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50 条记录 (耗时 0.029 秒)

    Method of preparing metal oxide crystal
    22.
    发明公开
    Method of preparing metal oxide crystal 失效
    Verfahren zur Herstellung eines Metalloxid-Kristalls。

    公开(公告)号：EP0624664A3

    公开(公告)日：1995-11-15

    申请号：EP94303318.3

    申请日：1994-05-09

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  MITSUBISHI CABLE INDUSTRIES, Ltd.

    发明人： Yamada, Yasuji ,  Tagami, Minoru ,  Nakamura, Masaru ,  Shiohara, Yuh ,  Tanaka, Shoji

    IPC分类号： C30B29/22

    CPC分类号： C30B29/225 ,  C30B15/32 ,  Y10S505/729

    摘要： A method of preparing a crystal of a Y-series 123 metal oxide is disclosed, in which a substrate is immersed in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the substrate contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the substrate and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the substrate as primary crystals.

    摘要翻译： 公开了一种制备Y系123金属氧化物的晶体的方法，其中将基片浸入包括构成金属氧化物的组分的液相中。 液相包含位于不同于基板与液相接触的位置的位置的固相。 固相为构成Y系123金属氧化物的溶质提供液相，使得溶质被输送到基板和液相接触的位置，从而允许Y系列123金属氧化物在 底物作为主晶体。

    Josephson device
    24.
    发明公开
    Josephson device 失效
    约瑟夫森-Anordnung

    公开(公告)号：EP0756335A1

    公开(公告)日：1997-01-29

    申请号：EP96305357.4

    申请日：1996-07-22

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Konishi, Masaya ,  Matsunaga, Yoshinori ,  Enomoto, Youichi ,  Tanaka, Shoji

    IPC分类号： H01L39/22

    CPC分类号： H01L39/225

    摘要： A crystal grain boundary is produced by growing a single crystal YBa 2 Cu 3 O 7-x thin film (2) having a c-axis parallel to the surface on a single crystal YBa 2 Cu 3 O 7-x (001) substrate (1) having a c-axis vertical to the surface by a magnetron sputtering method at a substrate temperature between 500°C and 680°C. The difference of the orientations makes a grain boundary at the interface without interposition of any other material than YBa 2 Cu 3 O 7-x . The grain boundary is utilized as a Josephson junction.

    摘要翻译： 通过在具有垂直于c轴的单轴YBa2Cu3O7-x（001）衬底（1）上生长具有平行于表面的c轴的单晶YBa2Cu3O7-x薄膜（2）来产生晶界边界。 通过磁控溅射法在基板温度在500℃至680℃之间的表面。取向的差异使得界面处的晶界没有插入比YBa2Cu3O7-x的任何其它材料。 晶界用作约瑟夫逊结。

    Thallium group superconducting wire
    25.
    发明公开
    Thallium group superconducting wire 失效
    Supraleitender Draht der Thallium-Gruppe

    公开(公告)号：EP0718897A1

    公开(公告)日：1996-06-26

    申请号：EP95119551.0

    申请日：1995-12-12

    申请人： HITACHI, LTD. ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Nabatame, Toshihide ,  Kawashima, Junichi ,  Hirabayashi, Izumi ,  Shiobara, Shoji ,  Tanaka, Shoji

    IPC分类号： H01L39/14 ,  H01L39/24

    CPC分类号： H01L39/143 ,  H01L39/2425 ,  H01L39/2458 ,  Y10S428/93 ,  Y10S505/704 ,  Y10S505/705 ,  Y10T428/2929

    摘要： In order to provide a crystal oriented high quality thallium group superconducting wire having a high critical current density, a thallium group superconducting film (2) is formed on an oxide single crystal fiber (1) having plane facets (3) and a polygonal cross section in the thallium group superconducting wire, wherein the c-axis of the thallium group superconducting film (2) is oriented perpendicularily, and a- and b-axis are oriented in parallel to the longitudinal direction of the above fiber (1),respectively, and resulting to obtain a high quality thallium group superconducting wire with Jc of 10⁵A/cm² or more at 77K.

    摘要翻译： 为了提供具有高临界电流密度的晶体取向的高质量铊组超导线，在具有平面（3）和多边形横截面的氧化物单晶纤维（1）上形成铊基超导膜（2） 在铊族超导线中，其中铊族超导膜（2）的c轴垂直取向，并且a轴和b轴分别与上述纤维（1）的纵向平行取向， 从而得到77K的Jc为10 5 A / cm 2以上的高品质铊族超导线。

    Apparatus for producing superconducting oxide film by MOCVD process
    29.
    发明公开
    Apparatus for producing superconducting oxide film by MOCVD process 失效
    Vorrichtung zur Herstellung von supraleitenden Oxydschichten durch MOCVD-Verfahren。

    公开(公告)号：EP0506012A1

    公开(公告)日：1992-09-30

    申请号：EP92105135.5

    申请日：1992-03-25

    申请人： HITACHI, LTD. ,  NGK SPARK PLUG CO., LTD ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Higashiyama, Kazutoshi ,  Ushida, Takahisa ,  Hirabayashi, Izumi ,  Tanaka, Shoji

    IPC分类号： C23C16/52 ,  H01L39/24

    CPC分类号： C23C16/45561 ,  C23C16/408 ,  C23C16/448 ,  C23C16/52 ,  Y10S505/73 ,  Y10S505/734 ,  Y10S505/786

    摘要： An apparatus for producing a superconducting oxide film with stable properties by a chemical vapor phase growth process, suitable for mass production, is provided with a gas analyzer comprising a differential pressure meter (38) between a raw material gas collector tube (35) provided in a transfer line (8) for leading a raw material gas to a film forming chamber and a bypass line (37), a dilution gas line (49) interlocked with the differential pressure meter (38) and for leading a dilution gas to the raw material gas collector tube (35), a gas separation column (42) branched from the bypass line, a gas detector (31) connected to the gas separation column (42), flow rate controllers (50) for carrier gases (43) and (44) and a thermostat (13) for heating all the lines. Amounts of raw materials gases can be readily measured and controlled and thus superconducting oxide films of stable properties in a constant metal composition ratio can be continuously produced, and thus the present apparatus is suitable for mass production of tape form, superconducting materials.

    摘要翻译： 本发明提供一种气体分析装置，其特征在于，包括在位于所述原料气体收集管（35）之间的差压计（38）的气体分析装置 用于将原料气体引导到成膜室和旁通管线（37）的输送管线（8），与差压计（38）互锁的稀释气体管线（49），并将稀释气体引导到原料 原料气体收集管（35），从旁路管路分支的气体分离塔（42），连接到气体分离塔（42）的气体检测器（31），用于载气（43）的流量控制器（50） （44）和用于加热所有管线的恒温器（13）。 可以容易地测量和控制原料气体的量，因此可以连续生产具有恒定金属组成比的稳定性能的超导氧化物膜，因此本发明的装置适用于大规模生产带状超导材料。