摘要:
A semiconductor optical apparatus of the invention has a quantum well super-lattice structure consisting of only a direct transition semiconductor or both of a direct transition semiconductor and an indirect transition semiconductor. In the semicondcutor optical apparatus of the invention, by using an absorption saturation phenomenon of excitons in the direct transition semiconductor constructing the quantum well super-lattice structure, a non-volatile information recording apparatus which can record, reproduce, and erase informatin at a high speed even at the room temperature or even by irradiating a light of a low intensity is realized.
摘要:
A semiconductor emitting device capable of emitting blue light comprises a first clad layer (20), an active layer (21) and a second clad layer (22), successively formed on a semiconductor substrate (15), where a nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ and a resistivity of not more than 10 Ω-cm is used as the first or the second clad layer (20, 22).
摘要:
A multi-color single layer electroluminescent display apparatus comprising a illuminant layer (27) having been interposed between a pair of electrode layers (28) and having a plurality of activators doped at spacially differ ent locations is disclosed. A process for producing an electroluminescent display apparatus comprising doping with a plurality of activators at spacially different locations on forming a illuminant layer is also disclosed.
摘要:
In an operation of an address period for addressing cells of a display device, such as a plasma display panel, comprising a plurality of cells of three kinds, red (R), green (G), blue (B), which are arranged on a plane for forming a display surface thereof, in which each of said cells comprising: a pair of transparent electrodes provided in parallel to each other; an address electrode being positioned opposing the pair of transparent electrodes; luminescence medium provided on the address electrode; and a discharge space being defined between the pair of transparent electrodes and said fluorescence medium on the address electrode, wherein the address discharge is conducted by applying an address voltage to the address electrode, and the address voltage applied is determined depending upon the each kind of the cells, R, G and B.
摘要:
In an operation of an address period for addressing cells of a display device, such as a plasma display panel, comprising a plurality of cells of three kinds, red (R), green (G), blue (B), which are arranged on a plane for forming a display surface thereof, in which each of said cells comprising: a pair of transparent electrodes provided in parallel to each other; an address electrode being positioned opposing the pair of transparent electrodes; luminescence medium provided on the address electrode; and a discharge space being defined between the pair of transparent electrodes and said fluorescence medium on the address electrode, wherein the address discharge is conducted by applying an address voltage to the address electrode, and the address voltage applied is determined depending upon the each kind of the cells, R, G and B.
摘要:
A semiconductor emitting device capable of emitting blue light comprises a first clad layer (20), an active layer (21) and a second clad layer (22), successively formed on a semiconductor substrate (15), where a nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ and a resistivity of not more than 10 Ω-cm is used as the first or the second clad layer (20, 22).
摘要翻译:能够发射蓝光的半导体发射器件包括依次形成在半导体衬底(15)上的第一覆盖层(20),有源层(21)和第二覆盖层(22) 作为载流子浓度不小于1×10 6 cm -3的低电阻率ZnSe型ZnSSe薄膜,电阻率不大于10ΩEGA-cm作为第一或第 第二包层(20,22)。