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    SOLID-STATE IMAGING DEVICE
    11.
    发明公开
    SOLID-STATE IMAGING DEVICE 审中-公开
    FESTKÖRPERBILDGEBUNGSVORRICHTUNG

    公开(公告)号：EP3145178A1

    公开(公告)日：2017-03-22

    申请号：EP15793280.7

    申请日：2015-04-07

    申请人： Hamamatsu Photonics K.K.

    发明人： SUGIYAMA, Yukinobu ,  ENDO, Kenta

    IPC分类号： H04N5/376 ,  H04N5/341 ,  H04N5/353 ,  H04N5/374

    CPC分类号： H04N5/355 ,  H04N5/341 ,  H04N5/347 ,  H04N5/353 ,  H04N5/3535 ,  H04N5/35554 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/378

    摘要： A solid-state imaging device includes a photodetecting unit, a row control unit, a column control unit, and a signal readout unit. The photodetecting unit includes M×N pixel units P(1,1) to P(M,N) two-dimensionally arrayed in M rows and N columns. Each pixel unit P(m,n) includes a photodiode PD, an amplifying transistor Tr1, a transfer transistor Tr2, a readout transistor Tr3, a first initialization transistor Tr4, and a second initialization transistor Tr5. One of the transfer transistor Tr2 and the first initialization transistor Tr4 performs an on/off operation based on a control signal output from the row control unit, and the other performs an on/off operation based on a control signal output from the column control unit. Thus, a solid-state imaging device capable of setting an accumulation period of various patterns different for each pixel is realized.

    摘要翻译： 固态成像装置包括光检测单元，行控单元，列控制单元和信号读出单元。 光检测单元包括以M行N列二维排列的M×N个像素单位P（1,1）〜P（M，N）。 每个像素单元P（m，n）包括光电二极管PD，放大晶体管Tr1，转移晶体管Tr2，读出晶体管Tr3，第一初始化晶体管Tr4和第二初始化晶体管Tr5。 传输晶体管Tr2和第一初始化晶体管Tr4中的一个基于从行控单元输出的控制信号执行开/关操作，另一个基于从列控制单元输出的控制信号执行开/关操作 。 因此，能够实现能够设定各像素的各种图案的累积期间的固态成像装置。

    SOLID-STATE IMAGING DEVICE
    12.
    发明授权
    SOLID-STATE IMAGING DEVICE 有权
    TUBE LOOSE图DEVICE

    公开(公告)号：EP2012529B1

    公开(公告)日：2016-05-25

    申请号：EP07742173.3

    申请日：2007-04-23

    申请人： Hamamatsu Photonics K.K.

    发明人： SUGIYAMA, Yukinobu ,  MIZUNO, Seiichiro

    IPC分类号： H04N3/14 ,  H04N5/235 ,  H04N5/341 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/335

    CPC分类号： H04N5/335 ,  H01L27/14609 ,  H04N5/2351 ,  H04N5/32 ,  H04N5/341 ,  H04N5/3745

    摘要： The solid-state image pickup device 1 includes an imaging region 10, a triggering photosensitive region 20, a row selecting section 30, a column selecting section 40, a voltage holding section 50, an output section 60, and a controlling section 70. The solid-state image pickup device 1 reads out triggering data by the triggering photosensitive region 20, the integrating circuit 62, and the triggering A/D converting circuit 64 before light incidence, and senses the light incidence on the basis of the triggering data. After the solid-state image pickup device senses the light incidence, the solid-state image pickup device reads out pixel data by the imaging region 10, the voltage holding section 50, a differential operating circuit 61, and an imaging A/D converting circuit 63.

    SOLID-STATE IMAGING DEVICE
    15.
    发明公开
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号：EP2579580A1

    公开(公告)日：2013-04-10

    申请号：EP11786777.0

    申请日：2011-05-27

    申请人： Hamamatsu Photonics K.K.

    发明人： SUGIYAMA, Yukinobu ,  JOBOJI, Tasuku

    IPC分类号： H04N5/374 ,  H04N5/341

    CPC分类号： H04N5/3742 ,  H04B10/11 ,  H04N5/343 ,  H04N5/3454

    摘要： A solid-state imaging device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, and the like. The first row selecting section 20 causes each pixel unit of any m1-th row in the light receiving section 10 to discharge a junction capacitance section of a photodiode, and to output data corresponding to an amount of charge generated in the photodiode to a readout signal line L1 n . The second row selecting section 30 causes each pixel unit of any m2-th row in the light receiving section 10 to discharge a junction capacitance section of a photodiode, and to output data corresponding to an amount of charge generated in the photodiode to a readout signal line L2 n . The solid-state imaging device 1 causes each pixel unit of any m3-th row in the light receiving section 10 to discharge a junction capacitance section of a photodiode, and to accumulate charge generated in the photodiode in a charge accumulating section. m1 and m2 are different from each other.

    摘要翻译： 固态成像装置1包括光接收部分10，第一行选择部分20，第二行选择部分30等。 第一行选择部分20使光接收部分10中的任何第m1行的每个像素单元放电光电二极管的结电容部分，并且将与在光电二极管中产生的电荷量相对应的数据输出到读出信号 线L1n。 第二行选择部30使受光部10中的第m2行的各像素单元对光电二极管的接合电容部进行放电，并将与光电二极管中产生的电荷量对应的数据输出到读出信号 行L2n。 固态成像装置1使得光接收部10中的任意第m3行的每个像素单元对光电二极管的结电容部进行放电，并将在光电二极管中产生的电荷累积在电荷累积部中。 m1和m2彼此不同。