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816 条记录 (耗时 0.035 秒)

    SEMICONDUCTING LAYER PRODUCTION PROCESS
    11.
    发明公开
    SEMICONDUCTING LAYER PRODUCTION PROCESS 审中-公开
    用于半导体层

    公开(公告)号：EP2962317A1

    公开(公告)日：2016-01-06

    申请号：EP14709389.2

    申请日：2014-02-28

    申请人： Isis Innovation Limited

    发明人： SNAITH, Henry James ,  CROSSLAND, Edward James William ,  NOEL, Nakita ,  SIVARAM, Varun ,  LEIJTENS, Tomas

    IPC分类号： H01G9/20 ,  H01L51/42

    CPC分类号： H01G9/2031 ,  H01L51/0032 ,  H01L51/4226 ,  H01L2251/306 ,  Y02E10/542 ,  Y02E10/549

    摘要： The invention provides a process for producing a layer of a semiconductor material, wherein the process comprises: a) disposing on a substrate: i) a plurality of particles of a semiconductor material, ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and iii) a solvent; and b) removing the solvent. The invention also provides a layer of semiconductor material obtainable by this process. In a preferred embodiment, the particles of a semiconductor material comprise mesoporous particles of the semiconductor material or mesoporous single crystals of the semiconductor material. The invention provides a process for producing a compact layer of a semiconductor material, wherein the process comprises: disposing on a substrate i) a solvent, and ii) a molecular compound comprising at least one metal or metalloid atom and one or more groups of formula OR, wherein each R is the same or different and is an unsubstituted or substituted C
    1 -C
    8 hydrocarbyl group, and wherein two or more R groups may be bonded to each other; and b) removing the solvent. The invention also provides a compact layer of a semiconductor material obtainable by this process. These processes can be effectively performed at temperatures of less than 300°C. Further provided are semiconductor devices comprising either a layer of a semiconductor material or a compact layer of a semiconductor material obtainable by the processes of the invention. The invention also provides a process for producing a semiconductor device.

    SENSOR, CONTROLLER AND SYSTEM
    13.
    发明公开
    SENSOR, CONTROLLER AND SYSTEM 审中-公开
    传感器，控制和系统

    公开(公告)号：EP2929259A1

    公开(公告)日：2015-10-14

    申请号：EP13817712.6

    申请日：2013-12-04

    申请人： Isis Innovation Limited

    发明人： MCCULLOCH, Malcolm Duncan ,  ARMSTRONG, Peter Michael

    IPC分类号： F24H9/20 ,  G05D23/00 ,  F24D19/10

    CPC分类号： G01K7/22 ,  F24D19/10 ,  F24D2220/042 ,  F24D2240/26 ,  F24H9/2007 ,  G01N25/00 ,  G01N33/0004 ,  G01N33/18 ,  G05D23/1931

    摘要： The present invention relates to a sensor for measuring temperature of a fluid within a vessel, the vessel having a first region and a second region and the fluid having a temperature profile extending between the first region and the second region, the sensor comprising an array of elements, each element having a temperature-dependent parameter, the array being capable of deployment within or adjacent the vessel such that the array extends along the vessel for measuring the temperature profile, the elements of the array being coupled together between an input and an output, the input being coupled or capable of being coupled to a driving source for driving the sensors, and the output being coupled or capable of being coupled to a detector for measuring an aggregate of the temperature-dependent parameter from the array of elements. The invention further relates to a fluid temperature controller comprising a first input for receiving a first signal indicating a measurement of an aggregate of a temperature-dependent parameter from a sensor according to any preceding claim deployed within or adjacent a vessel containing a fluid having a temperature profile, a second input for receiving a second signal indicating a (preferably absolute) temperature of the fluid in the vessel and a processor configured to calculate a total thermal energy of the fluid in the vessel based on the first and second signals. The invention also relates to a combination comprising a sensing arrangement and a controller; a device; and a system.

    PASSIVE ULTRASOUND IMAGING WITH SPARSE TRANSDUCER ARRAYS
    16.
    发明公开
    PASSIVE ULTRASOUND IMAGING WITH SPARSE TRANSDUCER ARRAYS 审中-公开
    被动超声成像稀疏转换器阵列

    公开(公告)号：EP2895879A1

    公开(公告)日：2015-07-22

    申请号：EP13765396.0

    申请日：2013-09-13

    申请人： Isis Innovation Limited

    发明人： COVIELLO, Christian ,  KOZICK, Richard ,  COUSSIOS, Constantin

    IPC分类号： G01S7/52 ,  G01S15/89 ,  G10K11/34 ,  B06B1/06

    摘要： A passive compression wave imaging system comprises an array of sensor elements arranged in a sparse array and a processor arranged to: store a plurality of samples of the output from each of the sensor elements over a sample period; derive from the stored samples a value for each of a set of image pixels; wherein for each of the image pixels the processing means is arranged to: define a plurality of different sets of weights for the elements of the sparse array; calculate a component of a pixel value from each of the sets of weights and the stored samples; and sum the components of the pixel value to produce a final pixel value.

    OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES
    19.
    发明公开
    OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES 有权
    具有多孔支架材料和钙钛矿亚光电子设备

    公开(公告)号：EP2850627A1

    公开(公告)日：2015-03-25

    申请号：EP13723944.8

    申请日：2013-05-20

    申请人： Isis Innovation Limited

    发明人： SNAITH, Henry ,  LEE, Michael

    IPC分类号： H01G9/20 ,  H01L51/42

    CPC分类号： H01L51/4213 ,  H01L31/0324 ,  H01L51/0032 ,  H01L51/422 ,  H01L51/4226 ,  H01L2031/0344 ,  Y02E10/549

    摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.

    BIOMARKER AND USES THEREOF
    20.
    发明公开
    BIOMARKER AND USES THEREOF 审中-公开
    生物标志物及其用途

    公开(公告)号：EP2802878A1

    公开(公告)日：2014-11-19

    申请号：EP13703459.1

    申请日：2013-01-11

    申请人： Isis Innovation Limited

    发明人： KONG, Anthony

    IPC分类号： G01N33/574

    CPC分类号： G01N33/57496 ,  G01N33/574 ,  G01N2333/705 ,  G01N2333/916 ,  G01N2800/52

    摘要： The present invention provides a method of determining the prognosis of a subject with cancer, or determining the progression of a cancer, or of treating a cancer, wherein the method comprises the step of determining the expression level of PTPN9 in a cancer sample from the subject. Preferably a low level of expression of PTPN9, or no expression of PTPN9, is indicative of a poor prognosis.