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    PROCESS FOR PRODUCING TRICHLOROSILANE
    3.
    发明授权
    PROCESS FOR PRODUCING TRICHLOROSILANE 有权
    生产三氯硅烷的方法

    公开(公告)号：EP2085359B1

    公开(公告)日：2017-11-29

    申请号：EP07830675.0

    申请日：2007-10-26

    申请人： Mitsubishi Materials Corporation

    发明人： MIZUSHIMA, Kazuki ,  URUSHIHARA, Makoto

    IPC分类号： C01B33/107

    CPC分类号： C01B33/1071

    摘要： An apparatus comprising: a reaction chamber 2 into which silicon tetrachloride and hydrogen is introduced for producing a reaction product gas containing trichlorosilane and hydrogen chloride by a reductive reaction at a temperature of not lower than 800°C; a reaction product gas discharging device 4 that discharges the reaction product gas in the reaction chamber 2 to the outside; a cooling gas introducing device 5 that mixes hydrogen, silicon tetrachloride, or hydrogen chloride in the reaction product gas being discharged by the reaction product gas discharging device 4 to cool the reaction product gas.

    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON
    5.
    发明公开
    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON 有权
    VERFAHREN ZUR HERSTELLUNG VON POLYKRISTALLINSILIZIUM

    公开(公告)号：EP3061727A4

    公开(公告)日：2017-03-15

    申请号：EP14855379

    申请日：2014-10-21

    申请人： SHIN-ETSU CHEMICAL CO LTD

    发明人： ISHIDA MASAHIKO ,  NETSU SHIGEYOSHI ,  SAITO HIROSHI ,  HASEGAWA MASAYUKI

    IPC分类号： C01B33/035 ,  B01D3/14 ,  B01D53/00 ,  B01D53/04 ,  C01B33/03 ,  C01B33/107

    CPC分类号： C01B33/03 ,  B01D3/143 ,  B01D53/002 ,  B01D53/0423 ,  B01D53/0438 ,  B01D2253/102 ,  B01D2256/26 ,  B01D2259/4009 ,  C01B33/035 ,  C01B33/1071 ,  C01B33/10784

    摘要： The present invention provides a method for producing semiconductor-grade high-purity polycrystalline silicon in a closed system, the method comprising recovering chlorosilane contained in reaction exhaust gas and circulating the recovered chlorosilane to resupply and reuse the recovered chlorosilane for polycrystalline silicon deposition reaction without discharging the recovered chlorosilane out of the system. The present invention employs a process design including: step D of obtaining chlorosilane with a reduced impurity content from recovered chlorosilane fractionated in step C; and a step of supplying the chlorosilane with a reduced impurity content, which is obtained in the step D, to step A which is a step of depositing polycrystalline silicon. The employment of this process design allows a process for producing semiconductor-grade high-purity polycrystalline silicon to accomplish removal of impurity compounds which would otherwise accumulate in recovered chlorosilane circulating in a deposition reaction system and thus to yield polycrystalline silicon of stable quality.

    摘要翻译： 本发明提供一种在封闭系统中生产半导体级高纯度多晶硅的方法，所述方法包括回收反应废气中所含的氯硅烷并循环回收的氯硅烷以重新补给并且将回收的氯硅烷再用于多晶硅沉积反应而不放电 将回收的氯硅烷排出系统。 本发明采用的工艺设计包括：步骤D：从步骤C中分馏的回收氯硅烷获得杂质含量降低的氯硅烷; 以及将步骤D中获得的杂质含量降低的氯硅烷供给到作为沉积多晶硅的步骤的步骤A. 该工艺设计的使用允许生产半导体级高纯度多晶硅的工艺以完成去除杂质化合物，否则这些杂质化合物将积聚在在沉积反应系统中循环的回收氯硅烷中并因此产生质量稳定的多晶硅。

    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON
    8.
    发明公开
    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON 有权
    制造多晶硅的方法

    公开(公告)号：EP3061727A1

    公开(公告)日：2016-08-31

    申请号：EP14855379.5

    申请日：2014-10-21

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： ISHIDA, Masahiko ,  NETSU, Shigeyoshi ,  SAITO, Hiroshi ,  HASEGAWA, Masayuki

    IPC分类号： C01B33/035

    CPC分类号： C01B33/03 ,  B01D3/143 ,  B01D53/002 ,  B01D53/0423 ,  B01D53/0438 ,  B01D2253/102 ,  B01D2256/26 ,  B01D2259/4009 ,  C01B33/035 ,  C01B33/1071 ,  C01B33/10784

    摘要： The present invention provides a method for producing semiconductor-grade high-purity polycrystalline silicon in a closed system, the method comprising recovering chlorosilane contained in reaction exhaust gas and circulating the recovered chlorosilane to resupply and reuse the recovered chlorosilane for polycrystalline silicon deposition reaction without discharging the recovered chlorosilane out of the system. The present invention employs a process design including: step D of obtaining chlorosilane with a reduced impurity content from recovered chlorosilane fractionated in step C; and a step of supplying the chlorosilane with a reduced impurity content, which is obtained in the step D, to step A which is a step of depositing polycrystalline silicon. The employment of this process design allows a process for producing semiconductor-grade high-purity polycrystalline silicon to accomplish removal of impurity compounds which would otherwise accumulate in recovered chlorosilane circulating in a deposition reaction system and thus to yield polycrystalline silicon of stable quality.

    摘要翻译： 本发明提供一种在封闭系统中生产半导体级高纯度多晶硅的方法，所述方法包括回收反应废气中所含的氯硅烷并循环回收的氯硅烷以重新补给并且将回收的氯硅烷再用于多晶硅沉积反应而不放电 将回收的氯硅烷排出系统。 本发明采用的工艺设计包括：步骤D：从步骤C中分馏的回收氯硅烷获得杂质含量降低的氯硅烷; 以及将步骤D中获得的杂质含量降低的氯硅烷供给到作为沉积多晶硅的步骤的步骤A. 该工艺设计的使用允许生产半导体级高纯度多晶硅的工艺以完成去除杂质化合物，否则这些杂质化合物将积聚在在沉积反应系统中循环的回收氯硅烷中并因此产生质量稳定的多晶硅。