公开(公告)号：EP2795690A4

公开(公告)日：2015-08-19

申请号：EP12859028

申请日：2012-11-20

申请人： NOKIA TECHNOLOGIES OY

发明人： COLLI ALAN ,  AWAN SHAKIL ,  LOMBARDO ANTONIO ,  KULMALA TERO ,  FERRARI ANDREA ,  ECHTERMEYER TIM

IPC分类号： H01L45/00 ,  B82Y15/00 ,  G01J1/44

CPC分类号： H01L31/022408 ,  H01L31/1085 ,  H01L45/00 ,  H01L2031/0344

公开(公告)号：EP2277174B1

公开(公告)日：2014-06-11

申请号：EP09751113.3

申请日：2009-04-30

申请人： Micron Technology, Inc.

发明人： MOULI, Chandra

IPC分类号： G11C13/00 ,  G11C11/56 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L27/2418 ,  G11C5/02 ,  G11C11/34 ,  G11C11/39 ,  G11C11/4026 ,  G11C11/5664 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/003 ,  G11C2013/009 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  G11C2216/08 ,  H01L29/6609 ,  H01L45/00 ,  H01L45/141 ,  H01L45/145 ,  H01L45/16

摘要： Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.

公开(公告)号：EP2652787A1

公开(公告)日：2013-10-23

申请号：EP11849889.8

申请日：2011-11-28

申请人： Intel Corporation

发明人： HAFEZ, Walid, M. ,  RAHMAN, Anisur

IPC分类号： H01L27/115 ,  H01L21/8247

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L28/40 ,  H01L29/4234 ,  H01L29/513 ,  H01L45/00

摘要： A non-volatile storage element and a method of forming the storage element. The non-volatile storage element comprises: a first electrode including a first material having a first work function; a second electrode including a second material having a second work function higher than the first work function; a first dielectric disposed between the first electrode and the second electrode, the first dielectric having a first bandgap; a second dielectric disposed between the first dielectric and the second electrode, the second dielectric having a second bandgap wider than the first bandgap and being disposed such that a quantum well is created in the first dielectric; and a third dielectric disposed between the first electrode and the first dielectric, the third dielectric being thinner than the second dielectric and having a third bandgap wider than the first bandgap.

公开(公告)号：EP2485288A1

公开(公告)日：2012-08-08

申请号：EP12000385.0

申请日：2012-01-23

申请人： Penev, Milen

发明人： Penev, Milen

IPC分类号： H01L45/00

CPC分类号： H01L45/00

摘要： The invention concerns a high efficiency energy source using quantum mechanics approach, a tunnelling battery (100) and comprises a metal or semiconductor plate, an injector or anode (3), a cathode (4) and a control plate (2), placed in parallel, wherein a thin dielectric layer (5) is placed between anode (3) and cathode (4) and a dielectric layer (6) is placed between cathode (4) and control plate (2). The tunneling battery (100) also comprises an anode terminal (7), electrically connected to anode plate (3), and a cathode terminal (8) of the tunneling battery is electrically connected with the cathode plate (4).

摘要翻译： 本发明涉及一种使用量子力学方法的高效能源，隧道电池（100），包括金属或半导体板，喷射器或阳极（3），阴极（4）和控制板（2） 平行地，其中在阳极（3）和阴极（4）之间放置薄介电层（5），并且介电层（6）放置在阴极（4）和控制板（2）之间。 隧道电池（100）还包括电连接到阳极板（3）的阳极端子（7），并且隧道电池的阴极端子（8）与阴极板（4）电连接。

公开(公告)号：EP1708291B1

公开(公告)日：2011-09-28

申请号：EP06075740.8

申请日：2006-03-29

申请人： TDK Corporation

发明人： Kuwashima, Tetsuya, ,  Ohta, Naoki,

IPC分类号： H01L45/00 ,  G01L1/22 ,  G01B7/16

CPC分类号： G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

公开(公告)号：EP2351089A2

公开(公告)日：2011-08-03

申请号：EP09829614.8

申请日：2009-10-28

申请人： Micron Technology, Inc.

