公开(公告)号：EP3712110A1

公开(公告)日：2020-09-23

申请号：EP20151206.8

申请日：2020-01-10

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： HOSHINO, Naruhiro ,  OKADA, Tetsuro ,  ISHIDA, Masahiko

IPC分类号： C01B33/035 ,  C01B33/03 ,  B01J19/24 ,  C30B29/06

摘要： An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.

公开(公告)号：EP2957543A1

公开(公告)日：2015-12-23

申请号：EP14752073.8

申请日：2014-01-15

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： ISHIDA, Masahiko ,  SAITO, Hiroshi ,  HASEGAWA, Masayuki

IPC分类号： C01B33/107 ,  B01J31/08

CPC分类号： C01B33/1071 ,  B01J31/0237 ,  B01J31/08 ,  C01B33/10773 ,  C01B33/10778

摘要： In order to produce high-purity trichlorosilane by removing methyldichlorosilane from a mixture (S) containing methyldichlorosilane (CH 3 HSiCl 2 ), tetrachlorosilane (SiCl 4 ), and trichlorosilane (HSiCl 3 ) in the method for producing trichlorosilane of the present invention, a procedure is employed in which chlorine atoms are redistributed between methyldichlorosilane and tetrachlorosilane through catalytic treatment for conversion into trichlorosilane and methyltrichlorosilane (CH 3 SiCl 3 ). Methyldichlorosilane (boiling point: 41 °C) having a boiling point close to that of trichlorosilane (boiling point: 32°C) to be purified is converted into methyltrichlorosilane (boiling point: 66°C) having a higher boiling point through redistribution of chlorine atoms between methyldichlorosilane and tetrachlorosilane, achieving easy removal of impurities.

摘要翻译： 为了通过在本发明的三氯硅烷的制造方法中从含有甲基二氯硅烷（CH 3 HSiCl 2），四氯硅烷（SiCl 4）和三氯硅烷（HSiCl 3）的混合物（S）中除去甲基二氯硅烷来生产高纯度三氯硅烷， 通过催化处理将氯原子重新分配在甲基二氯硅烷和四氯硅烷之间，转化为三氯硅烷和甲基三氯硅烷（CH 3 SiCl 3）的方法。 待纯化的沸点接近于三氯硅烷（沸点32℃）的甲基二氯硅烷（沸点41℃）通过再分配氯转化成沸点较高的甲基三氯硅烷（沸点：66℃） 甲基二氯硅烷和四氯硅烷之间的原子，实现了杂质的清除。