公开(公告)号：EP3104185A1

公开(公告)日：2016-12-14

申请号：EP16180538.7

申请日：2013-11-07

申请人： ALPS GREEN DEVICES CO., LTD

发明人： Hebiguchi, Hiroyuki

IPC分类号： G01R31/36 ,  H01M10/48

CPC分类号： G01R31/3675 ,  G01R31/3606 ,  G01R31/3624 ,  G01R31/3662 ,  G01R31/3679 ,  H01M10/48 ,  H01M10/486

摘要： In a state detection method, for a storage device (1), in which the SOH or SOC of the storage device (1) is inferred from the internal impedance of the storage device (1): the internal resistance of the storage device (1) is measured by using a signal with a first frequency at which the internal impedance of the storage device (1) is reduced as a temperature is raised, and the initial SOH or initial SOC of the storage device (1) is calculated from the measured value of this internal resistance; the internal impedance of the storage device (1) is measured by using a signal with a second frequency at which the internal impedance of the storage device (1) is increased as a temperature is raised, and the internal temperature of the storage device (1) is calculated from the measured impedance value of this internal impedance; and the SOH or SOC is inferred by using the calculated value of the internal temperature to correct the initial SOH or initial SOC.

摘要翻译： 在存储装置（1）的存储装置（1）中，根据存储装置（1）的内部阻抗推断存储装置（1）的SOH或SOC的状态检测方法：存储装置（1）的内部电阻 ）通过使用具有第一频率的信号来测量，其中存储装置（1）的内部阻抗随着温度升高而降低，并且从测量到的存储装置（1）的初始SOH或初始SOC被计算 这种内阻的价值; 通过使用具有第二频率的信号来测量存储装置（1）的内部阻抗，其中存储装置（1）的内部阻抗随温度升高而增加，并且存储装置（1）的内部温度 ）由该内部阻抗的测量阻抗值计算; 并通过使用内部温度的计算值来校正初始SOH或初始SOC来推断SOH或SOC。

公开(公告)号：EP2919028A4

公开(公告)日：2016-11-09

申请号：EP13852885

申请日：2013-11-07

申请人： ALPS GREEN DEVICES CO LTD

发明人： HEBIGUCHI HIROYUKI

IPC分类号： G01R31/36 ,  H01M10/48

CPC分类号： G01R31/3675 ,  G01R31/3606 ,  G01R31/3624 ,  G01R31/3662 ,  G01R31/3679 ,  H01M10/48 ,  H01M10/486

摘要： [Object] To provide to a storage device state detection method of accurately detecting the state of health (SOH) and state of charge (SOC) of a storage device. [Solution] In a state detection method, for a storage device (1), in which the SOH or SOC of the storage device (1) is inferred from the internal impedance of the storage device (1): the internal resistance of the storage device (1) is measured by using a signal with a first frequency at which the internal impedance of the storage device (1) is reduced as a temperature is raised, and the initial SOH or initial SOC of the storage device (1) is calculated from the measured value of this internal resistance; the internal impedance of the storage device (1) is measured by using a signal with a second frequency at which the internal impedance of the storage device (1) is increased as a temperature is raised, and the internal temperature of the storage device (1) is calculated from the measured impedance value of this internal impedance; and the SOH or SOC is inferred by using the calculated value of the internal temperature to correct the initial SOH or initial SOC.

公开(公告)号：EP2944932A4

公开(公告)日：2016-08-17

申请号：EP13870565

申请日：2013-12-24

申请人： ALPS GREEN DEVICES CO LTD

发明人： HEBIGUCHI HIROYUKI

IPC分类号： G01K7/00 ,  H01M10/48

CPC分类号： G01K13/00 ,  G01K7/00 ,  G01R31/3606 ,  G01R31/3662 ,  H01M10/486

公开(公告)号：EP3021127A1

公开(公告)日：2016-05-18

申请号：EP14823079.0

申请日：2014-06-27

申请人： Alps Green Devices Co., Ltd.

