公开(公告)号：EP1289876A1

公开(公告)日：2003-03-12

申请号：EP01951392.8

申请日：2001-06-13

Applicant: Amtec GmbH

Inventor： BERTZ, Andreas ,  GESSNER, Thomas ,  KÜCHLER, Matthias ,  KNÖFLER, Roman

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0086 ,  B81B2203/033 ,  B81C2201/016

Abstract: The invention relates to a single crystal doped silicon microstructure comprising at least one functional element (2.1, 2.2) and placed in a substrate (1). Also disclosed is the method for producing said microstructure. According to the invention, the functional element (2.1, 2.2) is mechanically and electrically separated from the substrate on all sides by means of insulating gaps (5, 5a), and is connected in at least one position to a first structure (4a) of an electrically conductive layer (S) which is electrically insulated from the substrate (1) by means of an insulating layer (3). The functional element is thereby fixed in position in relation to the substrate (1) by means of said electrically conductive layer. The functional element is extracted from the substrate in such a way that the isolation gaps are present on all sides in relation to the substrate (1). The electrically conductive layer (S) is applied in such a way that it is connected to the functional element by means of contact fingers, fixing the functional element firmly in position.