摘要:
A tip of a probe is sharpened and a level difference portion 6 in a boundary zone between a base portion 5 and an elastic functioning portion 4 is formed into a tapered configuration. The diameter of the elastic functioning portion 4 is made smaller than that of the base portion 5. Also, a part of the elastic functioning portion 4 is shaped into a constricted configuration. Also, the probe material is an optical fiber and this probe is composed of a core portion 2 that propagates light therethrough and clad portions 3 that differ in refractive index from each other. And the portion of the probe that excludes a aperture is clothed by a metal film cladding 7.
摘要:
An optical pumping field emission type light-to-current converter is constructed by joining an optical wave guide material (1) through which light is propagated, a conductive transparent film (2), a semiconductor material or an insulating material (3), and a conductor material (4) to each other. The optical wave guide material may have a needle-like shape (6) which is obtained by sharpening the light emission guide side thereof. Thereby is obtained an optical pumping field emission type light-to-current converter having a simplified structure high sensitivity and high-speed response on the order of picoseconds (10 -12 seconds) due to a large field emission current.
摘要:
In a combined scanning near field optical microscope (Nsom) and atomic force microscope (AFM), an optical fibre probe (1) which has a minute opening on the top of a sharpened tip is brought close to a sample (2), and the probe is moved by a piezo actuator (15) along x- and y-axis directions so that a minute spot beam emanating from the minute opening can scan over the sample. For circular polarisation modulation to be incorporated in the process, a beam is given an optical delay, before it is incident on the optical fibre probe (1), changing at a frequency of p (Hz) by means of a piezo-optical modulator (10). A minute spot beam emanating from the minute opening passes through the sample (2) to be received after passage through the sample (2) to be received after passage through an analyser (5) by a light receiving element (7). The output from the light receiving element (7) is fed to a lock-in amplifier, p- and 2p-components are separated through lock-in rectification, and they are rendered into images by a controller (16). It is used for measuring the distribution of magneto-optical effects.
摘要:
In a combined scanning near field optical microscope (Nsom) and atomic force microscope (AFM), an optical fibre probe (1) which has a minute opening on the top of a sharpened tip is brought close to a sample (2), and the probe is moved by a piezo actuator (15) along x- and y-axis directions so that a minute spot beam emanating from the minute opening can scan over the sample. For circular polarisation modulation to be incorporated in the process, a beam is given an optical delay, before it is incident on the optical fibre probe (1), changing at a frequency of p (Hz) by means of a piezo-optical modulator (10). A minute spot beam emanating from the minute opening passes through the sample (2) to be received after passage through the sample (2) to be received after passage through an analyser (5) by a light receiving element (7). The output from the light receiving element (7) is fed to a lock-in amplifier, p- and 2p-components are separated through lock-in rectification, and they are rendered into images by a controller (16). It is used for measuring the distribution of magneto-optical effects.
摘要:
The present invention provides an X-ray analysing apparatus having high sensitivity and high position resolving power in which an X-ray fluorescent screen (48) including Gd₂O₂S : Tb as a material and having a surface density ranging from 5 mg/cm² to 30 mg/cm² is used, and an image intensifier (50) and a charge coupled device (CCD) (52) are combined to construct an X-ray diffraction two-dimensional detector; and also an image intensifier tube and the CCD are combined with a tapered fibre plate (49), and an alignment section of the mirror mount tube and a vacuum flexible tube are separated by an X-ray window into the atmosphere and the vacuum.
摘要:
There is provided a near-field optical memory head for recording and/or reproducing information on a recording medium by utilizing near-field light which is a near-field optical memory head having a compact constitution and is suitable for mass production and array formation. According to the near-field optical memory head 11, in a planar substrate formed by penetrating at least one hole in a shape of an inverted pyramid such that a top portion thereof constitutes a very small aperture 4, a near-field light forming system for forming near-field light at a recording medium 1 and a near-field light detecting system for guiding propagating light 10 provided by interactively operating the formed near-field light with the very small aperture 4 to a light detecting element are integrated.
摘要:
An optical pumping field emission type light-to-current converter is constructed by joining an optical wave guide material (1) through which light is propagated, a conductive transparent film (2), a semiconductor material or an insulating material (3), and a conductor material (4) to each other. The optical wave guide material may have a needle-like shape (6) which is obtained by sharpening the light emission guide side thereof. Thereby is obtained an optical pumping field emission type light-to-current converter having a simplified structure high sensitivity and high-speed response on the order of picoseconds (10 -12 seconds) due to a large field emission current.
摘要:
A semiconductor substrate and a light-valve semiconductor substrate is provided so as to prevent the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing in order to obtain a MOS integrated circuit with a high reliability even for over a long time of operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.