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公开(公告)号：EP3296261B1
公开(公告)日：2019-04-17
申请号：EP17196935.5
申请日：2014-01-15
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公开(公告)号：EP2985262B1
公开(公告)日：2019-03-13
申请号：EP14782400.7
申请日：2014-01-15
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公开(公告)号：EP3061727B1
公开(公告)日：2018-06-13
申请号：EP14855379.5
申请日：2014-10-21
IPC分类号： C01B33/035 , B01D3/14 , B01D53/00 , B01D53/04 , C01B33/03 , C01B33/107
CPC分类号： C01B33/03 , B01D3/143 , B01D53/002 , B01D53/0423 , B01D53/0438 , B01D2253/102 , B01D2256/26 , B01D2259/4009 , C01B33/035 , C01B33/1071 , C01B33/10784
摘要： The present invention provides a method for producing semiconductor-grade high-purity polycrystalline silicon in a closed system, the method comprising recovering chlorosilane contained in reaction exhaust gas and circulating the recovered chlorosilane to resupply and reuse the recovered chlorosilane for polycrystalline silicon deposition reaction without discharging the recovered chlorosilane out of the system. The present invention employs a process design including: step D of obtaining chlorosilane with a reduced impurity content from recovered chlorosilane fractionated in step C; and a step of supplying the chlorosilane with a reduced impurity content, which is obtained in the step D, to step A which is a step of depositing polycrystalline silicon. The employment of this process design allows a process for producing semiconductor-grade high-purity polycrystalline silicon to accomplish removal of impurity compounds which would otherwise accumulate in recovered chlorosilane circulating in a deposition reaction system and thus to yield polycrystalline silicon of stable quality.
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公开(公告)号：EP3061727A1
公开(公告)日：2016-08-31
申请号：EP14855379.5
申请日：2014-10-21
IPC分类号： C01B33/035
CPC分类号： C01B33/03 , B01D3/143 , B01D53/002 , B01D53/0423 , B01D53/0438 , B01D2253/102 , B01D2256/26 , B01D2259/4009 , C01B33/035 , C01B33/1071 , C01B33/10784
摘要： The present invention provides a method for producing semiconductor-grade high-purity polycrystalline silicon in a closed system, the method comprising recovering chlorosilane contained in reaction exhaust gas and circulating the recovered chlorosilane to resupply and reuse the recovered chlorosilane for polycrystalline silicon deposition reaction without discharging the recovered chlorosilane out of the system. The present invention employs a process design including: step D of obtaining chlorosilane with a reduced impurity content from recovered chlorosilane fractionated in step C; and a step of supplying the chlorosilane with a reduced impurity content, which is obtained in the step D, to step A which is a step of depositing polycrystalline silicon. The employment of this process design allows a process for producing semiconductor-grade high-purity polycrystalline silicon to accomplish removal of impurity compounds which would otherwise accumulate in recovered chlorosilane circulating in a deposition reaction system and thus to yield polycrystalline silicon of stable quality.
摘要翻译： 本发明提供一种在封闭系统中生产半导体级高纯度多晶硅的方法，所述方法包括回收反应废气中所含的氯硅烷并循环回收的氯硅烷以重新补给并且将回收的氯硅烷再用于多晶硅沉积反应而不放电 将回收的氯硅烷排出系统。 本发明采用的工艺设计包括：步骤D：从步骤C中分馏的回收氯硅烷获得杂质含量降低的氯硅烷; 以及将步骤D中获得的杂质含量降低的氯硅烷供给到作为沉积多晶硅的步骤的步骤A. 该工艺设计的使用允许生产半导体级高纯度多晶硅的工艺以完成去除杂质化合物，否则这些杂质化合物将积聚在在沉积反应系统中循环的回收氯硅烷中并因此产生质量稳定的多晶硅。
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公开(公告)号：EP3296261A1
公开(公告)日：2018-03-21
申请号：EP17196935.5
申请日：2014-01-15
IPC分类号： C01B33/107 , B01J20/26 , B01J20/34 , C01B33/04 , B01J49/00 , B01J41/08 , B01J41/04 , B01J49/57 , B01J41/09 , B01J41/07 , C01B35/02
CPC分类号： B01J49/57 , B01J41/07 , B01J41/09 , C01B33/046 , C01B33/1071 , C01B33/10778 , C01B33/10784
摘要： The present invention provides a technique which allows stable use of an ion-exchange resin for removing boron impurities over a long period of time in the purification step of a silane compound or a chlorosilane compound. In the present invention, a weakly basic ion-exchange resin used for the purification of a silane compound and a chlorosilane compound is cleaned with a gas containing hydrogen chloride. When this cleaning treatment is used for the initial activation of the weakly basic ion-exchange resin, a higher impurity-adsorbing capacity can be obtained. Further, use of the cleaning treatment for the regeneration of the weakly basic ion-exchange resin allows stable use of the ion-exchange resin for a long time. This allows reduction in the amount of the resin used in a long-term operation and reduction in the cost of used resin disposal.
