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48 条记录 (耗时 0.019 秒)

    Apparatus for producing superconducting oxide film by MOCVD process
    2.
    发明公开
    Apparatus for producing superconducting oxide film by MOCVD process 失效
    Vorrichtung zur Herstellung von supraleitenden Oxydschichten durch MOCVD-Verfahren。

    公开(公告)号：EP0506012A1

    公开(公告)日：1992-09-30

    申请号：EP92105135.5

    申请日：1992-03-25

    申请人： HITACHI, LTD. ,  NGK SPARK PLUG CO., LTD ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Higashiyama, Kazutoshi ,  Ushida, Takahisa ,  Hirabayashi, Izumi ,  Tanaka, Shoji

    IPC分类号： C23C16/52 ,  H01L39/24

    CPC分类号： C23C16/45561 ,  C23C16/408 ,  C23C16/448 ,  C23C16/52 ,  Y10S505/73 ,  Y10S505/734 ,  Y10S505/786

    摘要： An apparatus for producing a superconducting oxide film with stable properties by a chemical vapor phase growth process, suitable for mass production, is provided with a gas analyzer comprising a differential pressure meter (38) between a raw material gas collector tube (35) provided in a transfer line (8) for leading a raw material gas to a film forming chamber and a bypass line (37), a dilution gas line (49) interlocked with the differential pressure meter (38) and for leading a dilution gas to the raw material gas collector tube (35), a gas separation column (42) branched from the bypass line, a gas detector (31) connected to the gas separation column (42), flow rate controllers (50) for carrier gases (43) and (44) and a thermostat (13) for heating all the lines. Amounts of raw materials gases can be readily measured and controlled and thus superconducting oxide films of stable properties in a constant metal composition ratio can be continuously produced, and thus the present apparatus is suitable for mass production of tape form, superconducting materials.

    摘要翻译： 本发明提供一种气体分析装置，其特征在于，包括在位于所述原料气体收集管（35）之间的差压计（38）的气体分析装置 用于将原料气体引导到成膜室和旁通管线（37）的输送管线（8），与差压计（38）互锁的稀释气体管线（49），并将稀释气体引导到原料 原料气体收集管（35），从旁路管路分支的气体分离塔（42），连接到气体分离塔（42）的气体检测器（31），用于载气（43）的流量控制器（50） （44）和用于加热所有管线的恒温器（13）。 可以容易地测量和控制原料气体的量，因此可以连续生产具有恒定金属组成比的稳定性能的超导氧化物膜，因此本发明的装置适用于大规模生产带状超导材料。

    Thallium group superconducting wire
    3.
    发明公开
    Thallium group superconducting wire 失效
    Supraleitender Draht der Thallium-Gruppe

    公开(公告)号：EP0718897A1

    公开(公告)日：1996-06-26

    申请号：EP95119551.0

    申请日：1995-12-12

    申请人： HITACHI, LTD. ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Nabatame, Toshihide ,  Kawashima, Junichi ,  Hirabayashi, Izumi ,  Shiobara, Shoji ,  Tanaka, Shoji

    IPC分类号： H01L39/14 ,  H01L39/24

    CPC分类号： H01L39/143 ,  H01L39/2425 ,  H01L39/2458 ,  Y10S428/93 ,  Y10S505/704 ,  Y10S505/705 ,  Y10T428/2929

    摘要： In order to provide a crystal oriented high quality thallium group superconducting wire having a high critical current density, a thallium group superconducting film (2) is formed on an oxide single crystal fiber (1) having plane facets (3) and a polygonal cross section in the thallium group superconducting wire, wherein the c-axis of the thallium group superconducting film (2) is oriented perpendicularily, and a- and b-axis are oriented in parallel to the longitudinal direction of the above fiber (1),respectively, and resulting to obtain a high quality thallium group superconducting wire with Jc of 10⁵A/cm² or more at 77K.

    摘要翻译： 为了提供具有高临界电流密度的晶体取向的高质量铊组超导线，在具有平面（3）和多边形横截面的氧化物单晶纤维（1）上形成铊基超导膜（2） 在铊族超导线中，其中铊族超导膜（2）的c轴垂直取向，并且a轴和b轴分别与上述纤维（1）的纵向平行取向， 从而得到77K的Jc为10 5 A / cm 2以上的高品质铊族超导线。

    Method and apparatus for monitoring oxide superconducting film
    4.
    发明公开
    Method and apparatus for monitoring oxide superconducting film 失效
    Verfahren und Apparat zurÜberwachungoxidisch supraleitender Schichten。

    公开(公告)号：EP0545302A1

    公开(公告)日：1993-06-09

    申请号：EP92120284.2

    申请日：1992-11-27

    申请人： HITACHI, LTD. ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Higashiyama, Kazutoshi ,  Hirabayashi, Izumi ,  Morishita, Tadataka ,  Tanaka, Shoji

    IPC分类号： H01L39/24 ,  F02M67/12 ,  F02M51/06

    CPC分类号： H01L39/2422

    摘要： In formation of an oxide superconducting film on various substrates by chemical vapor deposition (CVD), a film-growing process is monitored in situ by irradiating the growing oxide superconducting thin film surface on a substrate (5) alternately with s-polarized laser beam (28) and p-polarized laser beam (28) at the Brewster angle of the substrate (5) or film to measure the intensity of reflected laser beams. Thickness, growth rate and flatness or smoothness of a growing film can be monitored on the basis of measured intensity, whereby a flat and smooth, and uniform oxide superconducting thin film can be formed effectively with respect to the operation and economy.

    摘要翻译： 在通过化学气相沉积（CVD）在各种衬底上形成氧化物超导膜时，通过与s偏振激光束交替地照射衬底（5）上生长的氧化物超导薄膜表面来现场监测膜生长过程 28）和p偏振激光束（28）以基板（5）或膜的布鲁斯特角测量反射激光束的强度。 可以基于测量的强度来监测生长膜的厚度，生长速率和平坦度或平滑度，由此可以有效地形成平坦且平滑且均匀的氧化物超导薄膜。

    Method of preparing metal oxide crystal
    10.
    发明公开
    Method of preparing metal oxide crystal 失效
    Verfahren zur Herstellung eines Metalloxid-Kristalls。

    公开(公告)号：EP0624664A3

    公开(公告)日：1995-11-15

    申请号：EP94303318.3

    申请日：1994-05-09

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  MITSUBISHI CABLE INDUSTRIES, Ltd.

    发明人： Yamada, Yasuji ,  Tagami, Minoru ,  Nakamura, Masaru ,  Shiohara, Yuh ,  Tanaka, Shoji

    IPC分类号： C30B29/22

    CPC分类号： C30B29/225 ,  C30B15/32 ,  Y10S505/729

    摘要： A method of preparing a crystal of a Y-series 123 metal oxide is disclosed, in which a substrate is immersed in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the substrate contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the substrate and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the substrate as primary crystals.

    摘要翻译： 公开了一种制备Y系123金属氧化物的晶体的方法，其中将基片浸入包括构成金属氧化物的组分的液相中。 液相包含位于不同于基板与液相接触的位置的位置的固相。 固相为构成Y系123金属氧化物的溶质提供液相，使得溶质被输送到基板和液相接触的位置，从而允许Y系列123金属氧化物在 底物作为主晶体。