发明人： HEBIGUCHI, Hiroyuki

IPC分类号： G01R31/36 ,  H01M10/48 ,  H02J7/00

CPC分类号： G01R31/3679 ,  G01R31/3662 ,  H01M10/052 ,  H01M10/48 ,  H02J7/0021

摘要： To provide an electricity storage device state inference method by which a state of an electricity storage device can be accurately inferred by a simple method in which measurement of temperature is not performed. [Solution] The internal impedance |Z| of an electricity storage device 10 is measured at a frequency at which the internal impedance of the electricity storage device 101 does not change with temperature, and the SOC or SOH of the electricity storage device 101 is inferred on the basis of the measured value. Furthermore, the real part R of the internal impedance of the electricity storage device 10 is measured at a frequency at which the real part R of the internal impedance of the electricity storage device 101 does not change with temperature, and the SOC or SOH of the electricity storage device 101 is inferred on the basis of the measured value.

摘要翻译： 为了提供一种蓄电装置状态推理方法，能够通过不进行温度测量的简单方法来准确地推断蓄电装置的状态。 [解决方案]内部阻抗| Z | 以蓄电装置101的内部阻抗不随温度变化的频率来测量蓄电装置10，并且基于测量值推断蓄电装置101的SOC或SOH。 此外，蓄电装置10的内部阻抗的实部R以蓄电装置101的内部阻抗的实部R不随温度变化的频率被测量，并且 蓄电装置101基于测定值推断。

公开(公告)号：EP2851691A1

公开(公告)日：2015-03-25

申请号：EP13791069.1

申请日：2013-04-03

申请人： Alps Green Devices Co., Ltd.

发明人： TAMURA, Manabu

IPC分类号： G01R15/20

CPC分类号： G01R19/00 ,  G01R15/20 ,  G01R15/207 ,  G01R33/02

摘要： Provided is a current sensor with a simple structure that is capable of removing the influence of an induced magnetic field generated by a current flowing through a neighboring conductor. A current sensor (1) includes: a first conductor (101) and a second conductor (111) arranged in such a manner as to form current paths parallel to each other; a circuit substrate (105) arranged in such a manner that a surface (A1) thereof is perpendicular to the current paths; and a first magnetoelectric conversion device (102) and a second magnetoelectric conversion device (103) arranged on the surface of the circuit substrate in such a manner that the first conductor is sandwiched therebetween. The first conductor, the second conductor, the first magnetoelectric conversion device, and the second magnetoelectric conversion device are all located in the same plane (P).

摘要翻译： 提供了一种具有简单结构的电流传感器，其能够消除流过相邻导体的电流所产生的感应磁场的影响。 本发明提供一种电流传感器（1），其包括：以形成相互平行的电流路径的方式配置的第一导体（101）和第二导体（111） 电路基板（105），其表面（A1）以与电流路径垂直的方式配置; 以及第一磁电转换元件（102）和第二磁电转换元件（103），其以夹着第一导体的方式配置在电路基板的表面上。 第一导体，第二导​​体，第一磁电转换元件和第二磁电转换元件全部位于同一平面（P）内。

公开(公告)号：EP2741060A1

公开(公告)日：2014-06-11

申请号：EP12819943.7

申请日：2012-07-26

申请人： Alps Green Devices Co., Ltd.

发明人： HEBIGUCHI,Hiroyuki

IPC分类号： G01K7/00 ,  H01M10/48

CPC分类号： G01R31/3606 ,  G01K7/42 ,  G01K13/00 ,  H01G11/18 ,  H01G11/84 ,  H01M10/48 ,  H01M10/486 ,  Y02T10/7022

摘要： It is an object to provide an electrical storage device temperature measuring method for accurately measuring the internal temperature of an electrical storage device as compared to an existing electrical storage device temperature measuring method by which the internal temperature of the electrical storage device cannot be accurately obtained since a measured value of a measured internal impedance varies due to influence of a deterioration state of the electrical storage device. An internal impedance of an electrical storage device (1) is measured by using a signal of a frequency which ions in the electrical storage device (1) are difficult to follow (e.g., a frequency equal to or higher than 10 kHz), and an internal temperature of the electrical storage device (1) is calculated from a measured value of the internal impedance.