发明人： SANDHU, Gurtej, S. ,  SRINIVASAN, Bhaskar

IPC分类号： H01L29/861

CPC分类号： H01L21/04 ,  H01L27/1021 ,  H01L27/2418 ,  H01L29/1606 ,  H01L45/00

摘要： Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.

公开(公告)号：EP2277174A2

公开(公告)日：2011-01-26

申请号：EP09751113.3

申请日：2009-04-30

申请人： Micron Technology, Inc.

发明人： MOULI, Chandra

IPC分类号： G11C8/08

CPC分类号： H01L27/2418 ,  G11C5/02 ,  G11C11/34 ,  G11C11/39 ,  G11C11/4026 ,  G11C11/5664 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/003 ,  G11C2013/009 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  G11C2216/08 ,  H01L29/6609 ,  H01L45/00 ,  H01L45/141 ,  H01L45/145 ,  H01L45/16

摘要： Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.

摘要翻译： 一些实施例包括具有字线，位线，可选择性地以三种或更多种不同电阻状态中的一种状态配置的存储器元件的存储器件，以及被配置为允许电流从字线通过存储器元件流动到位线，该二极管响应于 电压施加在字线和位线之间，并且如果电压增加或减小则降低电流。 一些实施例包括具有字线，位线，可选择地以两种或多种不同电阻状态之一配置的存储器元件的存储器件，被配置为阻止第一电流响应于第一电压从位线流向字线的第一二极管，以及 第二二极管，包括介电材料，并且被配置为响应于第二电压允许第二电流从字线流向位线。

公开(公告)号：EP1812976B1

公开(公告)日：2010-09-08

申请号：EP05801866.4

申请日：2005-09-27

申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

发明人： ULMER, Kurt ,  WENG, Jian-gang ,  MARDILOVICH, Peter ,  RUDIN, John Christopher

IPC分类号： H01L45/00 ,  G02F1/1365

CPC分类号： H01L45/00

公开(公告)号：EP1393377A4

公开(公告)日：2007-12-12

申请号：EP02726876

申请日：2002-05-16

申请人： UNIV COLORADO

发明人： MODDEL GARRET ,  ELIASSON BLAKE J

IPC分类号： H01L27/144 ,  H01L29/73 ,  H01L29/76 ,  H01L29/82 ,  H01L31/08 ,  H01L39/22 ,  H01L45/00 ,  H01L29/08

CPC分类号： H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

摘要： A detector (10A) for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers (14), which layers are spaced apart such that a given voltage can be applied thereacross. The first non-insulating layer (12) is formed of a metal, and the first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies. The detector further includes an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between the first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure. The arrangement includes at least a first layer of an amorphous material (16) such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted at the output to an electrical signal having an intensity which depends on the given responsivity.

公开(公告)号：EP1812976A1

公开(公告)日：2007-08-01

申请号：EP05801866.4

申请日：2005-09-27

申请人： Hewlett-Packard Development Company, L.P.

发明人： ULMER, Kurt ,  WENG, Jian-gang ,  MARDILOVICH, Peter ,  RUDIN, John Christopher

IPC分类号： H01L45/00 ,  G02F1/1365

CPC分类号： H01L45/00

摘要： A method for forming a metal-insulator-metal device (24, 124, 224, 424) includes imprinting at least one first layer (620) to form a first depression (636), removing a portion of at least one second layer (610) through the first depression (636) to form a recess (640) in the at least one second layer (610) bordered by a first side (642), a first overhang (646) along the first side (642), a second opposite side (644) and a second overhang (648) along the second side (644). The method also includes depositing a first metal (452) in the recess (640) spaced from the first side (642) and the second side (644) and oxidizing the first metal (452) to create a non-linear dielectric (661).