摘要:
Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.
摘要:
A method for preparing tantalum oxide and/or niobium oxide, characterized in that it comprises adding a basic aqueous solution to an aqueous solution of tantalum fluoride salt and/or niobium fluoride salt, to form tantalum hydroxide and/or niobium hydroxide, and then firing said tantalum hydroxide and/or niobium hydroxide. The above method allows the preparation of the tantalum oxide and/or niobium oxide in the state of a needle crystal or columnar crystal, not of a spherical crystal or an assemblage form.
摘要:
The invention is directed to a carbon material dispersion, including: a fluorinated carbon material having a fluorinated surface formed by bringing a treatment gas with a fluorine concentration of 0.01 to 100 vol.-% into contact with a carbon material under conditions at 150 to 600 °C; and a dispersion medium in which the fluorinated carbon material is dispersed.
摘要:
An object of the invention is to provide a process for preparing a fluorine compound, which can easily provide the objective fluorine compound using an oxygen-containing compound as a raw material without forming water as impurities as a by-product. The process for preparing a fluorine compound according to the invention includes reacting an oxygen-containing compound, which is at least one kind selected from the group consisting of oxides, hydroxides, hydrates, carbonic acid compounds, hydrogencarbonic acid compounds, boric acid compounds, sulfuric acid compounds, sulfurous acid compounds, phosphorous acid compounds and phosphoric acid compounds of at least any one kind selected from the group consisting of metal elements, H, B, C, N, Si, P, S, As, Se, Te and halogens, at least with carbonyl fluoride to form at least a fluorine compound and carbon dioxide without forming water as a by-product.
摘要:
An object of the present invention is to provide a method of manufacturing phosphorus pentafluoride and hexafluorophosphate, that can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The present invention relates to a method of manufacturing phosphorus pentafluoride, wherein a raw material which comprises at least phosphorus atoms and fluorine atoms is brought into contact with a carrier gas, thereby a phosphorus pentafluoride is extracted and separated into the carrier gas. The present invention relates to a method of manufacturing hexafluorophosphate, comprising the step of: reacting fluoride with phosphorus pentafluoride obtained by the method of manufacturing phosphorus pentafluoride according to the following chemical reaction scheme, €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒsPF 5 + AF s †’ A(PF 6 ) s wherein s is in the range of 1 ‰¤ s ‰¤ 3, and A is at least one member selected from the group consisting of Li, Na, K, Rb, Cs, NH 4 , Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.