gate electrode grating.
摘要:
Method for generating coherent electromagnetic radiation of a frequency comprised between 1 GHz and 10 THz consisting of using a sample made up of a crystalline or polycrystalline molecular magnet possessing energy levels on both sides of the magnetic anisotropy barrier, the method comprising:
subjecting the sample to a magnetic field and to a temperature in which the material displays magnetic hysteresis phenomena, varying the magnetic field as a function of time in such a way that it provokes a phenomenon of thermal or electromagnetic avalanche which produces a population inversion, and emitting coherent electromagnetic radiation with wavelengths λ. The device comprises:
a housing (3) for the sample, a generator device (2) of a magnetic field variable as a function of time, means for maintaining said sample (1) at a temperature at which the material displays magnetic hysteresis phenomena in a magnetic field, a temperature probe (5), and an electromagnetic radiation detector (4).
摘要:
The invention relates to a device for generating terahertz (THz) radiation comprising a short pulse laser (1) with mode coupling to which a pump beam (3) is supplied, and comprising a semiconductor component equipped with a resonator mirror (M4). This semiconductor component serves to derive the THz radiation based on incident laser pulses. The resonator mirror (M4), preferably a resonator end mirror, is provided with a semiconductor layer (8), which is partially transparent to the laser radiation of the short pulse laser (1), whose absorption edge is lower than the energy of the laser radiation of the short pulse laser (1), and on which the electrodes (9, 10) that can be connected to a bias voltage source are placed in order to generate and radiate the THz radiation in the electric field.
摘要:
Optically pumped maser are described. The devices are useful for microwave amplification, microwave phase shifting and microwave limiting function. The devices are based on electron spin polarization of a stable free radical species induced by an intermolecular energy transfer process acting via a photo induced radical triplet pair mechanism. A radical triplet precursor chromophore in a matrix with the stable free radical species is irradiated, preferably using a pulsed laser to initiate the process with concomitant increase in matrix magnetic susceptibility. Microwave radiation incident on the photo activated matrix is reflected as amplified, phase shifted or limited microwave fields dependent on relevant device parameters and on the power of the incident microwave radiation.
摘要:
Optical system architectures with improved spatial resolution are provided in which the radiation useful for THz spectroscopy and other investigative procedures can be directionally coupled, in a highly efficient manner, into and out of photoconductive structures such, for example, as dipole antennas. An optical system constructed in accordance with an illustrative embodiment of the present invention comprises a source for emitting radiation in a range of frequencies within from 100 GHz to 20 THz, a coupling lens structure for coupling radiation emitted by said source into free space, at least one collimating optical element for collimating received coupled radiation into a beam having a substantially frequency independent diameter and substantially no wavefront curvature, and a detector for detecting the beam collimated by the at least one collimating optical element. In an optical system constructed in accordance with another embodiment of the present invention, a modified substrate lens structure is used and the collimating optical element is replaced by at least one optical element that focuses received coupled radiation onto a diffraction limited focal spot on or within the medium under investigation.
摘要:
A terahertz optical emission device comprises a substrate (3) with first and second electrodes (1, 2) one overlying the other with LT-GaAs dielectric material between them. When a femtosecond laser pulse is applied, terahertz radiation is produced in the plane of the substrate. A corresponding terahertz radiation detector is disclosed, together with a sensor system which uses an emitter and detector for detecting and sensing an operational parameter of a system under test.