公开(公告)号：EP0316909A2

公开(公告)日：1989-05-24

申请号：EP88119130.8

申请日：1988-11-17

申请人： HITACHI, LTD.

发明人： Migita, Masahito ,  Uda, Tsuyoshi ,  Kanehisa, Osam ,  Shiiki, Masatoshi

IPC分类号： H01L31/02 ,  G11C13/04

CPC分类号： B82Y20/00 ,  G11C7/005 ,  H01L31/035236

摘要： A semiconductor optical apparatus of the invention has a quantum well super-lattice structure consisting of only a direct transition semiconductor or both of a direct transition semiconductor and an indirect transition semiconductor. In the semicondcutor optical apparatus of the invention, by using an absorp­tion saturation phenomenon of excitons in the direct transition semiconductor constructing the quantum well super-lattice structure, a non-volatile information recording apparatus which can record, reproduce, and erase informatin at a high speed even at the room temperature or even by irradiating a light of a low intensity is realized.

摘要翻译： 本发明的半导体光学装置具有仅由直接跃迁半导体或直接跃迁半导体和间接跃迁半导体两者组成的量子阱超晶格结构。 在本发明的半切割光学装置中，通过在构成量子阱超晶格结构的直接跃迁半导体中使用激子的吸收饱和现象，能够高速记录，再现和擦除信息的非易失性信息记录装置 即使在室温下甚至通过照射低强度的光也能实现。