公开(公告)号：EP1808899A2

公开(公告)日：2007-07-18

申请号：EP07005698.1

申请日：1999-12-29

申请人： Ilyanok, Alexander Mikhailovich

发明人： Ilyanok, Alexander Mikhailovich

IPC分类号： H01L29/76

CPC分类号： H01L49/006 ,  B82Y10/00 ,  H01L29/7613 ,  H01L39/221 ,  H01L45/00 ,  H01L51/0595

摘要： Quantum-size electronic devices comprise electrodes and at least one cluster separated from the said electrodes by a tunnel-transparent gap. The characteristic dimensions for elements of quantum-size devices are determined by the formula in the range 1÷4 r 0 , wherein r 0 = ℏ/(m e α 2 c), wherein ℏ is Planck's constant, m e is the electron mass, α= 1/137,036 is the fine structure constant, c is the light speed.
The cluster may be made of a semiconductor material, conductor, superconductor, high-molecular substance or a covering with a tunnel-transparent dielectric. The matured theory provides possibilities for designing logical devices operating in the mode of transfer and/or storing of several electrons at normal conditions and high temperatures. The operating conditions of the devices are determined.
The invention provides basic condition for constructing of high-temperature superconducting components and devices based thereon, as well as for transmitting electric signals and energy loss-free.

摘要翻译： 量子电子器件包括电极和通过隧道透明间隙与所述电极分离的至少一个簇。 量子尺寸器件元件的特征尺寸由1÷4 r 0范围内的公式确定，其中r 0 =“ /（me±2 c）”，其中“ 是普朗克常数，我是电子质量 ，±1 / 137,036是精细结构常数，c是光速。 簇可以由半导体材料，导体，超导体，高分子物质或具有隧道透明电介质的覆盖物制成。 成熟的理论提供了设计在正常条件和高温下以多个电子传输和/或存储的方式工作的逻辑设备的可能性。 确定设备的工作条件。 本发明提供了构建基于其的高温超导元件和器件以及用于传输电信号和无能量损耗的基本条件。

公开(公告)号：EP1743379A2

公开(公告)日：2007-01-17

申请号：EP05739776.2

申请日：2005-04-25

申请人： The Regents of the University of Colorado, A Body Corporate

发明人： ELIASSON, Blake, J. ,  ESTES, Mickael, J.

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L39/00

CPC分类号： H01L45/00 ,  H01L29/7606

摘要： A hot electron transistor (450) includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode.

公开(公告)号：EP1107330A3

公开(公告)日：2003-09-03

申请号：EP00310650.7

申请日：2000-11-30

申请人： DOW CORNING CORPORATION

发明人： Biscotto, Mark Angelo ,  Holl, Mark Monroe Banaszak ,  Orr, Bradford Grant ,  Pernisz, Udo C.

IPC分类号： H01L45/00 ,  H01L21/316 ,  G02F1/19

CPC分类号： H01L45/00 ,  G02F1/19 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/3124 ,  H01L21/316 ,  H01L28/40 ,  Y10T428/12493 ,  Y10T428/12535 ,  Y10T428/12611 ,  Y10T428/12674 ,  Y10T428/12736 ,  Y10T428/12771 ,  Y10T428/12806 ,  Y10T428/12861 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/24917 ,  Y10T428/265 ,  Y10T428/31663 ,  Y10T428/31678

摘要： Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorption lines change in proportion to a small electric current flowing through the material. These changes occur with response times of the order of seconds, and show time constants of the order of minutes to reach stationary values.

公开(公告)号：EP0901169B1

公开(公告)日：2003-04-02

申请号：EP97306916.4

申请日：1997-09-05

申请人： HITACHI EUROPE LIMITED

发明人： Nakazato, Kazuo ,  Mizuta, Hiroshi ,  Shimada, Toshikazu ,  Sunami, Hideo ,  Itoh, Kiyoo ,  Teshima, Tatsuya ,  Mine, Toshiyuki

IPC分类号： H01L29/772 ,  H01L45/00 ,  H01L29/788 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L21/28202 ,  H01L27/0688 ,  H01L29/513 ,  H01L29/518 ,  H01L29/772 ,  H01L29/78642 ,  H01L29/78675 ,  H01L29/7883 ,  H01L29/8616 ,  H01L45/00

公开(公告)号：EP1240677A1

公开(公告)日：2002-09-18

申请号：EP00988827.2

申请日：2000-12-22

申请人： Nanoway Oy

发明人： KAUPPINEN, Juha ,  PEKOLA, Jukka ,  MANNINEN, Antti

IPC分类号： H01L45/00 ,  H01L39/22 ,  H01L39/24 ,  H01L29/76

CPC分类号： H01L45/00

摘要： A method for stabilizing a tunnel junction component, in which a mask is formed on the surface of a substrate, and conductors (3, 4) are constructed by evaporation onto the substrate in an evaporation chamber, and at least one thin oxide layer element (5) is oxidized on top of a selected conductor (3). This remains partly under the following conductor (4), thus forming a tunnel junction element (2) with those conductors (3, 4), and titanium (Ti) or another gettering substance is evaporated on top of the said following conductor (4), before the tunnel junction component is removed from the evaporation chamber, when the titanium layer (7) thus created protects the tunnel junction element (2) from the detrimental effects of air molecules.

