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    Method of micromachining a multi-part cavity
    2.
    发明公开
    Method of micromachining a multi-part cavity 审中-公开
    Verfahren zur Mikrobearbeitung einerKörperhölungmit mehrfachem Profil

    公开(公告)号：EP1077475A2

    公开(公告)日：2001-02-21

    申请号：EP00117155.2

    申请日：2000-08-10

    Applicant: Applied Materials, Inc.

    Inventor： Podlesnik, Dragan V. ,  Chinn, Jeffrey D. ,  Lill, Thorsten B. ,  Pan, Shaoher X. ,  Khan, Anisul ,  Wang, Joan Yiqiong ,  Li, Maocheng

    IPC: H01L21/3065 ,  B81C1/00

    CPC classification number: H01L27/1087 ,  B81B2201/052 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00119 ,  B81C2201/016 ,  H01L21/3065 ,  H01L21/3086

    Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes. The method is also useful whenever it is necessary to maintain tight control over the dimensions of the shaped opening.

    Abstract translation: 本公开涉及我们发现用于蚀刻衬底中的多部分空腔的特别有效的方法。 该方法提供了首先蚀刻成形开口，在成形开口的内表面的至少一部分上沉积保护层，然后直接在成形开口下方蚀刻成形腔，并且与成形开口连续连通。 保护层在蚀刻成形腔体期间保护成形开口的蚀刻轮廓，从而如果需要，可以将成形的开口和成形的腔体进行蚀刻以具有不同的形状。 在本发明方法的特定实施例中，横向蚀刻阻挡层和/或注入的蚀刻停止点也用于引导蚀刻工艺。 本发明的方法可以应用于需要或希望提供具有不同形状的成形开口和下面的成形腔的任何应用。 只要需要对成形开口的尺寸进行严格控制，该方法也是有用的。

    SCHICHTSYSTEM MIT EINER SILIZIUMSCHICHT UND EINER PASSIVIERSCHICHT, VERFAHREN ZUR ERZEUGUNG EINER PASSIVIERSCHICHT AUF EINER SILIZIUMSCHICHT UND DEREN VERWENDUNG
    4.
    发明公开
    SCHICHTSYSTEM MIT EINER SILIZIUMSCHICHT UND EINER PASSIVIERSCHICHT, VERFAHREN ZUR ERZEUGUNG EINER PASSIVIERSCHICHT AUF EINER SILIZIUMSCHICHT UND DEREN VERWENDUNG 有权
    具有产生钝化层上的硅层及其用途的硅层和钝化层，工艺层SYSTEM

    公开(公告)号：EP1527011A2

    公开(公告)日：2005-05-04

    申请号：EP03735274.7

    申请日：2003-05-06

    Applicant: ROBERT BOSCH GMBH

    Inventor： URBAN, Andrea ,  LAERMER, Franz ,  BREITSCHWERDT, Klaus

    IPC: B81C1/00

    CPC classification number: B81C1/00571 ,  B81B2203/033 ,  B81C2201/016 ,  H01L21/0332

    Abstract: A layer system with a silicon layer (11) is disclosed, on which a surface passivation layer (17) is at least partly applied. The passivation layer (17) comprises a first at least extensively inorganic partial layer (14) and a second at least extensively polymeric partial layer (15). A method for production of a passivation layer (17) on a silicon layer (11) is also disclosed, whereby a first inorganic partial layer (14) is applied to the silicon layer (11), an intermediate layer applied to the above and on the intermediate layer a second polymeric partial layer (15) is applied to form the passivation layer (17). The production of the intermediate layer is achieved, whereby in the surface region thereof adjacent to the first partial layer (14), the composition thereof is the same as the first partial layer (14) and in the surface region thereof adjacent to the second partial layer (15) the composition thereof is the same as the second partial layer (15) and that the composition of the intermediate layer varies continuously or stepwise from the composition corresponding to the first partial layer to the composition corresponding to the second partial layer. The disclosed layer system or the disclosed method are particularly suitable for the production of self-supporting structures in silicon.

    INTEGRATED CAPACITIVE HUMIDITY SENSOR
    5.
    发明公开
    INTEGRATED CAPACITIVE HUMIDITY SENSOR 审中-公开
    集成电容式湿度传感器

    公开(公告)号：EP3211409A1

    公开(公告)日：2017-08-30

    申请号：EP17154932.2

    申请日：2017-02-07

    Applicant: NXP USA, Inc.

    Inventor： ZHANG, Qing ,  CHOUDHURI, Mohommad Mahbub ,  ZEB, Gui

    IPC: G01N27/22

    CPC classification number: B81B7/008 ,  B81B2201/0214 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0159 ,  B81C2201/016 ,  B81C2201/019 ,  G01N27/223

    Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.

