公开(公告)号：EP1353369A3

公开(公告)日：2004-05-06

申请号：EP03251430.9

申请日：2003-03-10

申请人： SHARP KABUSHIKI KAISHA

发明人： Evans, David Russell ,  Hsu, Sheng Teng ,  Ulrich, Bruce Dale ,  Tweet, Douglas James ,  Stecker, Lisa H.

IPC分类号： H01L21/762

CPC分类号： H01L21/28194 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/517 ,  H01L29/518 ,  Y10S438/975

摘要： The present invention provides a method for producing a semiconductor device using a self-aligned shallow trench isolation process isolating elements formed so as to be self-aligned to a gate structure, the method comprising the steps of: providing a first polysilicon layer overlying a gate insulator layer on a substrate; forming a trench through the first polysilicon layer, and into the substrate; providing an oxide layer overlying the substrate including the trench such that a top surface of the oxide layer within the trench is higher than a bottom surface of the first polysilicon layer; providing a second polysilicon layer overlying the oxide layer such that a top surface of the second polysilicon layer within the trench is lower than the top surface of the first polysilicon layer; and planarizing the second polysilicon layer, the oxide layer, and the first polysilicon layer, while stopping the step of planarizing at the top surface of the second polysilicon layer within the trench.

公开(公告)号：EP1308993A2

公开(公告)日：2003-05-07

申请号：EP02024051.1

申请日：2002-10-28

申请人： Sharp Kabushiki Kaisha

发明人： Li, Tingkai ,  Hsu, Sheng Teng ,  Ulrich, Bruce Dale ,  Horn Stecker, Lisa

IPC分类号： H01L21/28 ,  H01L29/78

CPC分类号： H01L21/28185 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/28194 ,  H01L21/28291 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/56 ,  H01L29/40 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517

摘要： A method of fabricating a memory device includes preparing a silicon substrate; depositing a layer of high-k insulator on the silicon substrate; depositing a buffering layer on the high-k insulating layer; depositing a layer of ferroelectric material on the buffering layer by metal organic chemical vapor deposition; forming a top electrode on the layer of ferroelectric material; and completing the device obtained by above steps.

摘要翻译： 一种制造存储器件的方法包括：制备硅衬底; 在硅衬底上沉积高k绝缘体层; 在高k绝缘层上沉积缓冲层; 通过金属有机化学气相沉积在缓冲层上沉积一层铁电材料; 在铁电材料层上形成顶部电极; 并完成通过上述步骤获得的装置。