摘要:
A sensor for sensing an external magnetic field along a sensing direction comprises a sensor bridge. The sensor bridge has a first sensor leg that includes a first magnetoresistive sense element and a second sensor leg that includes a second magnetoresistive sense element. The first and second sense elements have respective first and second pinned layers having the same reference magnetization. The first and second sense elements have respective first and second sense layers, each self-biased to have a first sense magnetization. A permanent magnet layer is proximate the second sense element. In the absence of an external magnetic field, the permanent magnet layer magnetically biases the first sense magnetization of the second sense layer produce a second sense magnetization of the second sense layer that differs from the first sense magnetization, and the first sense layer of the first sense element retains the first sense magnetization.
摘要:
The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
摘要:
[Object] To provide a magnetic detection device that detects magnetic fields in X, Y, and Z directions by forming magnetoresistive elements on inclined side surfaces of recesses formed in a substrate. [Solution] A Z detection unit 10 includes magnetoresistive elements 40 (R1, R2, R3, and R4) provided on inclined side surfaces 13 and 14 of Z detection recesses 11A and 11B. An X detection unit 20 includes magnetoresistive elements 40 (R5, R6, R7, and R8) provided on inclined side surfaces 23 and 24 of X detection recesses 21A and 21B. A Y detection unit 30 includes magnetoresistive elements 40 (R9, R10, R11, and R12) provided on inclined side surfaces 33 and 34 of Y detection recesses 31A and 31B. Directions of fixed magnetization (P) of fixed magnetic layers included in the magnetoresistive elements 40 are set to directions shown by arrows with solid lines.
摘要:
Methods, systems and programing for substance detection with a magnetic sensor are presented. In one example, a magnetic sensor having one or more layers is formed on a base for sensing a magnetic field created by magnetic particles present in proximity to the magnetic sensor. A first end of each of a first set of strands is immobilized with respect to the magnetic sensor. A magnetic particle is attached to a second end of each of the first set of strands so that when a material containing a substance is in contact with the base, the substance causes at least some of the first set of strands to break resulting in that the magnetic particle attached to the second end of each of the at least some of the first set of strands is no longer in proximity to the magnetic sensor.
摘要:
According to the present invention, a spin valve structure (2), an electrical unit (4) that applies a current to the spin valve structure (2), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (2) are included, in which when a current-induced magnetic field is detected, a coercive force of a free layer (14) is configured to be larger than the current-induced magnetic field as a detection target, the electrical unit (4) allows magnetization directions of a pinned layer (12) and the free layer (14) to transit between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (2), and the resistance reading unit (5) is configured to detect a threshold value of the current or the current-induced magnetic field corresponding to transition by reading out the resistance value corresponding to the transition between the parallel state and the anti-parallel state.