    Abstract translation: 一种由电容式湿度传感器构成的半导体器件，该电容式湿度传感器包括电接枝到位于CMOS衬底或组合的MEMS和CMOS衬底上的导电金属层并且通过钝化层暴露于开口内的湿敏聚合物层， 封装的器件以及在半导体器件内形成电容式湿度传感器的方法。

    Piezoresistive sensing structure
    7.
    发明公开
    Piezoresistive sensing structure 有权
    压阻传感器

    公开(公告)号：EP1721865A2

    公开(公告)日：2006-11-15

    申请号：EP06075963.6

    申请日：2006-04-28

    Applicant: Delphi Technologies, Inc.

    Inventor： Rich, David B. ,  Crist, Steven M.

    IPC: B81B3/00

    CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

    Abstract: A technique for manufacturing a piezoresistive sensing structure (170) includes a number of process steps. Initially, a piezoresistive element (108) is implanted into a first side of an assembly (102,106,104A) that includes a semiconductor material (102,104A). A passivation layer (110A) is then formed on the first side of the assembly (102,106,104A) over the element (108). The passivation layer (110A) is then removed from selected areas on the first side of the assembly (102,106,104A). A first mask is then provided on the passivation layer (110A) in a desired pattern. A beam (152), which includes the element (108), is then formed in the assembly over at least a portion of the assembly (102,106,104A) that is to provide a cavity (103). The passivation layer (110A) provides a second mask, in the formation of the beam (152), that determines a width of the formed beam (152).

    Abstract translation: 制造压阻感测结构（170）的技术包括多个工艺步骤。 最初，将压阻元件（108）注入包括半导体材料（102,104A）的组件（102,106,104A）的第一侧。 然后在元件（108）上方的组件（102,106,104A）的第一侧上形成钝化层（110A）。 然后从组件（102,106,104A）的第一侧上的选定区域去除钝化层（110A）。 然后以期望的图案在钝化层（110A）上提供第一掩模。 然后，包括元件（108）的梁（152）在组件中形成在组件（102,106,104A）的至少一部分上，以提供空腔（103）。 钝化层（110A）在确定所形成的光束（152）的宽度的波束（152）的形成中提供第二掩模。

    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE
    10.
    发明公开
    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE 审中-公开
    Anzeigevorrichtung und Verfahren zur Herstellung der Anzeigevorrichtung

    公开(公告)号：EP2538265A1

    公开(公告)日：2012-12-26

    申请号：EP12172598.0

    申请日：2012-06-19

    Applicant: Hitachi Displays, Ltd. ,  Pixtronix, Inc.

    Inventor： Kaitoh, Takuo ,  Kuriyagawa, Takeshi ,  Sakata, Ryou ,  Karikome, Osamu ,  Brosnihan, Timothy J.

    IPC: G02B26/08 ,  B81B3/00

    CPC classification number: G02B26/0841 ,  B81B7/007 ,  B81B2201/045 ,  B81C2201/0132 ,  B81C2201/016

    Abstract: The MEMS shutter (210) includes a shutter (210) having an aperture part (213, 214), a first spring connected to the shutter (210), a first anchor (232, 234, 238, 240) connected to the first spring (216, 218, 220, 222), a second spring (224, 226, 228, 230) and a second anchor (236, 242) connected to the second spring (224, 226, 228, 230), an insulation film (210c) on a surface of the shutter (210), the first spring (216, 218, 220, 222), the second spring (224, 226, 228, 230), the first anchor (232, 234, 238, 240) and the second anchor (236, 242), the surfaces being in a perpendicular direction to a surface of a substrate (102), and the insulation film (210c) is not present on a surface of the plurality of terminals (104), and a surface of the shutter (210), the first spring (216, 218, 220, 222), the second spring (224, 226, 228, 230), the first anchor (232, 234, 238, 240) and the second anchor (236, 242), the surfaces being in a parallel direction to a surface of the substrate (102) and on the opposite side of the side facing the substrate (102).

    Abstract translation: MEMS快门（210）包括具有开口部分（213,214）的快门（210），连接到活门（210）的第一弹簧，连接到第一弹簧的第一锚定件（232,234,238,240） （216,218,220,222），第二弹簧（224,226,228,230）和连接到第二弹簧（224,226,228,230）的第二锚固件（236,242），绝缘膜（ 所述第一弹簧（216,218,220,222），所述第二弹簧（224,226,228,230），所述第一锚定件（232,234,238,240） 和所述第二锚定部（236,242），所述表面与基板（102）的表面垂直，所述绝缘膜（210c）不存在于所述多个端子（104）的表面，并且 所述挡板（210）的表面，所述第一弹簧（216,218,220,222），所述第二弹簧（224,226,228,230），所述第一锚定件（232,234,238,240）和所述第二弹簧 锚固件（236,242），所述表面处于与所述基板（102）的表面平行的方向上 在面向衬底（102）的一侧的相对侧。

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