摘要:
In illustrative implementations, a set of separate modulation signals simultaneously modulates a plurality of pixels in a superpixel by a set of separate modulation signals, such that each pixel in the superpixel is modulated by a modulation signal that causes sensitivity of the pixel to vary over time. Each superpixel comprises multiple pixels. In some implementations, the sensitivity of a pixel to incident light is controlled by storage modulation or by light modulation. In some implementations, this invention is used for 3D scanning, i.e., for detection of the 3D position of points in a scene.
摘要:
The radiation detector according to one embodiment of the present invention is provided with: a substrate; a plurality of control lines which are disposed on the substrate, and which extend in a first direction; a plurality of data lines which are disposed on the substrate, and which extend in a second direction that intersects with the first direction; photoelectric conversion units each of which disposed in one of areas segmented by the plurality of control lines and the plurality of data lines, and each of which having a photo - electric conversion element and a thin-film transistor that is electrically connected to a corresponding one of the control lines and a corresponding one of the data lines; a control circuit which is electrically connected to the plurality of control lines, and which switches the plurality of thin-film transistors between ON state and OFF state; a signal detection circuit which is electrically connected to the plurality of data lines; a reference potential unit which is electrically connected to the signal detection circuit; and a determination unit which is electrically connected to the signal detection unit. When the thin-film transistors are in OFF state, the signal detection unit detects a first current integration value via the data lines, and also detects a second current integration value from the reference potential unit. The determination unit determines a start time for radiation incidence on the basis of the difference between the detected first current integration value and the detected second current integration value.
摘要:
An image sensor comprising a substrate that includes a plurality of photodiodes and a shutter trigger contact is disclosed. The plurality of photodiodes collectively define at least part of a pixel area parallel to a surface of the substrate. The shutter trigger contact is coupled to provide a common shutter trigger signal to the plurality of photodiodes and includes a contiguous conductive region disposed on the substrate substantially coextensively with the pixel area.
摘要:
An image-capturing device includes an electronic shutter, a mechanical shutter, an assessing part, and an electronic shutter control part. The assessing part is configured to measure length of a first exposure time of a first photoelectric conversion element to the light and length of a second exposure time of a second photoelectric conversion element to the light. The electronic shutter control part is configured to control the electronic shutter to start exposing the first photoelectric conversion element to the light at a first exposure-start timing and control the electronic shutter to start exposing the second photoelectric conversion element to the light at a second exposure-start timing in order to make the first exposure time to be substantially same to the second exposure time, if either the first or second exposure time is less than a threshold value.
摘要:
A photographing apparatus for preventing or reducing light leakage and an image sensor thereof are provided. The photographing apparatus includes an image sensor configured to include a plurality of pixels respectively having a Photo Diode and a Storage Diode for temporarily storing a charge accumulated in the Photo Diode and an image processor configured to perform an image processing operation by receiving the charge stored in the Storage Diode of each of the plurality of pixels. In addition, the image sensor has a structure where the Storage Diodes of the plurality of pixels are arrayed to be adjacent to each other. Accordingly, the photographing apparatus may prevent the light leakage from the adjacent pixel being flowed into a Storage Diode of each pixel.
摘要:
Provided is a method for driving a solid-state imaging device (1000) including a unit pixel which includes: a photoelectric converter which receives reflected light from an object (600) and converts the reflected light into charge; a charge discharger which discharges the charge of the photoelectric converter; an exposure resetter which switches timing for accumulating the charge in the photoelectric converter and timing for discharging the charge from the photoelectric converter to the charge discharger; n charge accumulators which accumulate the charge where n is a natural number; and n readers which read the charge where n is a natural number. The method includes performing an exposure sequence including: an exposure start step of starting exposure of the photoelectric converter by placing the exposure resetter in a non-conducting state after the lapse of a predetermined period of time starting from the readers are placed in a conducting state; and an exposure stop step of stopping the exposure of the photoelectric converter by placing the exposure resetter in the conducting state a predetermined period of time before placing the readers in the non-conducting state after the exposure is started.
摘要:
A plurality of pixels (50A) of a solid-state imaging device (100) include: a photoelectric converter (1A) which receives light from an object and converts the light into charge; an exposure controller (6A) which switches between accumulation of the charge into the photoelectric converter (1A) and discharge of the charge from the photoelectric converter (1A); two readers (9A1 and 9A2) which read the charge from the photoelectric converter (1A); two charge accumulators (2A2 and 3A1) which accumulate the charge of the photoelectric converter (1A); and distributors (7A1 and 7A2) which distribute the charge from the photoelectric converter (1A) to one of the two charge accumulators (2A2 and 3A1).
摘要:
Disclosed is an image sensor. The image sensor comprises a photosensitive unit array, a filter unit array, and multiple converting units. The filter unit array is arranged on the photosensitive unit array. Each filter unit covers corresponding one photosensitive unit. The photosensitive units comprise multiple photosensitive pixels. The converting units comprise at least two source followers. At least one source follower is connected to the multiple photosensitive pixels. Also disclosed are a control method and an electronic device. The image sensor of embodiments of the present invention, where a same filter unit corresponds to the multiple photosensitive pixels and at least one source follower is connected to the multiple photosensitive pixels, compared with single photosensitive pixel output, is capable of acquiring an increased amount of photo-generated charge, thus not only increasing sensitivity and signal-to-noise ratio by means of hardware improvement, but also allowing composition of high dynamic range images by means of controlling output and reading of photosensitive pixel exposure.
摘要:
An electronic device, includes an input unit that inputs image data generated by an imaging unit that has a plurality of imaging regions with imaging conditions being different for each of the imaging regions, and data of the imaging conditions for each of the imaging regions; and an image processing unit that performs image processing upon the image data inputted from the input unit based on the imaging conditions for each of the imaging regions.
摘要:
There is set forth herein in one embodiment an image sensor array including a global shutter shared by first and second pixels. The global shutter can include a charge storage area having an associated shield for reducing charge build up on the charge storage area attributable to incident light rays. There is set forth herein in one embodiment an imaging apparatus having one or more configuration. The one or more configuration can include one or more of a configuration wherein a frame read out from an image sensor array has unbinned pixel values, a configuration wherein a frame read out from an image sensor array has binned pixel values corresponding to an MxN, M>=2, N>=2 arrangement of pixel values, and a configuration wherein a frame read out from an image sensor array has binned pixel values corresponding to a 1xN, N>=2 arrangement of pixel values.