摘要翻译： 本发明提供一种技术，其能够在硅烷化合物或氯硅烷化合物的纯化步骤中长期稳定地使用用于除去硼杂质的离子交换树脂。 在本发明中，用含氯化氢的气体清洗用于硅烷化合物和氯硅烷化合物的纯化的弱碱性离子交换树脂。 当该清洁处理用于弱碱性离子交换树脂的初始活化时，可以获得更高的杂质吸附能力。 此外，使用弱碱性离子交换树脂再生的清洁处理可以长时间稳定地使用离子交换树脂。 这允许减少长期操作中使用的树脂的量并降低使用的树脂处理的成本。
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公开(公告)号：EP3168190A1
公开(公告)日：2017-05-17
申请号：EP15818302.0
申请日：2015-07-02
IPC分类号： C01B33/107
CPC分类号： C01B33/10794 , B01D3/14 , C01B33/107 , C01B33/1071 , C01B33/10789
摘要： First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.
摘要翻译： 首先，在氯硅烷中生成硅烷醇和硅氧烷化合物中的至少一种（S101）。 在该工序中，例如使水分浓度为0.5〜2.5ppm的惰性气体与氯硅烷接触而溶解水分，通过水分子反应生成硅烷醇和硅氧烷化合物中的至少一种 的氯硅烷。 接着，使氯硅烷中含有的含硼化合物与硅烷醇或硅氧烷化合物反应，将含硼化合物转化为氧化硼（S102）。 通过步骤（S102），将作为低沸点化合物的含硼化合物转化为高沸点化合物即氧化硼，因此与氯硅烷的沸点的沸点差变大，以后分离 简单。
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7.发明公开METHOD FOR PURIFYING SILANE COMPOUND OR CHLOROSILANE COMPOUND, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND METHOD FOR REGENERATING WEAKLY BASIC ION-EXCHANGE RESIN 审中-公开方法用于清洁或硅烷化合物的氯硅烷PROCESS FOR PRODUCING多晶硅AND METHOD FOR的弱碱性离子交换树脂的再生
公开(公告)号：EP2985262A1
公开(公告)日：2016-02-17
申请号：EP14782400.7
申请日：2014-01-15
IPC分类号： C01B33/107 , B01J20/26 , B01J20/34
CPC分类号： B01J49/57 , B01J41/07 , B01J41/09 , C01B33/046 , C01B33/1071 , C01B33/10778 , C01B33/10784
摘要： The present invention provides a technique which allows stable use of an ion-exchange resin for removing boron impurities over a long period of time in the purification step of a silane compound or a chlorosilane compound. In the present invention, a weakly basic ion-exchange resin used for the purification of a silane compound and a chlorosilane compound is cleaned with a gas containing hydrogen chloride. When this cleaning treatment is used for the initial activation of the weakly basic ion-exchange resin, a higher impurity-adsorbing capacity can be obtained. Further, use of the cleaning treatment for the regeneration of the weakly basic ion-exchange resin allows stable use of the ion-exchange resin for a long time. This allows reduction in the amount of the resin used in a long-term operation and reduction in the cost of used resin disposal.
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8.发明公开
公开(公告)号：EP3683015A1
公开(公告)日：2020-07-22
申请号：EP19217243.5
申请日：2019-12-17
IPC分类号： B24B5/04 , C01B33/035 , C01B33/037 , C30B29/06 , C30B31/14 , H01L21/67
摘要： In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis C R is shifted from a center axis C 0 of a silicon core wire 20 by 2 mm or more, is manufactured.
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公开(公告)号：EP3578513A1
公开(公告)日：2019-12-11
申请号：EP19177986.7
申请日：2019-06-03
IPC分类号： C01B33/03 , C01B33/035 , C30B28/14
摘要： Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.
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公开(公告)号：EP2957543B1
公开(公告)日：2018-10-17
申请号：EP14752073.8
申请日：2014-01-15
IPC分类号： C01B33/107 , B01J31/08
CPC分类号： C01B33/1071 , B01J31/0237 , B01J31/08 , C01B33/10773 , C01B33/10778
摘要： In order to produce high-purity trichlorosilane by removing methyldichlorosilane from a mixture (S) containing methyldichlorosilane (CH 3 HSiCl 2 ), tetrachlorosilane (SiCl 4 ), and trichlorosilane (HSiCl 3 ) in the method for producing trichlorosilane of the present invention, a procedure is employed in which chlorine atoms are redistributed between methyldichlorosilane and tetrachlorosilane through catalytic treatment for conversion into trichlorosilane and methyltrichlorosilane (CH 3 SiCl 3 ). Methyldichlorosilane (boiling point: 41 °C) having a boiling point close to that of trichlorosilane (boiling point: 32°C) to be purified is converted into methyltrichlorosilane (boiling point: 66°C) having a higher boiling point through redistribution of chlorine atoms between methyldichlorosilane and tetrachlorosilane, achieving easy removal of impurities.
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