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    METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT
    2.
    发明公开
    METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT 审中-公开

    公开(公告)号：EP4459686A1

    公开(公告)日：2024-11-06

    申请号：EP24171239.7

    申请日：2024-04-19

    Applicant: Nichia Corporation

    Inventor： KITAHAMA, Shun

    IPC: H01L33/36 ,  H01L33/42 ,  H01L33/44

    Abstract: A method of manufacturing a light emitting element includes: providing a semiconductor structure including: an n-side semiconductor layer, an active layer positioned on the n-side semiconductor layer, and a p-side semiconductor layer positioned on the active layer; forming a light-transmissive conducting layer including: a first layer positioned on a portion of the upper surface of the p-side semiconductor layer, and a second layer covering the upper surface of the p-side semiconductor layer and the first layer; forming an insulation film covering the second layer; removing a portion of the insulation film in a region that overlaps the first layer in a plan view to form a first opening in the insulation film and to thereby expose the light-transmissive conducting layer from the insulation film; and forming a first conducting layer in the first opening such that the first conductive layer is electrically connected to the light-transmissive conducting layer.

    LIGHT-EMITTING ELEMENT FOR DISPLAY
    3.
    发明公开
    LIGHT-EMITTING ELEMENT FOR DISPLAY 审中-公开

    公开(公告)号：EP4407697A3

    公开(公告)日：2024-11-06

    申请号：EP24169073.4

    申请日：2020-02-06

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： LEE, Seom Geun ,  SHIN, Chan Seob ,  LEE, Ho Joon ,  JANG, Seong Kyu

    IPC: H01L25/075 ,  H01L33/42 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20 ,  H01L33/00

    Abstract: A light-emitting element for a display according to one embodiment comprises: a first LED lamination; a second LED lamination; a third LED lamination; a first transparent electrode interposed between the first LED lamination and the second LED lamination and being in ohmic contact with the lower surface of the first LED lamination; a second transparent electrode interposed between the first LED lamination and the second LED lamination and being in ohmic contact with the upper surface of the second LED lamination; a third transparent electrode interposed between the second LED lamination and the third LED lamination and being in ohmic contact with the upper surface of the third LED lamination; an n electrode pad disposed on a first conductive semiconductor layer of the third LED lamination; a lower p electrode pad disposed on the third transparent electrode; and bump pads arranged on the first LED lamination, wherein the upper surface of the n electrode pad is located at the same height as that of the upper surface of the lower p electrode pad.

    LIGHT-EMITTING DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS
    4.
    发明公开
    LIGHT-EMITTING DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：EP4432374A1

    公开(公告)日：2024-09-18

    申请号：EP24163137.3

    申请日：2024-03-13

    Applicant: Seiko Epson Corporation

    Inventor： AKATSUKA, Yasuto

    IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/56

    CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/44 ,  H01L33/56 ,  H01L33/54

    Abstract: A light-emitting device includes: a first electrode; a second electrode has a light-transmitting property; a first semiconductor layer that is provided between the first electrode and the second electrode; a second semiconductor layer that is provided between the first semiconductor layer and the second electrode and is in contact with the second electrode; a light-emitting layer that is provided between the first semiconductor layer and the second semiconductor layer; and a light-transmitting portion provided on a side of the second electrode opposite to the second semiconductor layer, wherein light generated in the light-emitting layer is emitted from side of the second electrode, a refractive index of the second electrode is lower than a refractive index of the second semiconductor layer and is higher than a refractive index of the light-transmitting portion, and a surface of the second semiconductor layer in contact with the second electrode has an uneven structure.

    METHOD FOR FORMING RESONANT CAVITY LIGHT EMITTING ELEMENTS AND OPTICAL DEVICE USING THE SAME
    8.
    发明公开
    METHOD FOR FORMING RESONANT CAVITY LIGHT EMITTING ELEMENTS AND OPTICAL DEVICE USING THE SAME 审中-公开

    公开(公告)号：EP4250378A1

    公开(公告)日：2023-09-27

    申请号：EP22164120.2

    申请日：2022-03-24

    Applicant: Micledi Microdisplays BV

    Inventor： Buscemi, Guiseppe ,  Steudel, Soeren

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/46 ,  H01L25/075 ,  H01L25/16 ,  H01L27/15 ,  H01L33/62

    Abstract: A method (100) is provided for forming resonant cavity light emitting elements. The method comprises a step (101) of forming a first structure comprising a first substrate, a stop layer, a light emitting epitaxial structure, a conductive oxide layer, and a second substrate dielectrically bonded to the conductive oxide layer. The method further comprises a step (102) of etching from the first substrate up to the stop layer to etch away the first substrate. Additionally, the method comprises a step (103) of forming a plurality of light emitting mesa modules, each having a metal layer deposited on the stop layer. Furthermore, the method comprises a step (104) of hybrid bonding the previously etched first structure to a carrier substrate to form a second structure. Furthermore, the method comprises a step (105) of etching from the second substrate up to the conductive oxide layer. Moreover, the method comprises a step (106) of depositing a distributed Bragg reflector on top of the conductive oxide layer, thereby forming the resonant cavity light emitting elements.

    MIXED COLOR LIGHT-EMITTING DEVICE
    9.
    发明公开
    MIXED COLOR LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：EP4250362A1

    公开(公告)日：2023-09-27

    申请号：EP21901042.8

    申请日：2021-12-02

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： LEE, Chung Hoon

    IPC: H01L27/15 ,  H01L33/04 ,  H01L33/00 ,  H01L33/50 ,  H01L33/08 ,  H01L33/62 ,  H01L33/42

    Abstract: A light-emitting device comprises: a first semiconductor laminated structure configured to emit polychromatic light; and a red light source configured to emit red light, wherein: the first semiconductor laminated structure comprises a first conductive type nitride semiconductor layer, an active layer disposed on the first conductive type nitride semiconductor layer, and a second conductive type nitride semiconductor layer disposed on the active layer; the active layer has a multi-quantum well structure comprising multiple barrier layers and multiple well layers laminated alternately; and the active layer is configured to emit polychromatic light.

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