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31 条记录 (耗时 0.013 秒)

    LED UNIT FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME
    11.
    发明公开
    LED UNIT FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME 审中-公开

    公开(公告)号：EP3913669A1

    公开(公告)日：2021-11-24

    申请号：EP21182984.1

    申请日：2018-11-27

    申请人： Seoul Viosys Co., Ltd

    发明人： CHAE, Jong Hyeon ,  LEE, Chung Hoon ,  JANG, Seong Gyu ,  KIM, Chang Yeon ,  LEE, Ho Joon

    IPC分类号： H01L25/075 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/00

    摘要： A light emitting diode (LED) stack for a display includes a first LED sub-unit having a first surface and a second surface, a second LED sub-unit disposed on the first surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a reflective electrode disposed on the second side of the second LED sub-unit and forming ohmic contact with the first LED sub-unit, and an ohmic electrode interposed between the first LED sub-unit and the second LED sub-unit and forming ohmic contact with the first LED sub-unit, in which the second LED sub-unit and the third LED sub-unit are configured to transmit light generated from the first LED sub-unit, and the third LED sub-unit is configured to transmit light generated from the second LED sub-unit.

    LIGHT EMITTING DIODE
    16.
    发明公开
    LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：EP3926698A1

    公开(公告)日：2021-12-22

    申请号：EP21185027.6

    申请日：2012-09-14

    申请人： Seoul Viosys Co., Ltd.

    发明人： CHAE, Jong Hyeon ,  JANG, Jong Min ,  ROH, Won Young ,  SUH, Dae Woong ,  CHO, Dae Sung ,  LEE, Joon Sup ,  LEE, Kyu Ho ,  IN, Chi Hyun

    IPC分类号： H01L33/36 ,  H01L33/22 ,  H01L33/40 ,  H01L33/08 ,  H01L33/20

    摘要： The invention relates to a a light emitting diode. A light emitting structure comprises a first conductivity type semiconductor layer (110), an active layer (120) and a second conductivity type semiconductor layer (130). Mesa-etched areas (150) are formed from the surface of the second conductivity type semiconductor layer (130) to the first conductivity type semiconductor layer (110). A reflective electrode (140) is formed on the second conductivity type semiconductor layer (130) and includes a reflective metal layer (142), a barrier metal layer (144) and a stress relieving layer (143) formed between the reflective metal layer (142) and the barrier metal layer (144), wherein the stress relieving layer (143) has a coefficient of thermal expansion between the coefficient of thermal expansion of the reflective metal layer (142) and the coefficient of thermal expansion of the barrier metal layer (144). A lower insulation layer (200) covers an overall surface of the structure formed by the first conductivity type semiconductor layer (110), the active layer (120), the second conductivity type semiconductor layer (130), the mesa-etched areas (150) and the reflective electrode (140), with the lower insulation layer (200) allowing an upper surface of the reflective electrode (140) to be partially exposed therethrough and further allowing the surface of the first conductivity type semiconductor layer (110) to be exposed therethrough in the mesa-etched areas (150). A current spreading layer (210) is formed on the lower insulation layer (200) covering the first conductivity type semiconductor layer (110) and is electrically connected to the first conductivity type semiconductor layer (110). An upper insulation layer (220) is formed on the current spreading layer (210), with both the current spreading layer (210) and the reflective electrode (140) being partially exposed through the upper insulation layer (220). A first pad (230) is electrically connected to the current spreading layer (210) exposed through the upper insulation layer (220), and a second pad (240) is electrically connected to the reflective electrode (140) exposed through the upper insulation layer (220).

    LED UNIT FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME
    17.
    发明公开
    LED UNIT FOR DISPLAY AND DISPLAY APPARATUS HAVING THE SAME 审中-公开

    公开(公告)号：EP3923328A1

    公开(公告)日：2021-12-15

    申请号：EP21182996.5

    申请日：2018-11-27

    申请人： Seoul Viosys Co., Ltd

    发明人： CHAE, Jong Hyeon ,  LEE, Chung Hoon ,  JANG, Seong Gyu ,  KIM, Chang Yeon ,  LEE, Ho Joon

    IPC分类号： H01L25/075 ,  H01L33/46 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

    摘要： A light emitting diode (LED) stack for a display includes a first LED sub-unit having a first surface and a second surface, a second LED sub-unit disposed on the first surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a reflective electrode disposed on the second side of the second LED sub-unit and forming ohmic contact with the first LED sub-unit, and an ohmic electrode interposed between the first LED sub-unit and the second LED sub-unit and forming ohmic contact with the first LED sub-unit, in which the second LED sub-unit and the third LED sub-unit are configured to transmit light generated from the first LED sub-unit, and the third LED sub-unit is configured to transmit light generated from the second LED sub-unit.

    LIGHT-EMITTING DIODE
    18.
    发明公开
    LIGHT-EMITTING DIODE 审中-公开

    公开(公告)号：EP3876294A1

    公开(公告)日：2021-09-08

    申请号：EP19880003.9

    申请日：2019-11-01

    申请人： Seoul Viosys Co., Ltd

    发明人： JANG, Seong Kyu ,  SHIN, Chan Seob ,  LEE, Seom Geun ,  LEE, Ho Joon ,  CHAE, Jong Hyeon

    IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/24 ,  H01L27/15

    摘要： A light-emitting diode is provided. A light-emitting diode comprises: a first light-emitting unit comprising a 1-1 type semiconductor layer, a first active layer and a 1-2 type semiconductor layer; a second light-emitting unit disposed on the first light-emitting unit and comprising a 2-1 type semiconductor layer, a second active layer and a 2-2 type semiconductor layer; a third light-emitting unit disposed on the second light-emitting unit and comprising a 3-1 type semiconductor layer, a third active layer and a 3-2 type semiconductor layer; a first conductive pattern comprising a first part, which is disposed inside the second light-emitting unit and is electrically connected to at least one of the 1-1 type, 1-2 type, 2-1 type and 2-2 type semiconductor layers, and a second part which extends from the first part to one surface of the second light-emitting unit between the second and third light-emitting units; and a second conductive pattern which is disposed on the third light-emitting unit and is electrically connected to the first conductive pattern, wherein the second conductive pattern comprises an area which at least partly overlaps the second part of the first conductive pattern.