NEGATIVE ELECTRODE ACTIVE MATERIAL AND NEGATIVE ELECTRODE FOR LITHIUM ION RECHARGEABLE BATTERY
    12.
    发明公开
    NEGATIVE ELECTRODE ACTIVE MATERIAL AND NEGATIVE ELECTRODE FOR LITHIUM ION RECHARGEABLE BATTERY 有权
    负极活性材料和负极可充电锂离子电池

    公开(公告)号:EP2043182A1

    公开(公告)日:2009-04-01

    申请号:EP07766971.1

    申请日:2007-07-06

    IPC分类号: H01M4/58 H01M4/02 H01M4/36

    摘要: There is provided a negative electrode for a lithium ion secondary battery high in discharge capacity per unit volume, small in capacity loss at the time of initial charge/discharge, and excellent in rapid charge/discharge characteristics.
    Natural graphite, rendered spherical in shape, is mixed with carbon black, and pitch is added to a mixture thus formed to be thermally kneaded before baked at a temperature in a range of 900 to 1500°C, thereby obtaining graphite particles (A), each being substantially spherical in shape, and having fine protrusions on the surface thereof. Since the graphite particles (A) have the fine protrusions on the surface thereof, a multitude of electrically conducting networks are built in a complex way within an electrode, the graphite particles (A) can serve as a negative electrode material excellent in rapid charge/discharge characteristics, and power characteristics. The graphite particles (A) further baked at 3000°C to be graphitized are turned into graphite particles (B), each having similarly fine protrusions on the surface thereof. Further, carbonaceous particles (C) are also obtained by baking a mixture of pitch and carbon black in the range of 900 to 1500°C. By mixing those particles together as appropriate, it is possible to increase electrode density, thereby obtaining a lithium ion secondary battery having less deterioration in discharge capacity holding ratio, and excellent cycle characteristics. In accordance with Raman spectroscopic analysis using argon laser Raman scattering light, there exists a G-band composite peak comprising peaks in the vicinity of 1600cm -1 , and 1580cm -1 , respectively, and at least one peak in the vicinity of D-band at 1380cm -1 , an interlayer distance of the lattice plane d 002 , obtained by wide-range X-ray diffraction, being in the range of 0.335 to 0.337nm.

    Process for producing silicon carbide fibers
    15.
    发明公开
    Process for producing silicon carbide fibers 失效
    Verfahren zur Herstellung von Silicium carbidfasern

    公开(公告)号:EP0744390A2

    公开(公告)日:1996-11-27

    申请号:EP96108094.2

    申请日:1996-05-21

    IPC分类号: C04B35/571

    CPC分类号: C04B35/571

    摘要: The present invention provides a process for producing silicon carbide fibers having a C/Si molar ratio of from 0.85 to 1.39 and excellent in heat resistance and strength at high temperatures, while conventional processes have not been able to produce the fibers having the ratio of less than 1.56.
    The process of the present invention comprises the steps of rendering infusible precursory fibers made from an organosilicon polymer compound to obtain infusible fibers, then primarily baking the infusible fibers in a hydrogen gas-containing atmosphere while raising the temperature thereof to obtain primarily baked fibers, and further secondarily baking the primarily baked fibers to obtain final fibers. The secondary baking is performed in the atmosphere of a mixed gas of an inert gas with hydrogen chloride gas at 1,500 to 2,200 °C.

    摘要翻译: 本发明提供了C / Si摩尔比为0.85〜1.39的碳化硅纤维的制造方法,在高温下耐热性和强度优异的同时,常规方法不能生产出比例小的纤维 比1.56。 本发明的方法包括以下步骤:使由有机硅高分子化合物制成的可熔化的前体纤维得到不熔的纤维,然后主要在含氢气的气氛中焙烧可熔纤维,同时提高其温度以获得主要焙烧的纤维;以及 进一步二次烘烤主要焙烧的纤维以获得最终纤维。 二次烘烤在惰性气体与氯化氢气体的混合气体的气氛中在1500〜2200℃下进行。