摘要翻译： 本发明的目的是提供一种与现有的蓄电装置温度测量方法相比，用于精确测量蓄电装置的内部温度的蓄电装置温度测量方法，由此，不能准确地获得蓄电装置的内部温度，因为 测量的内部阻抗的测量值由于蓄电装置的劣化状态的影响而变化。 通过使用电存储装置（1）中的离子难以跟随的频率的信号（例如，等于或高于10kHz的频率）来测量蓄电装置（1）的内部阻抗，并且 蓄电装置（1）的内部温度由内部阻抗的测量值计算。

公开(公告)号：EP2738282A1

公开(公告)日：2014-06-04

申请号：EP12818253.2

申请日：2012-07-26

申请人： Alps Green Devices Co., Ltd.

发明人： TAKADATE, Kinshiro ,  KOSHIBA, Hisato

IPC分类号： C22C45/02 ,  B22F1/00 ,  H01F1/153 ,  H01F1/26

CPC分类号： H01F1/28 ,  B22F9/002 ,  C22C33/003 ,  C22C33/0214 ,  C22C33/0228 ,  C22C45/02 ,  H01F1/15308 ,  H01F1/15375 ,  H01F41/0246

摘要： [Object] To provide an Fe-based amorphous alloy having a glass transition temperature (Tg) and capable of exhibiting a high saturation magnetic flux density Bs, and a dust core made using a powder of the Fe-based amorphous alloy.
[Solution] The compositional formula of an Fe-based amorphous alloy of the present invention is (Fe 100-a-b-c-de Cr a P b C c B d Si e (a, b, c, d, and e are in terms of at%), where 0 at % ≤ a ≤ 1.9 at%, 1.7 at % ≤ b ≤ 8.0 at %, 0 at% ≤ e ≤ 1.0 at %, an Fe content (100-a-b-c-d-e) is 77 at % or more, 19 at % ≤ b + c + d + e ≤ 21.1 at%, 0.08 ≤ b/(b + c + d) ≤ 0.43, 0.06 ≤ c/(c + d) ≤ 0.87, and the Fe-based amorphous alloy has a glass transition temperature (Tg).

摘要翻译： 本发明的课题是提供一种具有玻璃化转变温度（Tg），并且能够表现出高的饱和磁通密度Bs的Fe基非晶质合金，以及使用该Fe基非晶质合金粉末的压粉磁芯制造。 [解决本发明的Fe基非晶质合金的组成式为（铁100-ABC-DE的Cr AP B C C B D的Si E（A，B，C，D，和e来讲 原子％），其中，0原子％‰¤â‰¤1.9原子％，1.7原子％‰¤b‰¤8.0原子％，0原子％‰¤ë‰¤1.0原子％（Fe含量100 ABCDE）是 在77％以上，19原子％‰¤b + C + D + E‰¤21.1原子％，12点08‰¤C b /（b + C + D）‰¤0.43 0:06‰¤/（C + D） ‰¤0.87，和Fe基非晶质合金的玻璃化转变温度（Tg）。

公开(公告)号：EP2546661A1

公开(公告)日：2013-01-16

申请号：EP11753121.0

申请日：2011-02-08

申请人： Alps Green Devices Co., Ltd.

发明人： HAYASHI, Nobuhiro ,  KOGURE, Tatsuya ,  TAKAHASHI, Akira

IPC分类号： G01R15/20

CPC分类号： G01R15/205 ,  B82Y25/00 ,  G01R33/093

摘要： To provide a current measurement apparatus which can detect a current to be detected, with high sensitivity and high accuracy and which enables simplification of a configuration and a reduction in size. In a current measurement apparatus (1) including multiple GMR elements (12-1 to 12-N) each including a pinned magnetic layer (18) having a pinned magnetization direction, and a free magnetic layer (20) having a magnetization direction to be changed by an external magnetic field, and a calculation unit (21) for obtaining the magnitude of a current to be detected, from outputs of the multiple GMR elements (12-1 to 12-N), the multiple GMR elements (12-1 to 12-N) are disposed in ring shape around a conductor (13) through which the current to be detected flows, and are electrically connected so as to form a series variable resistor by using the multiple GMR elements (12-1 to 12-N).

