公开(公告)号：EP0967644A2

公开(公告)日：1999-12-29

申请号：EP99304812.3

申请日：1999-06-18

申请人： SIEMENS AKTIENGESELLSCHAFT ,  International Business Machines Corporation

发明人： Schrems, Martin ,  Mandelman, Jack ,  Hoepfener, Joachim ,  Schaefer, Herbert ,  Stengl, Reinhard

IPC分类号： H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10861 ,  H01L29/945

摘要： A bottle-shaped trench capacitor having an expanded lower trench portion with an epi layer therein. The epi layer serves as the buried plate of the trench capacitor. A diffusion region surrounds the expanded lower trench portion to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation.

摘要翻译： 一种瓶形沟槽电容器，其具有在其中具有外延层的扩展的下沟槽部分。 外延层用作沟槽电容器的掩埋板。 扩散区围绕扩展的下沟槽部分以增强外延层的掺杂剂浓度。 扩散区通过例如气相掺杂，等离子体掺杂或等离子体浸入离子注入形成。

公开(公告)号：EP0967644A3

公开(公告)日：2003-07-02

申请号：EP99304812.3

申请日：1999-06-18

申请人： SIEMENS AKTIENGESELLSCHAFT ,  International Business Machines Corporation

发明人： Schrems, Martin ,  Mandelman, Jack ,  Hoepfner, Joachim ,  Schaefer, Herbert ,  Stengl, Reinhard

IPC分类号： H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10861 ,  H01L29/945

摘要： A bottle-shaped trench capacitor (310) having an expanded lower trench portion with an epi layer (365) therein. The epi layer serves as the buried plate of the trench capacitor. A diffusion region (367) surrounds the expanded lower trench portion to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation.

公开(公告)号：EP0967653A2

公开(公告)日：1999-12-29

申请号：EP99304810.7

申请日：1999-06-18

申请人： SIEMENS AKTIENGESELLSCHAFT ,  International Business Machines Corporation

发明人： Schrems, Martin ,  Schaefer, Herbert ,  Mandelman, Jack ,  Stengl, Reinhard ,  Hoepner, Joachim

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/10861 ,  H01L29/945

摘要： A trench capacitor with an epi layer in the lower portion of the trench. The epi layer serves as the buried plate of the trench capacitor. A diffusion region surrounds the lower portion of the trench to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation.

摘要翻译： 在沟槽的下部具有外延层的沟槽电容器。 外延层用作沟槽电容器的掩埋板。 扩散区域围绕沟槽的下部以增强外延层的掺杂剂浓度。 扩散区通过例如气相掺杂，等离子体掺杂或等离子体浸入离子注入形成。