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21.发明授权
公开(公告)号：EP2880426B1
公开(公告)日：2020-05-27
申请号：EP13750857.8
申请日：2013-07-30
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公开(公告)号：EP2901496B1
公开(公告)日：2018-08-01
申请号：EP13779754.4
申请日：2013-09-27
申请人： Centre National de la Recherche Scientifique (C.N.R.S.) , Electricité de France (EDF) , Université Pierre et Marie Curie (Paris 6)
发明人： PELOUARD, Jean-Luc , GUILLEMOLES, Jean-François , PROISE, Florian , PAIRE, Myriam , LINCOT, Daniel
IPC分类号： H01L31/0352 , H01L31/055
CPC分类号： H01L31/02327 , H01L27/142 , H01L31/0203 , H01L31/035209 , H01L31/0475 , H01L31/055 , H01L31/108 , H01L31/186 , Y02E10/52
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23.发明公开PROCÉDÉ D'ANALYSE DE LA STRUCTURE CRISTALLINE D'UN MATÉRIAU SEMI-CONDUCTEUR POLY-CRISTALLIN 审中-公开METHODS FOR晶体结构的多晶半导体的分析
公开(公告)号：EP2880426A1
公开(公告)日：2015-06-10
申请号：EP13750857.8
申请日：2013-07-30
IPC分类号： G01N21/95
摘要： A method for analysing the crystal structure of a polycrystalline semiconductor is described. According to one embodiment, it comprises exciting the semiconductor so as to make it emit a light signal at each point of a mesh in a preset spatial zone of the semiconductor; detecting the light signal as a function of variable polarisation angle, in a frequency band the width of which is larger than or equal to the width of the bandgap of the semiconductor; estimating, at each point of the mesh in the preset spatial zone of the semiconductor, a datum characterising the modulation of the light signal, which modulation is modelled by a sum of sinusoids, as a function of polarisation angle, on the basis of the signal detected for said point of the mesh; and displaying the characterising datum on all the points of the mesh in the preset spatial zone.
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24.发明公开PROCEDE DE FABRICATION DE SEMI-CONDUCTEURS EN COUCHES MINCES A BASE DE COMPOSES I-III-VI sb 2 /sb , POUR APPLICATIONS PHOTOVOLTAIQUES 有权用于生产薄膜半导体基于I-III-VI（2）的化合物，用于光伏应用
公开(公告)号：EP1500146A1
公开(公告)日：2005-01-26
申请号：EP03747464.0
申请日：2003-04-23
发明人： TAUNIER, Stéphane , KERREC, Olivier , MAHE, Michel , GUIMARD, Denis , BEN-FARAH, Mo[z , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre, Philippe , COWACHE, Pierre , VEDEL, Jacques
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
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