公开(公告)号：EP1748557A2

公开(公告)日：2007-01-31

申请号：EP06012762.8

申请日：2006-06-21

申请人： Samsung Electronics Co., Ltd.

发明人： Nam, Kuang-woo ,  Sunwoo, Kook-hyun ,  Song, In-sang ,  Kwon, Sang-wook ,  Kim, Duck-hwan ,  Kim, Chul-soo ,  Sul, Sang-chul ,  Park, Yun-kwon ,  Park, Hae-seok ,  Shin, Jea-shik ,  Shim, Dong-ha ,  Hong, Young-tack ,  Kim, Jong-seok ,  Chang, Seok-mo ,  Yun, Seok-chul

IPC分类号： H03H9/58 ,  H03H3/02

CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

摘要翻译： 集成滤波器包括薄膜体声谐振器（FBAR）和表面声波（SAW）谐振器和制造该集成滤波器的方法。 该集成滤波器包括：衬底（110）; 在预定的第一电极（120）定位在所述基板的上表面的第一区域; 定位在所述第一电极上的第一压电体层（130）; 定位在所述第一压电层上的第二电极（150）; 在上基底的上表面的预定第二区域设置的第二压电体层（140）; 和至少一个叉指式换能器（IDT）电极（160,170）定位在所述第二压电体层上。 IDT电极包括：在所述第二压电体层上的梳状结构形成的第一IDT电极（160）; 和在梳状结构形成的第二压电层上的第二IDT电极（170），以便与所述第一IDT电极啮合。 所述第一和第二压电层中形成的相同材料构成。 因此，为了集成滤波器在各频段其操作变得紧凑。

公开(公告)号：EP1484618A3

公开(公告)日：2006-01-18

申请号：EP04253293.7

申请日：2004-06-03

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Na, Kyung-won ,  Park, Hae-seok ,  Choi, Sang-on ,  Shim, Dong-sik

IPC分类号： G01R33/09

CPC分类号： G01R33/05

摘要： A micro-machining method of manufacturing a micro fluxgate sensor manufactured having an amorphous magnetic core (1,2) includes forming lower coils of an excitation coil (3) and a magnetic field detecting coil (4) on a wafer, depositing a first insulating layer on the lower coils and forming an amorphous magnetic core, depositing a second insulating layer on the amorphous magnetic core and forming upper coils connected to the lower coils to complete the excitation coil and the magnetic field detecting coil, and covering the excitation coil and the magnetic field detecting coil with a protective film, and etching the protective film to expose a portion of the excitation coil and magnetic field detecting coil, thereby forming a pad.

公开(公告)号：EP1467216A2

公开(公告)日：2004-10-13

申请号：EP04251015.6

申请日：2004-02-24

申请人： Samsung Electronics Co., Ltd.

发明人： Shim, Dong-sik ,  Choi, Sang-on ,  Na, Kyung-won ,  Park, Hae-seok ,  Hwang, Jun-sik

IPC分类号： G01R33/028 ,  G01R33/05 ,  H01F41/14 ,  H01F41/34 ,  H01F41/32 ,  H01F41/30

CPC分类号： G01R33/02 ,  G01R33/04 ,  G01R33/05 ,  H01F17/0006 ,  H01F41/046

摘要： Disclosed is a method for manufacturing a magnetic field detecting element, capable of simplifying the manufacturing process and providing a thin-type magnetic field detecting element. The disclosed method for manufacturing a magnetic field detecting element according to the present invention, is characterized in forming a seed film on the semiconductor substrate, then partially removing the seed film using a predetermined pattern in advance, for insulation of a plurality of coil lines that would be formed on the seed film, forming a soft magnetic core, and cutting off edges of the semiconductor substrate so that a plurality of the coil lines may be insulated.

摘要翻译： 公开了一种能够简化制造工艺并提供薄型磁场检测元件的磁场检测元件的制造方法。 所公开的根据本发明的磁场检测元件的制造方法的特征在于在半导体衬底上形成种子膜，然后预先使用预定图案部分地去除晶种膜，以绝缘多条线圈线 将形成在种子膜上，形成软磁芯，并且切断半导体衬底的边缘，使得多个线圈线可以被绝缘。

公开(公告)号：EP1441234A2

公开(公告)日：2004-07-28

申请号：EP04250334.2

申请日：2004-01-22

申请人： Samsung Electronics Co., Ltd.

发明人： Park, Hae-seok ,  Choi, Sang-on ,  Shim, Dong-sik ,  Na, Kyung-won

IPC分类号： G01R33/04

CPC分类号： G01R33/04 ,  G01R15/185 ,  G01R33/05

摘要： A fluxgate sensor is integrated in a semiconductor substrate. The fluxgate sensor has two bar type soft magnetic cores, or a rectangular-ring type soft magnetic core to form a closed magnetic path on the semiconductor substrate, with an excitation coil formed of a metal layer either of the united structure winding the two bar-type cores or two longer sides of the rectangular-ring type core altogether and substantially in a figure of 8 pattern, or of a separated structure winding the two bar type cores or two longer sides of the rectangular-ring type core in series. Also, a pick-up coil is formed on the two bar-type cores or two longer sides of the rectangular-ring type core, either of the united structure winding the two bar-type cores or two longer sides of the rectangular-type core altogether in a solenoid pattern, or of the separated structure winding the two bar type cores or two longer sides of the rectangular-ring type core in series in a solenoid.

摘要翻译： 磁通门传感器集成在半导体衬底中。 磁通门传感器具有两个棒式软磁芯或矩形环型软磁芯，以在半导体衬底上形成封闭的磁路，由励磁线圈形成的金属层组合， 类型的芯或矩形环型芯的两个长边基本上以8图案的形式，或分离的结构将矩形环型芯的两个棒状芯或两个长边串联。 此外，在矩形环型芯的两个棒状芯或两个长边上形成一个拾取线圈，其中两个棒型芯的两个长边或矩形芯的两个长边 或者分离结构将矩形环型铁心的两个杆型铁心或两个较长的侧面串联在螺线管中。