摘要翻译： 提供能够以高灵敏度和高精度检测待检测电流的电流测量装置，并且能够简化结构和减小尺寸。 在包括多个GMR元件（12-1〜12-N）的电流测量装置（1）中，每个包括具有钉扎磁化方向的钉扎磁性层（18）和具有磁化方向的自由磁性层（20） 由多个GMR元件（12-1至12-N）的输出，多个GMR元件（12-1）的多个GMR元件（12-1至12-N）的输出，以及用于获得要检测的电流的大小的计算单元（21） 至12-N）环绕导体（13）设置，待检测电流通过该导体流动，并且通过使用多个GMR元件（12-1至12-）电连接以形成串联可变电阻器， N）。

公开(公告)号：EP2463396A1

公开(公告)日：2012-06-13

申请号：EP10806275.3

申请日：2010-05-12

申请人： Alps Green Devices Co., Ltd.

发明人： TSUCHIYA, Keiko ,  KOSHIBA, Hisato ,  KANEKO, Kazuya ,  ABIKO, Seiichi ,  MIZUSHIMA, Takao

IPC分类号： C22C45/02 ,  C21D6/00 ,  H01F1/153 ,  H01F1/26 ,  H01F27/255

CPC分类号： C22C45/02 ,  C21D6/00 ,  C21D2201/03 ,  C22C33/003 ,  C22C33/02 ,  C22C2200/02 ,  C22C2202/02 ,  H01F1/15308 ,  H01F27/255 ,  H01F41/0226 ,  H01F2017/048

摘要： [Object] An object is to provide an Fe-based amorphous alloy used for a powder core and/or a coil encapsulated powder core having, in particular, a low glass transition temperature (Tg), a high conversion vitrification temperature (Tg/Tm), and excellent magnetization and corrosion resistance.
[Solution] An Fe-based amorphous alloy of the present invention has a composition formula represented by Fe 100-a-b-c-x-y-z-t Ni a Sn b Cr c P x C y B z Si t , and in the formula, 0 at%≤a≤10 at%, 0 at %≤b≤3 at%, 0 at%≤c≤6 at%, 6.8 at%≤x≤10.8 at%, 2.2 at%≤y≤9.8 at%, 0 at%≤z≤4.2 at%, and 0 at%≤t≤3.9 at% hold. Accordingly, an Fe-based amorphous alloy used for a powder core and/or a coil encapsulated powder core having a low glass transition temperature (Tg), a high conversion vitrification temperature (Tg/Tm), and excellent magnetization and corrosion resistance can be manufactured.

摘要翻译： 本发明的课题的目的在于，提供一种用于压粉磁芯和/或具有，尤其是低玻璃化转变温度（Tg），高的玻璃化转化温度（Tg / TM的线圈包封粉磁芯的铁基非晶质合金 ），以及优异的磁化强度和耐腐蚀性。 本发明的Fe基[解决]的非晶合金具有0组成式的Fe 100-abcxyzt的Ni为代表的Sn的b的Cr中c p XÇY BŽ的Si，并且t在式中，在%‰¤A‰ ¤10原子％，0原子%‰¤B‰¤3原子％，0原子%‰¤c‰¤6原子％，6.8原子%‰¤x‰¤10.8原子％，2.2在%‰¤y‰¤9.8 在％，0在%‰¤z‰¤4.2在％和0在%‰¤t‰¤3.9在持有％。 因此，用于压粉磁芯和/或具有低玻璃化转变温度（Tg），高换算玻璃化温度（Tg / Tm）和优异的磁化强度和耐腐蚀性的线圈包封粉磁芯可以是Fe基非晶质合金 制造。

公开(公告)号：EP2741060B1

公开(公告)日：2016-11-02

申请号：EP12819943.7

申请日：2012-07-26

申请人： Alps Green Devices Co., Ltd.

发明人： HEBIGUCHI,Hiroyuki

IPC分类号： G01K7/42 ,  H01M10/48 ,  H01G11/00 ,  G01K13/00 ,  H01G11/18 ,  H01G11/84

CPC分类号： G01R31/3606 ,  G01K7/42 ,  G01K13/00 ,  H01G11/18 ,  H01G11/84 ,  H01M10/48 ,  H01M10/486 ,  Y02T10/7022