公开(公告)号：EP0651076A1

公开(公告)日：1995-05-03

申请号：EP94115744.8

申请日：1994-10-06

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Cabral, Cyril, Jr. ,  Clevenger, Lawrence Alfred ,  d'Heurle, Francois Max ,  Harper, James McKell Edwin ,  Mann, Randy William ,  Miles, Glen Lester ,  Rakowski, Donald Walter Douglas

IPC分类号： C30B1/02 ,  C30B1/00 ,  H01L21/285

CPC分类号： C30B1/02 ,  C30B29/10 ,  H01L21/28518 ,  H01L29/665 ,  Y10S148/04 ,  Y10S148/147

摘要： The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10¹⁷ atoms/cm³. The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700°C, and more preferably between about 600-700°C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900°C.

摘要翻译： 形成在半导体晶片上的硅层上的金属硅化物层的相变温度降低。 首先，将难熔金属设置在硅层的表面附近，在覆盖难熔金属的层中沉积前体金属，并将晶片加热到足以从前体金属形成金属硅化物的温度。 前体金属可以是难熔金属，优选为钛，钨或钴。 硅层表面的难熔金属的浓度优选小于约10 7原子/ cm 3。 难熔金属可以是Mo，Co，W，Ta，Nb，Ru或Cr，更优选为Mo或Co。用于形成硅化物的加热步骤在低于约700℃的温度下进行， 优选约600-700℃。任选地，在沉积难熔金属的步骤之后，并且在沉积前体金属层的步骤之前，将晶片退火。 优选地，该退火步骤在至少约900℃的晶片温度下进行。

公开(公告)号：EP0076105B1

公开(公告)日：1986-12-10

申请号：EP82305023.2

申请日：1982-09-23

申请人： FUJITSU LIMITED

发明人： Goto, Hiroshi

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L29/08

CPC分类号： H01L29/72 ,  H01L21/033 ,  H01L21/28512 ,  H01L29/42304 ,  Y10S148/01 ,  Y10S148/04

公开(公告)号：EP0076105A3

公开(公告)日：1984-08-01

申请号：EP82305023

申请日：1982-09-23

申请人： FUJITSU LIMITED

发明人： Goto, Hiroshi

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L29/08

CPC分类号： H01L29/72 ,  H01L21/033 ,  H01L21/28512 ,  H01L29/42304 ,  Y10S148/01 ,  Y10S148/04

摘要： A method of producing a bipolar transistor comprises the steps of forming a base region (41), forming a high-melting-point metal layer (42) of a base electrode on the base region (41), forming a first insulating layer (43) on the metal layer (42), and selectively etching the first insulating layer (43) and the metal layer (42) to form an opening (45). A second insulating layer (46) is formed on the sides of the first insulating layer (43) and the metal layer (42) within the opening (45), the second insulating layer (46) defining an emitter-providing region. impurities are introduced into the base region (41) by using the second insulating layer (43) as a mask to form an emitter region (49). An emitter electrode (51) and the base electrode (42) are arranged in a like multilayer structure.