摘要翻译： 一种用于稳定其中在衬底的表面上形成掩模的隧道结部件的方法，并且通过蒸发在蒸发室中的衬底上蒸发构造导体，并且至少一个薄氧化物层元件在 选定导体。 这仍然部分地在下面的导体之下，因此在隧道结部件从蒸发室移除之前形成具有这些导体的隧道结元件和钛（Ti）或其它吸气物质在所述后续导体的顶部蒸发， 如此形成的钛层保护隧道结元件免受空气分子的不利影响。

公开(公告)号：EP1186064A1

公开(公告)日：2002-03-13

申请号：EP00928162.7

申请日：2000-04-13

申请人： The Gillette Company

发明人： LYNCH, Anne, T. ,  GORDON, Eric, S.

IPC分类号： H01L45/00

CPC分类号： H01M10/488 ,  H01L45/00 ,  Y10T428/25 ,  Y10T428/263 ,  Y10T428/268 ,  Y10T428/269 ,  Y10T428/31681

摘要： A metal-insulator-metal diode device (10) and method of manufacture are described. The device includes conductive layers (12, 16) and a metal-insulator layer (14) comprising particles of a refractory metal (20) having an instrinsic oxide coating (20a) that are suspended in a dielectric binder (22) which may further contain dielectric filler material particles (24). In one embodiment, the metal-insulator layer (14) comprises particles of a refractory metal such as tantalum, the filler material comprises titanium dioxide particles, and the device is formed by printing. The diode device is especially useful for all-printed battery tester applications.

公开(公告)号：EP0995600A3

公开(公告)日：2001-12-12

申请号：EP99119394.7

申请日：1999-09-29

申请人： CANON KABUSHIKI KAISHA

发明人： Sugioka, Hideyuki

IPC分类号： B41J2/14 ,  H01L45/00

CPC分类号： B41J2/14129 ,  B41J2/14072 ,  B41J2202/03 ,  H01L45/00

摘要： This invention provides an ink jet recording head for discharging an ink droplet using the thermal energy of heating means. According to the present invention, the heating means is a heating device having the Metal-Insulator-Metal type current-voltage properties in which the resistance value on the application of a low voltage exhibits a value higher than the resistance value on the application of a high voltage, regardless of the polarity.

公开(公告)号：EP0995600A2

公开(公告)日：2000-04-26

申请号：EP99119394.7

申请日：1999-09-29

申请人： CANON KABUSHIKI KAISHA

发明人： Sugioka, Hideyuki

IPC分类号： B41J2/14

CPC分类号： B41J2/14129 ,  B41J2/14072 ,  B41J2202/03 ,  H01L45/00

摘要： This invention provides an ink jet recording head for discharging an ink droplet using the thermal energy of heating means. According to the present invention, the heating means is a heating device having the Metal-Insulator-Metal type current-voltage properties in which the resistance value on the application of a low voltage exhibits a value higher than the resistance value on the application of a high voltage, regardless of the polarity.

摘要翻译： 本发明提供一种用于使用加热装置的热能排出墨滴的喷墨记录头。 根据本发明，加热装置是具有金属 - 绝缘体 - 金属型电流 - 电压特性的加热装置，其中施加低电压时的电阻值表现出高于施加电阻值的电阻值 高电压，无论极性如何。

公开(公告)号：EP0601692B1

公开(公告)日：1997-11-12

申请号：EP93307226.6

申请日：1993-09-14

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kawakubo, Takashi c/o Int.Prop.Div.K.K. Toshiba ,  Hirayama, Hideo c/o Int.Prop.Div. K.K. Toshiba ,  Sano, Kenya c/o Int.Prop.Div.K.K. Toshiba ,  Oose, Michihiro c/oInt.Prop.Div.K.K. Toshiba ,  Tsutsumi, Junsei c/o Int.Prop.Div.K.K. Toshiba

IPC分类号： H01L29/66 ,  H01L29/76 ,  H01L45/00 ,  H01L29/737 ,  H01L29/88

CPC分类号： B82Y10/00 ,  H01L29/155 ,  H01L29/161 ,  H01L29/221 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66977 ,  H01L29/7376 ,  H01L29/7606 ,  H01L29/882 ,  H01L45/00

公开(公告)号：EP0610083B1

公开(公告)日：1997-09-10

申请号：EP94300809.4

申请日：1994-02-03

申请人： SHARP KABUSHIKI KAISHA

发明人： Yamaue, Satoshi ,  Adachi, Masahiro ,  Morimoto, Hiroshi ,  Yoshida, Masaru ,  Kaise, Yasuyoshi

IPC分类号： H01L45/00 ,  H01L27/12

CPC分类号： G02F1/1365 ,  H01L27/1214 ,  H01L45/00

摘要： A display apparatus including a plurality of pixel electrodes arranged in a matrix on a first substrate (1); a scanning line (2) for sending a signal to the plurality of pixel electrodes (5) for driving the plurality of pixel electrodes (5); a switching device for receiving the signal from the scanning line (2) and switching each of the plurality of pixel electrodes (5) into one of a conductive state and a non-conductive state in accordance with the signal; a counter electrode on a second substrate opposed to the first substrate (1); and a display medium layer (10) sandwiched between the first substrate and the second substrate. The switching device includes a two-terminal element (14) having a first electrode (4) which is a part of the scanning line; a zinc sulfide layer (3) on the first electrode, said zinc sulfide layer (3) having an I-V characteristic expressed by a continuous curve; and a second electrode (8) located on the zinc sulfide layer (3) and electrically connected to the pixel electrode.